Electronics-Component Parts and Materials(Date:2002/10/03)

Presentation
表紙

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[Date]2002/10/3
[Paper #]
目次

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[Date]2002/10/3
[Paper #]
Chemical and electronic properties of GaN and AlGaN Surfaces

Tamotsu Hashizume,  

[Date]2002/10/3
[Paper #]CPM2002-100
Measurement of Surface-States in AlGaN/GaN HEMT with Open-Gate FET

Daigo KIKUTA,  Jin-Ping AO,  Yasuo OHNO,  

[Date]2002/10/3
[Paper #]CPM2002-101
Copper-Gate AlGaN/GaN HEMTs with Low Gate Leakage Current

Jin-Ping Ao,  Daigo Kikuta,  Yasuo Ohno,  

[Date]2002/10/3
[Paper #]CPM2002-102
High resistivity layer by implantation of Zn and its application to AlGaN/GaN HEMT

Toshiyuki OISHI,  Naruhisa MIURA,  Muneyoshi SUITA,  Takuma NANJO,  Yuji ABE,  Tatsuso OZEKI,  Hiroyasu ISHIKAWA,  Takashi EGAWA,  Takashi JIMBO,  

[Date]2002/10/3
[Paper #]CPM2002-103
High-Frequency Characteristics and Delay-Time Analysis of Short-Channel AlGaN/GaN Heterojunction FETs

Takashi INOUE,  Kensuke KASAHARA,  Yasuhiro OKAMOTO,  Yuhji ANDO,  Tatsuo NAKAYAMA,  Hironobu MIYAMOTO,  Masaaki KUZUHARA,  

[Date]2002/10/3
[Paper #]CPM2002-104
Characterization of High Breakdown Voltage AlGaN/GaN Heterojunction FETs with a Field Plate Gate

Yuji ANDO,  Yasuhiro OKAMOTO,  Hironobu MIYAMOTO,  Tatsuo NAKAYAMA,  Takashi INOUE,  Masaaki KUZUHARA,  

[Date]2002/10/3
[Paper #]CPM2002-105
[OTHERS]

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[Date]2002/10/3
[Paper #]