Electronics-Component Parts and Materials(Date:2010/11/04)

Presentation
表紙

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[Date]2010/11/4
[Paper #]
目次

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[Date]2010/11/4
[Paper #]
Optical properties of ZnO films grown on sapphire substrates using high-energy H_2O generated by a catalytic reaction

Hitoshi MIURA,  Takashi OOTANI,  Tomoyoshi KURODA,  Hiroshi NISHIYAMA,  Kanji YASUI,  

[Date]2010/11/4
[Paper #]ED2010-142,CPM2010-108,LQE2010-98
Study on improved crystal quality of non-polar A-plane InN grown on r-plane sapphire by RF-MBE

Tsutomu ARAKI,  Keisuke KAWASHIMA,  Tomohiro YAMAGUCHI,  Yasushi NANISHI,  

[Date]2010/11/4
[Paper #]ED2010-143,CPM2010-109,LQE2010-99
GaN growth on pseudo (111)Al substrates by RF-MBE

Tohru HONDA,  Masato HAYASHI,  Taiga GOTO,  Tatsuhiro IGAKI,  

[Date]2010/11/4
[Paper #]ED2010-144,CPM2010-110,LQE2010-100
Growth characteristics of GaNP layer and InAs-based QDs on Si substrate

Satoru Tanabe,  Rei Nishio,  Yoshitaka Kobayashi,  Kosuke Nemoto,  Tomoyuki Miyamoto,  

[Date]2010/11/4
[Paper #]ED2010-145,CPM2010-111,LQE2010-101
AlN growth on SiC by LP-HVPE

Kenta OKUMURA,  Takuya NOMURA,  Hideto MIYAKE,  Kazumasa HIRAMATSU,  Osamu ERYUU,  

[Date]2010/11/4
[Paper #]ED2010-146,CPM2010-112,LQE2010-102
ELO-AlN on trench-patterned AlN/sapphire by low-pressure HVPE

Kohei FUJITA,  Hideto MIYAKE,  Kazumasa HIRAMATSU,  Jyun NORIMATSU,  Hideki HIRAYAMA,  

[Date]2010/11/4
[Paper #]ED2010-147,CPM2010-113,LQE2010-103
A Comprehensive Understanding of Previously-Reported Polarization Properties in Nonpolar and Semipolar InGaN Quantum Wells

Atsushi A. YAMAGUCHI,  Kazunobu KOJIMA,  

[Date]2010/11/4
[Paper #]ED2010-148,CPM2010-114,LQE2010-104
Carrier diffusion dynamics in InGaN/GaN SQW studied by spatial and temporal resolved PL spectroscopy : Efficiency droop mechanism assessed by SNOM

Akira Hashiya,  Akio Kaneta,  Mitsuru Funato,  Yoichi Kawakami,  

[Date]2010/11/4
[Paper #]ED2010-149,CPM2010-115,LQE2010-105
100 mW Deep Ultraviolet Emission from AlGaN/AlN Quantum Wells by Electron Beam Pumping

Takao OTO,  Ryan G. BANAL,  Ken KATAOKA,  Mitsuru FUNATO,  Yoichi KAWAKAMI,  

[Date]2010/11/4
[Paper #]ED2010-150,CPM2010-116,LQE2010-106
High Efficiency AlInN Ultraviolet Photodiodes on AlN Templates

Yusuke SAKAI,  Junki ICHIKAWA,  Takashi EGAWA,  

[Date]2010/11/4
[Paper #]ED2010-151,CPM2010-117,LQE2010-107
Current control of AlGaN/GaN HEMT with multi-mesa nanochannels

Kota OHI,  Tamotsu HASHIZUME,  

[Date]2010/11/4
[Paper #]ED2010-152,CPM2010-118,LQE2010-108
High-Power GaN-HEMT for Millimeter-Wave Amplifier

Kozo MAKIYAMA,  Toshihiro OHKI,  Naoya OKAMOTO,  Masahito KANAMURA,  Satoshi MASUDA,  Yasuhiro NAKASHA,  Kazukiyo JOSHIN,  Kenji IMANISHI,  Naoki HARA,  Shiro OZAKI,  Norikazu NAKAMURA,  Toshihide KIKKAWA,  

[Date]2010/11/4
[Paper #]ED2010-153,CPM2010-119,LQE2010-109
Characterization of insulated gates on GaN and AlGaN/GaN structures

Yujin HORI,  Naohisa HARADA,  Chihoko MIZUE,  Tamotsu HASHIZUME,  

[Date]2010/11/4
[Paper #]ED2010-154,CPM2010-120,LQE2010-110
Study of etching-induced damage in p-type GaN by hard X-ray photoelectron spectroscopy

Daigo KIKUTA,  Tetsuo NARITA,  Naoko TAKAHASHI,  Keita KATAOKA,  Yasuji KIMOTO,  Tsutomu UESUGI,  Tetsu KACHI,  Masahiro SUGIMOTO,  

[Date]2010/11/4
[Paper #]ED2010-155,CPM2010-121,LQE2010-111
Vertical GaN Diode on GaN Free-Standing Substrate

Shuichi YAGI,  Shoko HIRATA,  Yasunobu SUMIDA,  Masahiro BESSHO,  Hiroji KAWAI,  Toshiharu MATSUEDA,  Akira USUI,  

[Date]2010/11/4
[Paper #]ED2010-156,CPM2010-122,LQE2010-112
Vertical Heterojunction Field-Effect Transistors on Low Dislocation Density GaN Substrates

Masaya Okada,  Yu Saitoh,  Mitsunori Yokoyama,  Ken Nakata,  Seiji Yaegassi,  Koji Katayama,  Masaki Ueno,  Makoto Kiyama,  Tukuru Katsuyama,  Takao Nakamura,  

[Date]2010/11/4
[Paper #]ED2010-157,CPM2010-123,LQE2010-113
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[Date]2010/11/4
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