Electronics-Component Parts and Materials(Date:2004/05/06)

Presentation
表紙

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[Date]2004/5/6
[Paper #]
目次

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[Date]2004/5/6
[Paper #]
InGaAs and InAs layers on GaAs substrates grown at low temperature by MOCVD

Masayoshi Umezawa,  Kazu Kobayashi,  Yasushi Takano,  Syunrou Fuke,  

[Date]2004/5/6
[Paper #]ED2004-15,CPM2004-10,SDM2004-15
ErP/GaInP/GaAs heterostructures grown by LP-OMVPE

Atsushi KOIZUMI,  Hiroyuki OHNISHI,  Hironori OFUCHI,  Kazuteru TAKABA,  Masao TABUCHI,  Takashi KUNO,  Tomonari HIRATA,  Takeshi YAMAUCHI,  Satomi SHIMADA,  Shinya HITOMI,  Ichirou YAMAKAWA,  Arao NAKAMURA,  Yoshikazu TAKEDA,  

[Date]2004/5/6
[Paper #]ED2004-16,CPM2004-11,SDM2004-16
Low-temperature MBE growth and optical properties of Er-doped AlGaAs

Takahiro MORI,  Daina INOUE,  Yuki INOUE,  Masao TABUCHI,  Yoshikazu TAKEDA,  

[Date]2004/5/6
[Paper #]ED2004-17,CPM2004-12,SDM2004-17
Growth of GaN/AlN pyramid structure on Si substrate by MOVPE

Yoshio HONDA,  Tsuyoshi NAKAMURA,  Masahito YAMAGUCHI,  Nobuhiko SAWAKI,  

[Date]2004/5/6
[Paper #]ED2004-18,CPM2004-13,SDM2004-18
Conductivity control ofAlGaN using monomethylsilane

Shinya Itoh,  Hiroki Tsuma,  Akihiro Wakahara,  Hiroshi Okada,  Akira Yoshida,  

[Date]2004/5/6
[Paper #]ED2004-19,CPM2004-14,SDM2004-19
Control of group-III atoms distribution in thin quantum wells by change of growth temperature : X-ray CTR scattering measurements

Shinichi HISADOME,  Hiroyuki YAMADA,  Atsushi KOIZUMI,  Ryo OGA,  Masao TABUCHI,  Yoshikazu TAKEDA,  

[Date]2004/5/6
[Paper #]ED2004-20,CPM2004-15,SDM2004-20
Lateral growth on (100) GaAs substrates by MOCVD

Takayuki IWASE,  Shunrou FUKE,  Yasushi TAKANO,  

[Date]2004/5/6
[Paper #]ED2004-21,CPM2004-16,SDM2004-21
Optical properties of ZnGeN_2 epitaxial layer

Kei SHIGEHISA,  Takao MISAKI,  Akihiro WAKAHARA,  Hiroshi OKADA,  Akira YOSHIDA,  

[Date]2004/5/6
[Paper #]ED2004-22,CPM2004-17,SDM2004-22
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[Date]2004/5/6
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[Date]2004/5/6
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