Electronics-Component Parts and Materials(Date:2002/05/17)

Presentation
表紙

,  

[Date]2002/5/17
[Paper #]
目次

,  

[Date]2002/5/17
[Paper #]
Growth and electronic properties of thick CdTe layers on GaAs by MOVPE

Yasuhiro Kawauchi,  Tomoaki Ishiguro,  Hiroshi Morishita,  Takashi Mabuchi,  Yasunori Agata,  Madan Niraula,  Kazuhito Yasuda,  

[Date]2002/5/17
[Paper #]CPM2002-25
Growth and electronic properties of thick CdTe layers on GaAs/Si by MOVPE

Hiroshi Morishita,  Tomoaki Ishiguro,  Yasuhiro Kawauchi,  Takashi Mabuchi,  Yasunori Agata,  Madan Niraula,  Kazuhito Yasuda,  

[Date]2002/5/17
[Paper #]CPM2002-26
Low temperature growth of InGaAs layers on GaAs substrates by metalorganic chemical vapor deposition

H Iwahori,  K Kobayashi,  N Kuroyanagi,  K Kuwahara,  S Fuke,  Y Takano,  

[Date]2002/5/17
[Paper #]CPM2002-27
Low-temperature MBE growth and optical properties of Er-doped GaAs

Hidenobu MAKI,  Takahiro SONOYAMA,  Kazuo OGAWA,  Masao TABUCHI,  Yosikazu TAKEDA,  

[Date]2002/5/17
[Paper #]CPM2002-28
Fabrication of InAs quantum dots by droplet epitaxy on InGaAsP lattice-matched with LnP substrate

Ryo OGA,  Woo-Sik LEE,  Yasufumi FUJIWARA,  Yoshikazu TAKEDA,  

[Date]2002/5/17
[Paper #]CPM2002-29
Characterization of GaAs Solar Cell on Si by epitaxial lift off techniques

N Okada,  H Taguchi,  K Itakura,  T Soga,  T Jimbo,  M Umeno,  

[Date]2002/5/17
[Paper #]CPM2002-30
Electroluminescence properties of Er,O-codoped GaAs/GaInP grown by OMVPE

Atsushi KOIZUMI,  Yasufumi FUJIWARA,  Kentaro INOUE,  Taketoshi YOSHIKANE,  Yoshikazu TAKEDA,  

[Date]2002/5/17
[Paper #]CPM2002-31
C-doped GaAsSb grown by MOCVD with CBr_4

Yasuhiro ODA,  Noriyuki WATANABE,  Takashi KOBAYASHI,  

[Date]2002/5/17
[Paper #]CPM2002-32
Investigation of Sputtering Gases on IBS Growth of Si and Ge

Takaharu Ikeda,  Haruhiko Konta,  Makoto Sugino,  Kimihiro Sasaki,  Tomonobu Hata,  

[Date]2002/5/17
[Paper #]CPM2002-33
The effects of low temperature growth and IBAD on C incorporation into GeC epilayers on Si (001) substrates

M OKINAKA,  K MIYATAKE,  Y HAMANA,  T TOKUDA,  J OHTA,  M NUNOSHITA,  

[Date]2002/5/17
[Paper #]CPM2002-34
SiGe HBT by HC1-free selective epitaxial growth

Yukihiro Kiyota,  Tsutomu Udo,  Takashi Hashimoto,  Akihiro Kodama,  Hiromi Shimamoto,  Reiko Hayami,  Katsuyoshi Washio,  

[Date]2002/5/17
[Paper #]CPM2002-35
Electron Emission from Inorganic and Organic Ferro-electric Substance by Polarization Inversion

Shinji OGAWA,  Hidenori NAKAMURA,  MORITA Shinzo /,  

[Date]2002/5/17
[Paper #]CPM2002-36
Interface recombination velocity measurements for SOI wafers by μ-PCD with electric field

Toshio Kuwayama,  Masaya Ichimura,  Eisuke Arai,  

[Date]2002/5/17
[Paper #]CPM2002-37
Investigation of electron irradiation induced defects in single crystal CuInSe_2 thin films

Naoki FUJITA,  Lee HAE-SEOK,  Hiroshi OKADA,  Akihiro WAKAHARA,  Akira YOSHIDA,  Takeshi OHSHIMA,  Hisayoshi ITOH,  

[Date]2002/5/17
[Paper #]CPM2002-38
Deposition and characterization of SnS thin films by electrochemical deposition method with pulse voltage conditions

Naoya Sato,  Masaya Ichimura,  Eisuke Arai,  Yoshihisa Yamazaki,  

[Date]2002/5/17
[Paper #]CPM2002-39
Formation and characterization of ZnS thin films by photochemical deposition method

Ryohei Kobayashi,  Naoya Sato,  Masaya Ichimura,  Eisuke Arai,  

[Date]2002/5/17
[Paper #]CPM2002-40
[OTHERS]

,  

[Date]2002/5/17
[Paper #]