Electronics-Component Parts and Materials(Date:2011/05/12)

Presentation
表紙

,  

[Date]2011/5/12
[Paper #]
目次

,  

[Date]2011/5/12
[Paper #]
Fabrication of Cu_xS and Cu_xZn_yS thin films by the electrochemical deposition method

Kai YANG,  Yuki NAKASHIMA,  Masaya ICHIMURA,  

[Date]2011/5/12
[Paper #]ED2011-1,CPM2011-8,SDM2011-14
High thickness AlN growth with period trench patterned c-plane AlN on a-plane Sapphire by low-pressure HVPE

Yuta TAKAGI,  Hideto MIYAKE,  Kazumasa HIRAMATSU,  

[Date]2011/5/12
[Paper #]ED2011-2,CPM2011-9,SDM2011-15
Raman Scattering Spectroscopy for Epitaxial AlN Films

Shibo Yang,  Reina Miyagawa,  Hideto Miyake,  Kazumasa Hiramatsu,  Hiroshi Harima,  

[Date]2011/5/12
[Paper #]ED2011-3,CPM2011-10,SDM2011-16
Thickness and surface dependence of the carrier lifetime in free-standing n-type 4H-SiC epilayers

Masashi KATO,  Atsushi YOSHIDA,  Masaya ICHIMURA,  

[Date]2011/5/12
[Paper #]ED2011-4,CPM2011-11,SDM2011-17
Correlation between strain fields and excess carrier lifetime maps in 3C-SiC wafer

Atsushi Yoshida,  Masashi Kato,  Masaya Ichimura,  

[Date]2011/5/12
[Paper #]ED2011-5,CPM2011-12,SDM2011-18
Characterization of SiC photoelectrochemical properties for water splitting

Tomonari YASUDA,  Masashi KATO,  Masaya ICHIMURA,  

[Date]2011/5/12
[Paper #]ED2011-6,CPM2011-13,SDM2011-19
Improvement of n-type 4H-SiC Schottky diode characteristics using passivation of defect by anodic oxidation

Masaya KIMURA,  Masashi KATO,  KIMURA Masaya /,  

[Date]2011/5/12
[Paper #]ED2011-7,CPM2011-14,SDM2011-20
Lateral overgrowth of GaN by ammonia-based metal-organic molecular beam epitaxy

Shota Uchiyama,  Chia-Hung Lin,  Takahiro Maruyama,  Shigeya Naritsuka,  

[Date]2011/5/12
[Paper #]ED2011-8,CPM2011-15,SDM2011-21
Growth of InGaN nanowires on a (111)Si substrate by RF-MBE

T. Tabata,  J. H. Paek,  Y. Honda,  M. Yamaguchi,  H. Amano,  

[Date]2011/5/12
[Paper #]ED2011-9,CPM2011-16,SDM2011-22
Molecular beam epitaxy growth of AlGaPN alloys for optical confinement structure on Si substrate

Keisuke KUMAGAI,  Kohei SHOJI,  Tsuyoshi KAWAI,  Keisuke YAMANE,  Hiroto SEKIGUCHI,  Hiroshi OKADA,  Akihiro WAKAHARA,  

[Date]2011/5/12
[Paper #]ED2011-10,CPM2011-17,SDM2011-23
Molecular beam epitaxy growth of BGaP

Noriyuki URAKAMI,  Futoshi FUKAMI,  Hiroto SEKIGUCHI,  Hiroshi OKADA,  Akihiro WAKAHARA,  

[Date]2011/5/12
[Paper #]ED2011-11,CPM2011-18,SDM2011-24
Curvature control of substrate by MOVPE growth of GaN with voids

Sumito OHUCHI,  Hideto MIYAKE,  Kazumasa HIRAMATSU,  

[Date]2011/5/12
[Paper #]ED2011-12,CPM2011-19,SDM2011-25
MOVPE growth of thick-InGaN on (1-101)GaN/Si

Tomoyuki TANIKAWA,  Yoshio HONDA,  Masahito YAMAGUCHI,  Hiroshi AMANO,  Nobuhiko SAWAKI,  

[Date]2011/5/12
[Paper #]ED2011-13,CPM2011-20,SDM2011-26
MOCVD growth of GaN on graphite substrates

Shinichi Kohda,  Toshiyuki Takizawa,  Nobuaki Nagao,  Masahiro Ishida,  Tetsuzo Ueda,  

[Date]2011/5/12
[Paper #]ED2011-14,CPM2011-21,SDM2011-27
Antiphase domains in GaP grown on Si substrates using metalorganic vapor phase epitaxy

Yasushi TAKANO,  Tatsuya TAKAGI,  Tatsuru MISAKI,  Ryo MIYAHARA,  

[Date]2011/5/12
[Paper #]ED2011-15,CPM2011-22,SDM2011-28
Growth of GaN and AlGaN on β-Ga_2O_3(100) substrate

Shun Ito,  Kenichiro Takeda,  Kengo Nagata,  Hiroki Aoshima,  Kosuke Takehara,  Motoaki Iwaya,  Tetuya Takeuchi,  Satoshi Kamiyama,  Isamu Akasaki,  Hiroshi Amano,  

[Date]2011/5/12
[Paper #]ED2011-16,CPM2011-23,SDM2011-29
MOVPE growth of nitrides analyzed using a novel in-situ X-ray diffraction system

Daiki TANAKA,  Daisuke IIDA,  Motoaki IWAYA,  Tetsuya TAKEUCHI,  Satoshi KAMIYAMA,  Isamu AKASAKI,  

[Date]2011/5/12
[Paper #]ED2011-17,CPM2011-24,SDM2011-30
High-quality AlN/GaN distributed Bragg reflectors grown on AlN templates

Kouta YAGI,  Mitsuru KAGA,  Kouji YAMASHITA,  Kenichirou TAKEDA,  Motoaki IWAYA,  Tetsuya TAKEUCHI,  Satoshi KAMIYAMA,  Isamu AKASAKI,  Hiroshi AMANO,  

[Date]2011/5/12
[Paper #]ED2011-18,CPM2011-25,SDM2011-31
123>> 1-20hit(42hit)