Electronics-Component Parts and Materials(Date:1997/10/08)

Presentation
表紙

,  

[Date]1997/10/8
[Paper #]
目次

,  

[Date]1997/10/8
[Paper #]
Growth of Er-doped GaP by OMVPE with TBP and characterization

T. Ito,  T. Kawamoto,  Y. Fujiwara,  Y. Takeda,  

[Date]1997/10/8
[Paper #]CPM97-100-105
Optical Properties of TlInGaP layers grown by gas source MBE

H. Koh,  H. Asahi,  M. Fushida,  K. Yamamoto,  K. Takenaka,  K. Asami,  S. Gonda,  K. Oe,  

[Date]1997/10/8
[Paper #]CPM97-100-105
Chemical beam epitaxial growth and etching of GaAs and InP by using silicon tetraiodide

Shigekazu Izumi,  Norio Hayafuji,  Kazuhiko Sato,  

[Date]1997/10/8
[Paper #]CPM97-100-105
Characterization of composition in InP/InGaAs/InP structure with different thicknesses of InGaAs layers by X-ray CTR scattering

H. Hamamatsu,  N. Matsumoto,  M. Tabuchi,  Y. Takeda,  

[Date]1997/10/8
[Paper #]CPM97-100-105
Fabrication of Two-Dimensional InP Photonic Band-Gap Crystals by Reactive Ion Etching with Inductively Coupled Plasma

M. Hashimoto,  H. Hatate,  Y. Fujiwara,  Y. Takeda,  H. Nakano,  T. Tatsuta,  O. Tsuji,  

[Date]1997/10/8
[Paper #]CPM97-100-105
Fluorine behavior in AlInAs/InGaAs HEMT under bias temperature stresses

Y. Yamamoto,  N. Hayafuji,  K. Sato,  

[Date]1997/10/8
[Paper #]CPM97-100-105
[OTHERS]

,  

[Date]1997/10/8
[Paper #]