Electronics-Component Parts and Materials(Date:2020/11/26)

Presentation
Internal and External Quantum Efficiency in InGaN Quantum Wells Estimated by Simultaneous Photoacoustic and Photoluminescence Method and Integrating-Sphere Method

Keito Mori(KIT),  Yuchi Takahashi(KIT),  Shigeta Sakai(KIT),  Yuya Morimoto(KIT),  Atsushi A. Yamaguchi(KIT),  Susumu Kusanagi(Sony),  Yuya Kanitani(Sony),  Yoshihiro Kudo(Sony),  Shigetaka Tomiya(Sony),  

[Date]2020-11-26
[Paper #]ED2020-1,CPM2020-22,LQE2020-52
Excitation wavelength dependence of temperature-induced photoluminescence quenching in InGaN quantum wells

Takumi Yamaguchi(KIT),  Kyosuke Ariga(KIT),  Keito Mori(KIT),  Atushi A. Yamaguchi(KIT),  

[Date]2020-11-26
[Paper #]ED2020-2,CPM2020-23,LQE2020-53
Calculation of carrier injection efficiency of AlGaN UVB Laser Diode

Kosuke Sato(Asahi-Kasei),  Tomoya Omori(Meijo Univ.),  Kazuki Yamada(Meijo Univ.),  Shunya Tanaka(Meijo Univ.),  Sayaka Ishizuka(Meijo Univ.),  Shohei Teramura(Meijo Univ.),  Sho Iwayama(Meijo Univ.),  Motoaki Iwaya(Meijo Univ.),  Hideto Miyake(Mie Univ.),  Tetsuya Takeuchi(Meijo Univ.),  Satoshi Kamiyama(Meijo Univ.),  Isamu Akasaki(Meijo Univ.),  

[Date]2020-11-26
[Paper #]ED2020-3,CPM2020-24,LQE2020-54
Study on p/n conductivity control of epitaxial AlInN films

Taiki Nakabayashi(NIT),  Haruka Takada(NIT),  Takashi Egawa(NIT),  Makoto Miyoshi(NIT),  Tetsuya Takeuchi(Meijo Univ.),  

[Date]2020-11-26
[Paper #]ED2020-4,CPM2020-25,LQE2020-55
Examination of GaN-based photodetectors for optical wireless power transmission system

Kosuke Yamamoto(NIT),  Pradip Dalapati(NIT),  Takashi Egawa(NIT),  Makoto Miyoshi(NIT),  

[Date]2020-11-26
[Paper #]ED2020-5,CPM2020-26,LQE2020-56
265 nm AlGaN-based LEDs grown on AlN substrates studied by electroluminescence and photoluminescence methods

Ryota Ishii(Kyoto Univ.),  Akira Yoshikawa(Asahi Kasei Corporation),  Kazuhiro Nagase(Asahi Kasei Corporation),  Mitsuru Funato(Kyoto Univ.),  Yoichi Kawakami(Kyoto Univ.),  

[Date]2020-11-26
[Paper #]ED2020-6,CPM2020-27,LQE2020-57
High-breakdown-voltage AlGaN channel HFETs with selective-area regrowth ohmic contacts

Akiyoshi Inoue(NIT),  Hiroki Harada(NIT),  Mizuki Yamanaka(NIT),  Takashi Egawa(NIT),  Makoto Miyoshi(NIT),  

[Date]2020-11-26
[Paper #]ED2020-7,CPM2020-28,LQE2020-58
Estimation of electrical properties of AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 double insulators fabricated by ALD

Shunichi Yokoi(Nagoya Inst. of Tech.),  Toshiharu Kubo(Nagoya Inst. of Tech.),  Takashi Egawa(Nagoya Inst. of Tech.),  

[Date]2020-11-26
[Paper #]ED2020-8,CPM2020-29,LQE2020-59
Mapping of Photoelectrochemical Etched Ni/GaN Schottky Contacts Using Scanning Internal Photoemission Microscopy

Ryo Matsuda(Univ. of Fukui),  Fumimasa Horikiri(SCIOCS),  Yoshinobu Narita(SCIOCS),  Takehiro Yoshida(SCIOCS),  Noboru Fukuhara(SCIOCS),  Tomoyoshi Mishima(Hosei Univ.),  Kenji Shiojima(Univ. of Fukui),  

[Date]2020-11-26
[Paper #]ED2020-9,CPM2020-30,LQE2020-60
Two-Dimensional Characterization of n-GaN Schottky Contacts Printed by Using Ni Nanoink

Yuto Kawasumi(Univ. of Fukui),  Yuto Yasui(Univ. of Fukui),  Yukiyasu Kashiwagi(ORIST),  Toshiyuki Tamai(ORIST),  Kenji Shiojima(Univ. of Fukui),  

[Date]2020-11-26
[Paper #]ED2020-10,CPM2020-31,LQE2020-61
Growth of GaN on AlN template with atomic-level flatness for High Electron Mobility Transistor

Tatsuya Shirato(Mie Univ.),  Kenjiro Uesugi(Mie Univ.),  Shigeyuki Kuboya(Mie Univ.),  Kanako Shojiki(Mie Univ.),  Hideto Miyake(Mie Univ.),  

[Date]2020-11-26
[Paper #]ED2020-11,CPM2020-32,LQE2020-62
Enhanced Breakdown Voltage in AlGaN/GaN HEMTs by Oxygen Plasma Treatment

Shunsuke Kamiya(Univ. of Fukui),  Takashi Nishitani(Univ. of Fukui),  Yu Matsuda(Univ. of Fukui),  Nozomu Takano(Univ. of Fukui),  Joel T. Asubar(Univ. of Fukui),  Hirokuni Tokuda(Univ. of Fukui),  Masaaki Kuzuhara(Kwansei Gakuin Univ.),  

[Date]2020-11-26
[Paper #]ED2020-12,CPM2020-33,LQE2020-63
GaN-based MIS-HEMTs with Mist Chemical Vapor Deposited Al2O3

Low Rui Shan(Univ. of Fukui),  Itsuki Nagase(Univ. of Fukui),  Ali Baratov(Univ. of Fukui),  Joel Tacla Asubar(Univ. of Fukui),  Hirokuni Tokuda(Univ. of Fukui),  Masaaki Kuzuhara(Kwansei Gakuin Univ.),  Zenji Yatabe(Kumamoto Univ.),  Kenta Naito(Kumamoto Univ.),  Motoyama Tomohiro(Kumamoto Univ.),  Yusui Nakamura(Kumamoto Univ.),  

[Date]2020-11-26
[Paper #]ED2020-13,CPM2020-34,LQE2020-64
Optimization of lateral Mg activation in LEDs with GaN tunnel junctions

Mikiko Tasaki(Meijo Univ.),  Kazuki Kiyohara(Meijo Univ.),  Mahito Odawara(Meijo Univ.),  Taichi Ito(Meijo Univ.),  Tetsuya Takeuchi(Meijo Univ.),  Satoshi Kamiyama(Meijo Univ.),  Motoaki Iwaya(Meijo Univ.),  Isamu Akasaki(Nagoya Univ.),  

[Date]2020-11-27
[Paper #]ED2020-18,CPM2020-39,LQE2020-69
Study on crystal growth for nanowire-based light emitter including multiple-quantum-shell and tunnel junction

Yoshiya Miyamoto(Meijo Univ.),  Naoki Sone(Meijo Univ.),  Weifang Lu(Meijo Univ.),  Renji Okuda(Meijo Univ.),  Kazuma Ito(Meijo Univ.),  Koji Okuno(Meijo Univ.),  Kazuyoshi Iida(Meijo Univ.),  Satoshi Kamiyama(Meijo Univ.),  Tetsuya Takeuchi(Meijo Univ.),  Motoaki Iwaya(Meijo Univ.),  Isamu Akasaki(Meijo Univ./Akasaki Research Center, Nagoya Univ.),  

[Date]2020-11-27
[Paper #]ED2020-19,CPM2020-40,LQE2020-70
Optimization of the optical waveguide layer in AlGaN-based UV-B LD

Shunya Tanaka(Meijo Univ.),  Kosuke Sato(Asahi-Kasei),  Shinji Yasue(Meijo Univ.),  Yuya Ogino(Meijo Univ.),  Kazuki Yamada(Meijo Univ.),  Sayaka Ishizuka(Meijo Univ.),  Tomoya Omori(Meijo Univ.),  Shohei Teramura(Meijo Univ.),  Sho Iwayama(Meijo Univ.),  Hideto Miyake(Mie Univ.),  Motoaki Iwaya(Meijo Univ.),  Tetsuya Takeuchi(Meijo Univ.),  Satoshi Kamiyama(Meijo Univ.),  Isamu Akasaki(Meijo Univ.),  

[Date]2020-11-27
[Paper #]ED2020-20,CPM2020-41,LQE2020-71
First demonstration of InGaN QW tunable single-mode laser with periodically slotted structure

Masahiro Uemukai(Osaka Univ.),  Akihiro Higuchi(Osaka Univ.),  Tomoyuki Tanikawa(Osaka Univ.),  Ryuji Katayama(Osaka Univ.),  

[Date]2020-11-27
[Paper #]ED2020-21,CPM2020-42,LQE2020-72
Crystalline Quality Improvement of Sputtered h-BN on Sapphire by High-Temperature Annealing

Ryoji Kataoka(Mie Univ.),  Haruhiko Koizumi(Mie Univ.),  Sho Iwayama(Mie Univ.),  Hideto Miyake(Mie Univ.),  

[Date]2020-11-27
[Paper #]ED2020-22,CPM2020-43,LQE2020-73
CBD Growth of MgZnO Nanorods and Their UV Light Detecting Application

Kohdai Hamamoto(Ehime Univ.),  Rikuto Kanamaru(Ehime Univ.),  Tomoaki Terasako(Ehime Univ.),  Masakazu Yagi(Natl. Inst. Technol., Kagawa Coll.),  Yutaka Furubayashi(Kochi Univ. Technol.),  Tetsuya Yamamoto(Kochi Univ. Technol.),  

[Date]2020-11-27
[Paper #]ED2020-14,CPM2020-35,LQE2020-65
Time Response Characteristics of PEDOT:PSS/ZnO Nanorods/GZO Heterojunction UV Light Detectors

Kenta Yamada(Ehime Univ.),  Tomoaki Terasako(Ehime Univ.),  Masakazu Yagi(Natl. Inst. Technol., Kagawa Coll.),  Yutaka Furubayashi(Kochi Univ. Technol.),  Tetsuya Yamamoto(Kochi Univ. Technol.),  

[Date]2020-11-27
[Paper #]ED2020-17,CPM2020-38,LQE2020-68
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