Electronics-Component Parts and Materials(Date:2006/11/02)

Presentation
表紙

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[Date]2006/11/2
[Paper #]
目次

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[Date]2006/11/2
[Paper #]
Preparation of AZO Thin Films by Sputtering Method

Ayumu KAWAKAMI,  Toru NOGUCHI,  Akiyuki HIGASHIDE,  Shinsuke MIYAZAKI,  Hidehiko SHIMIZU,  Takeo MARUYAMA,  Haruo IWANO,  Tkahiro KAWAKAMI,  Yoichi HOSHI,  

[Date]2006/11/2
[Paper #]CPM2006-113
Preparation of ITO Thin Films on Plastic Substrate

Masaki TAKEUCHI,  Kazuya MORISHITA,  Takeshi UMETSU,  Yusuke NAKATA,  Shinsuke MIYAZAKI,  Hidehiko SHIMIZU,  Takeo MARUYAMA,  Haruo IWANO,  Takahiro KAWAKAMI,  Yoichi HOSHI,  Masahiro MINAGAWA,  

[Date]2006/11/2
[Paper #]CPM2006-114
Fabrication of Cr_2O_3 Thin Film by RF Magnetron Sputtering

Takeshi ASADA,  Kenjirou NAGASE,  Takayuki YAMADA,  Nobuyuki IWATA,  Hiroshi YAMAMOTO,  

[Date]2006/11/2
[Paper #]CPM2006-115
Growth Control of Carbon Nanotubes on Ni/Mo Bilayer

Hiroki OKUYAMA,  Nobuyuki IWATA,  Hiroshi YAMAMOTO,  

[Date]2006/11/2
[Paper #]CPM2006-116
Cathodo-Luminescence study of AlInN films grown by RF-MBE

Yu Mimura,  Wataru Terashima,  Song-Bek Che,  Yoshihiro Ishitani,  Akihiko Yoshikawa,  

[Date]2006/11/2
[Paper #]CPM2006-117
Reactive Sputter Deposition of AlN Film and Its Application to LD Submount

Akihiro SHIONO,  Masahide NAKAKUKI,  Isao KOBAYASHI,  Tomohiko YAMAKAMI,  Rinpei HAYASHIBE,  Motoki OBATA,  Katuya ABE,  Kiichi KAMIMURA,  

[Date]2006/11/2
[Paper #]CPM2006-118
Thermal Stability and Morphology of Interfaces in Cu/ZrN/SiOC/Si systems

Atsushi NOYA,  Masaru SATO,  Mayumi B. TAKEYAMA,  Eiji AOYAGI,  

[Date]2006/11/2
[Paper #]CPM2006-119
Properties of Extremely Thin TiN_x Barrier by New Deposition Method with Radical Reaction for Cu Interconnects

Mayumi B. TAKEYAMA,  Tadayoshi YANAGITA,  Atsushi NOYA,  

[Date]2006/11/2
[Paper #]CPM2006-120
Preparation of HfN_x thin films by hot-wire method and their barrier properties interposed between Cu interconnects and SiO_2 or SiOC layers

Masaru SATO,  Mayumi B. TAKEYAMA,  Atsushi NOYA,  

[Date]2006/11/2
[Paper #]CPM2006-121
Surface roughness control of SiGe layer deposited by Ion Beam Sputtering toward strained Si fabrication

Jun YAMAMOTO,  Yuta SAKAGUCHI,  Kimihiro NARUSE,  Kimihiro SASAKI,  

[Date]2006/11/2
[Paper #]CPM2006-122
Thermoelectric performance of deteriorated SiGe thin films : influence from substrate

Akinari MATOBA,  Toshio HAYAHIRA,  Takahiro TSUDUKI,  Kimihiro SASAKI,  Youichi OKAMOTO,  Jun MORIOTO,  

[Date]2006/11/2
[Paper #]CPM2006-123
Formation of high-density nanodots on Si(001)-2°off surface aiming at the formation of high-density Ge nanodots embedded in SiC layer

Tetsushi KANEMARU,  Tomoaki OGIWARA,  Kanji YASUI,  Tadashi AKAHANE,  Masasuke TAKATA,  

[Date]2006/11/2
[Paper #]CPM2006-124
Deterioration of MOVPE InN during the growth

Kenichi SUGITA,  Yoshinori HOUCHIN,  Akihiro HASHIMOTO,  Akio YAMAMOTO,  

[Date]2006/11/2
[Paper #]CPM2006-125
Growth Delay Time on fabricating thin ZrO_2 film by Limited Reaction Sputtering

Hidetaka SUGIYAMA,  Nobuo KOJIMA,  Taro YAMAGISHI,  YING Zhou,  Kimihiro SASAKI,  

[Date]2006/11/2
[Paper #]CPM2006-126
The practical sputtering system for oxide films by oxygen ion implantation

Shinobu CHIBA,  Kimihiro SASAKI,  Akira MOTOKI,  Tomonobu HATA,  Akihiko ITO,  

[Date]2006/11/2
[Paper #]CPM2006-127
Effect of Surface Roughness of Substrate on Structure and Temperature Coefficient of Resistance (TCR) of NiCr Films Deposited by Sputtering

Satoshi IWATSUBO,  Takaaki SHIMIZU,  

[Date]2006/11/2
[Paper #]CPM2006-128
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[Date]2006/11/2
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[Date]2006/11/2
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