Electronics-Component Parts and Materials(Date:2000/10/12)

Presentation
表紙

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[Date]2000/10/12
[Paper #]
目次

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[Date]2000/10/12
[Paper #]
Measurement of semiconductor microstructures and analysis of semiconductor properties

Y. Takeda,  

[Date]2000/10/12
[Paper #]ED2000-162,CPM2000-101
Effect of hydrogen in the growth of GaN on SiC substrate by RF-MBE

N. Teraguchi,  A. Suzuki,  T. Araki,  T. Yamaguchi,  H. Kanazawa,  K. Kano,  Y. Nanishi,  

[Date]2000/10/12
[Paper #]ED2000-163,CPM2000-102
Hexagonal GaN on GaAs(001) Grown by MOVPE and Its Application to Formation of GaN/Si Structure by Wafer Bonding

Shuichiro YAMAMOTO,  Mitsuru FUNATO,  Shizuo FUJITA,  Shigeo FUJITA,  

[Date]2000/10/12
[Paper #]ED2000-164,CPM2000-103
Characterization of GaN crystal quality by using sub-micrometer Schottky contacts : correlation between I-V characteristics and dislocations

Kenji Shiojima,  Tetsuya Suemitsu,  Mitsumasa Ogura,  

[Date]2000/10/12
[Paper #]ED2000-165,CPM2000-104
Microscopic Structure and Cathodoluminescence Property of Polycrystalline GaN Grown on ZnO/si and Silica Glass Substrates

T. Araki,  H. Kagatsume,  Y. Nanishi,  

[Date]2000/10/12
[Paper #]ED2000-166,CPM2000-105
Fabrication of AlGaN/GaN HEMTs with buried p-layers

Kenji Shiojima,  Tetsuya Suemitsu,  Naoteru Shigekawa,  

[Date]2000/10/12
[Paper #]ED2000-167,CPM2000-106
Power Performance of AlGaN/GaN HJFETs on Thinned Sapphire Substrates

N. Hayama,  K. Kunihiro,  Y. Okamoto,  K. Kasahara,  T. Nakayama,  Y. Ohno,  K. Matsunaga,  H. Miyamoto,  Y. Ando,  M. Kuzuhara,  

[Date]2000/10/12
[Paper #]ED2000-168,CPM2000-107
[OTHERS]

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[Date]2000/10/12
[Paper #]