Electronics-Component Parts and Materials(Date:2005/07/25)

Presentation
表紙

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[Date]2005/7/25
[Paper #]
目次

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[Date]2005/7/25
[Paper #]
High Rate Deposition of TiO_2 Films by Ion Beam Assist Evaporation

Shigetoshi KAWAGUCHI,  Yoichi HOSHI,  Osamu KAMIYA,  

[Date]2005/7/25
[Paper #]CPM2005-59
Low-Temperature Growth of Crystallized ITO Films by Gas Flow Sputtering Utilizing Low-Energy Ion Bombardment

Kiyoshi ISHII,  Koji WATANBE,  Yoshifumi SAITOU,  Hiroshi SAKUMA,  

[Date]2005/7/25
[Paper #]CPM2005-60
Effect of Cu-Zr amorphous alloy composition on interfacial reaction in Cu-Zr/n-InP contact

Seiichi SHIBATA,  Mayumi TAKEYAMA,  Atsushi NOYA,  

[Date]2005/7/25
[Paper #]CPM2005-61
Control of Hetero-Interface and Crystal Quality by Insertion of 1 Monolayer

Yoshikazu TAKEDA,  Takahiro MORI,  Toshiaki ADACHI,  Masao TABUCHI,  Shinya HITOMI,  Takeshi YAMAUCHI,  Arao NAKAMURA,  

[Date]2005/7/25
[Paper #]CPM2005-62
Formation of [111]-Textured Cu Film on Thin Nb[110] Barrier on SiO_2

Md. MANIRUZZAMAN,  Masaru SATO,  Mayumi TAKEYAMA,  Atsushi NOYA,  

[Date]2005/7/25
[Paper #]CPM2005-63
Barrier properties of thin ZrN film in Cu/ZrN/SiOC/Si system

Masaru SATO,  Mayumi TAKEYAMA,  Atsushi NOYA,  

[Date]2005/7/25
[Paper #]CPM2005-64
Formation of Interfaces with Well-controlled Interfacial Reaction and Diffusion in Cu/VN/SiOC/Si System Using Ultra-thin VN Barrier

Mayumi TAKEYAMA,  Genta MIZUNO,  Eiji AOYAGI,  Atsushi NOYA,  

[Date]2005/7/25
[Paper #]CPM2005-65
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[Date]2005/7/25
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[Date]2005/7/25
[Paper #]
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[Date]2005/7/25
[Paper #]