Electronics-Component Parts and Materials(Date:2021/11/25)

Presentation
Indium Composition Dependence of Internal Quantum Efficiency in InGaN Quantum-Wells Measured by Simultaneous Microscopic Photoacoustic and Photoluminescence Spectroscopy

Keito Mori(Kanazawa Inst. of Tech.),  Yuchi Takahashi(Kanazawa Inst. of Tech.),  Yuya Morimoto(Kanazawa Inst. of Tech.),  Atsushi A. Yamaguchi(Kanazawa Inst. of Tech.),  

[Date]2021-11-25
[Paper #]ED2021-20,CPM2021-54,LQE2021-32
Waveguide loss measurements in III-nitride laser structures

Kenta Ogasawara(KIT),  Shigeta Sakai(Ushio Inc),  Tadashi Okumura(Ushio Inc),  Koichi Naniwae(Ushio Inc),  Atsushi A. Yamaguchi(KIT),  

[Date]2021-11-25
[Paper #]ED2021-21,CPM2021-55,LQE2021-33
Photoluminescence study of high-purity GaN homoepitaxial layers grown by hydride vapor phase epitaxy

Hiroto Imashiro(KIT),  Ryo Yamahida(KIT),  Hironao Kanamori(KIT),  Ryuichi Watanabe(KIT),  Takeshi Kimura(SCIOCS),  Taichiro Konno(SCIOCS),  Hajime Fujikura(SCIOCS),  Atsushi A. Yamaguchi(KIT),  

[Date]2021-11-25
[Paper #]ED2021-22,CPM2021-56,LQE2021-34
Theoretical modeling of temperature-dependent PL spectra in InGaN quantum wells

Shunya Hakamata(KIT),  Takashi Fujita(KIT),  Ryuichi Watanabe(KIT),  Atsushi A Yamaguchi(KIT),  

[Date]2021-11-25
[Paper #]ED2021-23,CPM2021-57,LQE2021-35
[Encouragement Talk] Optimization of buried growth and optical properties for nanowire-based light emitter

Yoshiya Miyamoto(Meijo Univ.),  Naoki Sone(Meijo Univ.),  Renji Okuda(Meijo Univ.),  Weifang Lu(Meijo Univ.),  Kazuma Ito(Meijo Univ.),  Shiori Yamamura(Meijo Univ.),  Yukimi Jinno(Meijo Univ.),  Nanami Nakayama(Meijo Univ.),  Sae Katsuro(Meijo Univ.),  Satoshi Kamiyama(Meijo Univ.),  Tetsuya Takeuchi(Meijo Univ.),  Motoaki Iwaya(Meijo Univ.),  

[Date]2021-11-25
[Paper #]ED2021-19,CPM2021-53,LQE2021-31
Chemical Bath Deposition of Cu2O films on ITO/glass substrates

Taishu kamimoto(Ehime Univ.),  Takuma Ohmoto(Ehime Univ.),  Tomoaki Terasako(Ehime Univ.),  

[Date]2021-11-25
[Paper #]ED2021-15,CPM2021-49,LQE2021-27
Optical characterization of c-plane Al0.83In0.17N/GaN lattice-matched heterostructures

Liyang Li(Tohoku Univ.),  Kohei Shima(Tohoku Univ.),  Mizuki Yamanaka(Nagoya Inst. Tech.),  Kazunobu Kojima(Tohoku Univ.),  Takashi Egawa(Nagoya Inst. Tech.),  Akira Uedono(Univ. of Tsukuba),  Ishibashi Shoji(AIST),  Tetsuya Takeuchi(Meijo Univ.),  Makoto Miyoshi(Nagoya Inst. Tech.),  Shigefusa Chichibu(Tohoku Univ.),  

[Date]2021-11-25
[Paper #]ED2021-24,CPM2021-58,LQE2021-36
Vapor-Liquid-Solid Growth of ZnGa2O4 Nanostructures and Their Structural and Photoluminescence Properties

Tomoaki Terasako(Ehime Univ.),  Takeshi Yoneda(Ehime Univ.),  Naohiro Takahashi(Natl. INst. Technol., Kagawa Coll.),  Masakazu Yagi(Natl. INst. Technol., Kagawa Coll.),  

[Date]2021-11-25
[Paper #]ED2021-16,CPM2021-50,LQE2021-28
Investigation of defects suppression in Cu halide thin films by emission spectroscopy

Chikashi Fujishima(Nagaoka Univ Tech),  Kunihiko Tanaka(Nagaoka Univ Tech),  Kaito Watanabe(Nagaoka Univ Tech),  Naoya Tujimoto(Nagaoka Univ Tech),  

[Date]2021-11-25
[Paper #]ED2021-17,CPM2021-51,LQE2021-29
Substrate off-cut angle dependence on fabrication of high-temperature annealed a-plane AlN on r-plane sapphire

Kota Shibutani(Mie Univ.),  Kenjiro Uesugi(Mie Univ.),  Shiyu Xiao(Mie Univ.),  Kanako Shojiki(Mie Univ.),  Shigeyuki Kuboya(Mie Univ.),  Toru Akiyama(Mie Univ.),  Hideto Miyake(Mie Univ.),  

[Date]2021-11-25
[Paper #]ED2021-25,CPM2021-59,LQE2021-37
Growth of 220-nm-band-emission AlGaN Quantum Wells Using Annealed Sputtered AlN Template

Shoya Ishihara(Mie Univ.),  Shigeyuki Kuboya(Mie Univ.),  Kanako Shojiki(Mie Univ.),  Kenjiro Uesugi(Mie Univ.),  Xiao Shiyu(Mie Univ.),  Hideto Miyake(Mie Univ.),  

[Date]2021-11-25
[Paper #]ED2021-26,CPM2021-60,LQE2021-38
Evaluation of PV performance of GaInN besed photovoltaic cells under monochromatic light illumination for optical wireless power transmission system

Taiki Nakabayashi(NIT),  Kousuke Yamamoto(NIT),  Pradip Dalapati(NIT),  Takashi Egawa(NIT),  Makoto Miyoshi(NIT),  

[Date]2021-11-25
[Paper #]ED2021-27,CPM2021-61,LQE2021-39
Influence of Annealing on Ultraviolet Light Detecting Properties of PEDOT:PSS/ZnO Nanorods/ZnO:Ga Heterostructures

Kohei Kobayashi(Ehime Univ.),  Tomoaki Terasako(Ehime Univ.),  Masakazu Yagi(Natl. Inst. Technol., Kagawa Coll.),  Yutaka Furubayashi(Kochi Univ. Technol.),  Tetsuya Yamamoto(Kochi Univ. Technol.),  

[Date]2021-11-25
[Paper #]ED2021-18,CPM2021-52,LQE2021-30
Two-dimensional characterization of Au/Ni/n-GaN Schottky contacts with different surface treatments by scanning internal photoemission microscopy

Kenji Shiojima(Univ. of Fukui),  Ryo Tanaka(Fuji electric co.),  Shinya Takashima(Fuji electric co.),  Katsunori Ueno(Fuji electric co.),  Edo Masaharu(Fuji electric co.),  

[Date]2021-11-26
[Paper #]ED2021-28,CPM2021-62,LQE2021-40
Uniformity characterization of SiC, GaN, α-Ga?O? Schottky contacts using scanning internal photoemission microscopy

Yuto Kawasumi(Univ. of Fukui),  Fumimasa Horikiri(SCIOCS Co.),  Noboru Fukuhara(SCIOCS Co.),  Tomoyoshi Mishima(Hosei Univ.),  Takashi Shinohe(FLOSFIA INC.),  Kenji Shiojima(Univ. of Fukui),  

[Date]2021-11-26
[Paper #]ED2021-29,CPM2021-63,LQE2021-41
Demonstration of E-mode operation in planar type EID-MOS-HEMT with normally depleted AlGaN/GaN epitaxial layer

Takuma Nanjo(Mitsubishi Electric Corp.),  Takashi Imazawa(Mitsubishi Electric Corp.),  Akira Kiyoi(Mitsubishi Electric Corp.),  Tetsuro Hayashida(Mitsubishi Electric Corp.),  Tatsuro Watahiki(Mitsubishi Electric Corp.),  Naruhisa Miura(Mitsubishi Electric Corp.),  

[Date]2021-11-26
[Paper #]ED2021-36,CPM2021-70,LQE2021-48
Estimation of electrical characteristics of normally-off type AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 double insulators fabricated by ALD

Keitaro Toda(NITech),  Toshiharu Kubo(NITech),  Takashi Egawa(NITech),  

[Date]2021-11-26
[Paper #]ED2021-31,CPM2021-65,LQE2021-43
Fabrication of Recessed-gate AlGaN/GaN HEMTs using Low-damage Contactless Photo-Electrochemical Etching

Masachika Toguchi(Hokkaido Univ.),  Kazuki Miwa(Hokkaido Univ.),  Fumimasa Horikiri(SCIOCS),  Noboru Fukuhara(SCIOCS),  Yoshinobu Narita(SCIOCS),  Osamu Ichikawa(SCIOCS),  Ryota Isono(SCIOCS),  Takeshi Tanaka(SCIOCS),  Taketomo Sato(Hokkaido Univ.),  

[Date]2021-11-26
[Paper #]ED2021-34,CPM2021-68,LQE2021-46
High-breakdown-voltage Al0.36Ga0.64N-channel HFETs with a dual AlN/AlGaInN barrier layer

Akiyoshi Inoue(NIT),  Sakura Tanaka(NIT),  Takashi Egawa(NIT),  Makoto Miyoshi(NIT),  

[Date]2021-11-26
[Paper #]ED2021-32,CPM2021-66,LQE2021-44
Fabrication of Recessed-gate AlGaInN/AlGaN HFETs utilizing a photo-electrochemical (PEC) etching.

Kosaku Ito(Hokkaido Univ.),  Yuto Komatsu(Hokkaido Univ.),  Masachika Toguchi(Hokkaido Univ.),  Akiyoshi Inoue(Nagoya Inst. of Tech),  Sakura Tanaka(Nagoya Inst. of Tech),  Makoto Miyoshi(Nagoya Inst. of Tech),  Taketomo Sato(Hokkaido Univ.),  

[Date]2021-11-26
[Paper #]ED2021-35,CPM2021-69,LQE2021-47
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