Electronics-Component Parts and Materials(Date:2006/09/28)

Presentation
表紙

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[Date]2006/9/28
[Paper #]
目次

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[Date]2006/9/28
[Paper #]
X-band AlGaN/GaN HEMTs with 40W Output Power

Yasushi Kashiwabara,  Kazutoshi Masuda,  Keiichi Matsushita,  Hiroyuki Sakurai,  Shinji Takatsuka,  Kazutaka Takagi,  Hisao Kawasaki,  Yoshiharu Takada,  Kunio Tsuda,  

[Date]2006/9/28
[Paper #]ED2006-152,CPM2006-89,LQE2006-56
Improvement of Breakdown Voltage of AlGaN/GaN HEMT

Ken Nakata,  Takeshi Kawasaki,  Keita Matsuda,  Takeshi Igarashi,  Seiji Yaegassi,  

[Date]2006/9/28
[Paper #]ED2006-153,CPM2006-90,LQE2006-57
RF characteristics of AlGaN/GaN-HEMTs on Si substrates

Hideyuki OKITA,  Juro MITA,  Yoshiaki SANO,  Toshiharu MARUI,  Masanori ITO,  Shinichi HOSHI,  Fumihiko TODA,  Shohei SEKI,  Takashi EGAWA,  

[Date]2006/9/28
[Paper #]ED2006-154,CPM2006-91,LQE2006-58
Study on crystal growth of AlGaN/GaN HEMT on SiC substrate

Takahiko IWASAKI,  Hiroyasu ISHIKAWA,  Takashi EGAWA,  

[Date]2006/9/28
[Paper #]ED2006-155,CPM2006-92,LQE2006-59
GaN Vertical Schottky Barrier Diodes with Pseudo-SuperJunction Structures

Kazushi NAKAZAWA,  Hiroaki UENO,  Hisayoshi MATSUO,  Manabu YANAGIHARA,  Yasuhiro UEMOTO,  Tetsuzo UEDA,  Tsuyoshi TANAKA,  

[Date]2006/9/28
[Paper #]ED2006-156,CPM2006-93,LQE2006-60
Interface control for GaN-based devices

T. Kimura,  J. Kotani,  H. Kato,  M. Tajima,  E. Ogawa,  C. Mizue,  T. Hashizume,  

[Date]2006/9/28
[Paper #]ED2006-157,CPM2006-94,LQE2006-61
Estimation of AlGaN/GaN HFET surface barrier height with Cat-CVD SiN passivation by XPS and C-V measurements

Norio Onojima,  Masataka Higashiwaki,  Jun Suda,  Tsunenobu Kimoto,  Takashi Mimura,  Toshiaki Matsui,  

[Date]2006/9/28
[Paper #]ED2006-158,CPM2006-95,LQE2006-62
Temperature Distribution Analysis of AlGaN/GaN HFETs Operated at High Voltage Using Micro-Raman Spectroscopy

Kenichi KOSAKA,  Tatsuya FUJISHIMA,  Kaoru INOUE,  Akihiro HINOKI,  Tomoaki YAMADA,  Tadayoshi TSUCHIYA,  Junjiroh KIKAWA,  Shinichi KAMIYA,  Akira SUZUKI,  Tsutomu ARAKI,  Yasushi NANISHI,  

[Date]2006/9/28
[Paper #]ED2006-159,CPM2006-96,LQE2006-63
Influences of nitrogen plasma on crystalline quality of GaN films grown on Si(111) substrates at low-temperatures by electron cyclotron resonance plasma-assisted molecular-beam epitaxy

Tokuo YODO,  Yuki SHIRAISHI,  Kiyotaka HIRATA,  Hiroyuki TOMITA,  Noriaki NISIE,  Hiroaki HORIBE,  Keigo IWATA,  Yoshiyuki HARADA,  

[Date]2006/9/28
[Paper #]ED2006-160,CPM2006-97,LQE2006-64
Investigation of optical gain of InGaN quantum well lasers emitting at 400 and 470nm

Kazunobu Kojima,  Mitsuru Funato,  Yoichi Kawakami,  Ulrich T. Schwarz,  Harald Braun,  Shinichi Nagahama,  Takashi Mukai,  

[Date]2006/9/28
[Paper #]ED2006-161,CPM2006-98,LQE2006-65
Epitaxial growth and optical properties of InGaN/GaN quantum wells on semipolar {11-22} GaN bulk crystals

Masaya Ueda,  Kazunobu Kojima,  Mitsuru Funato,  Yoichi Kawakami,  Yukio Narukawa,  Takashi Mukai,  

[Date]2006/9/28
[Paper #]ED2006-162,CPM2006-99,LQE2006-66
Fabrication of optical communication wavelength photodetector using GaN/AlN multiple quantum disk nanocolumn on Si(111) substrate

Hiroyuki UCHIDA,  Akihiko KIKUCHI,  Katsumi KISHINO,  

[Date]2006/9/28
[Paper #]ED2006-163,CPM2006-100,LQE2006-67
Photoluminescence from inelastic scattering processes of excitons under intense-excitation conditions in a GaN thin film grown by Metal-organic vapor phase epitaxy

Masaaki Nakayama,  Hiroyasu Tanaka,  Masanobu Ando,  Toshiya Uemura,  

[Date]2006/9/28
[Paper #]ED2006-164,CPM2006-101,LQE2006-68
Features of Cathodoluminescence from bulk InGaN microcrystals

Hisashi KANIE,  Yuji SEMA,  

[Date]2006/9/28
[Paper #]ED2006-165,CPM2006-102,LQE2006-69
Analysis of internal quantum efficiency of GaN-based light emitting diodes by investigating electroluminescence lifetime

Kotaro ZAIMA,  Tetsuo NARITA,  Shinji SAITO,  Koichi TACHIBANA,  Hajime NAGO,  Genichi HATAKOSHI,  Shinya NUNOUE,  

[Date]2006/9/28
[Paper #]ED2006-166,CPM2006-103,LQE2006-70
Fabrication of GaN-based unipolar UV LEDs grown by MOVPE

Toshiaki Kobayashi,  Shigetoshi Komiyama,  Yoshihiro Mashiyama,  Tohru Honda,  

[Date]2006/9/28
[Paper #]ED2006-167,CPM2006-104,LQE2006-71
Fabrication and characterization of UV light emitters on various substrates

H. Watanabe,  K. Iida,  K. Takeda,  K. Nagamatsu,  T. Sumii,  T. Nagai,  K. Balakrishnan,  M. Iwaya,  S. Kamiyama,  H. Amano,  I. Akasaki,  A. Bando,  

[Date]2006/9/28
[Paper #]ED2006-168,CPM2006-105,LQE2006-72
GaN films deposited by CS-MBD with pulsed source feeding

Masatoshi ARAI,  Koichi SUGIMOTO,  Shinichi EGAWA,  Taichi BABA,  HONDA Tohru /,  

[Date]2006/9/28
[Paper #]ED2006-169,CPM2006-106,LQE2006-73
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