Electronics-Component Parts and Materials(Date:2000/10/13)

Presentation
表紙

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[Date]2000/10/13
[Paper #]
目次

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[Date]2000/10/13
[Paper #]
Growth of high quality SiC bulk single crystal

K. Nakayama,  Y. Miyanagi,  Y. Takata,  H. Shiomi,  S. Nishino,  

[Date]2000/10/13
[Paper #]ED2000-169,CPM2000-108
Photochemical deposition of selenide semiconductors

Atsushi Nakamura,  Kazuki Takeuchi,  Masaya Ichimura,  Eisuke Arai,  

[Date]2000/10/13
[Paper #]ED2000-170,CPM2000-109
Preparation of SnS thin films by Electrochemical deposition

K. Takeuchi,  M. Ichimura,  E. Arai,  

[Date]2000/10/13
[Paper #]ED2000-171,CPM2000-110
Negative Differential Resistance of Trench-type InGaAs Quantum Wire FETs on a (311)A Non-planar InP Substrates

Kazuyuki Matsumoto,  Takeyoshi Sugaya,  Kee-Yong Jang,  Toshiyuki Shimizu,  Mutsuo Ogura,  Kenji Yonei,  Yoshinobu Sugiyama,  Takashi Sekiguchi,  

[Date]2000/10/13
[Paper #]ED2000-172,CPM2000-111
The electrical property of InN grown by RF-MBE

Yoshiki Saito,  Tomohiro Yamaguchi,  Tsutomu Araki,  Yasushi Nanishi,  Nobuaki Teraguchi,  Akira Suzuki,  

[Date]2000/10/13
[Paper #]ED2000-173,CPM2000-112
InN/Si heterojunction fabricated by RF-MBE and its band offset

Takashi Yamashita,  Kouji Suzuki,  Takao Nakano,  Masahiro Yoshimoto,  Junji Saraie,  

[Date]2000/10/13
[Paper #]ED2000-174,CPM2000-113
Growth of undoped ZnO films with high carrier mobilities by radical source molecular beam epitaxy(RS-MBE)

K. Nakahara,  T. Tanabe,  H. Takasu,  P. Fons,  K. Iwata,  A. Yamada,  K. Matsubara,  R. Hunger,  S. Niki,  

[Date]2000/10/13
[Paper #]ED2000-175,CPM2000-114
Suppression of Invading Fluorine Atoms into AIInAs/InGaAs by Phosphidization

Takashi Sugino,  Kensuke Yamamoto,  Norio Fujita,  Shigeru Nakajima,  

[Date]2000/10/13
[Paper #]ED2000-176,CPM2000-115
An InGaP/GaAs Composite Channel FET for High Power Device Application

Kunio Tanaka,  Ken Nakata,  Kenji Otobe,  Shigeru Nakajima,  

[Date]2000/10/13
[Paper #]ED2000-177,CPM2000-116
[OTHERS]

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[Date]2000/10/13
[Paper #]