Electronics-Component Parts and Materials(Date:1997/08/04)

Presentation
表紙

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[Date]1997/8/4
[Paper #]
目次

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[Date]1997/8/4
[Paper #]
Piezoresistance Effects in p-Type Si and Ge

Y Ohmura,  

[Date]1997/8/4
[Paper #]CPM97-52
Hydrogenation and Passivation of B in Si by Pressurized Water Boiling

K. Abe,  Y. Ohmura,  M. Yamaura,  

[Date]1997/8/4
[Paper #]CPM97-53
Fabrication of silicon dioxide thin film with high purity ozone and its characterization by XPS and SHG

S. Ichimura,  K. Nakamura,  A. Kurokawa,  H. Nonaka,  H. Murakami,  

[Date]1997/8/4
[Paper #]CPM97-54
Epitaxial Growth of CeO_2(110)/Si(100) Structures using Electron Beam assisted Evaporation

Tomoyasu INOUE,  Masataka SATOH,  Yasuhiro YAMAMOTO,  

[Date]1997/8/4
[Paper #]CPM97-55
A study on the preparation condition of single oriented Hf film on n-(001) Si

Satoko Sinkai,  Hideto Yanagisawa,  Midori Kawamura,  Yoshio Abe,  Katsutaka Sasaki,  

[Date]1997/8/4
[Paper #]CPM97-56
Growth of InGaN layer on GaAs(100) substrates using a low temperature InGaN buffer layer

T. Ishihara,  T. Ito,  Y. Ohtuka,  T. Imai,  K. Kuwahara,  M. Sumiya,  Y. Takano,  S. Fuke,  

[Date]1997/8/4
[Paper #]CPM97-57
Radiation effect of low energy focused Ga ion beam to GaAs surface Position control of GaAs micro crystals

Toyohiro Chikyow,  Nobuyuki Koguchi,  

[Date]1997/8/4
[Paper #]CPM97-58
Deposition Mechanism of a-SiO_x:H Thin Films Prepared by PECVD method

Naomichi Sakamoto,  Keiji Maeda,  

[Date]1997/8/4
[Paper #]CPM97-59
Preparation and Assessment of Fluorescent Thin Films with Long Decay Time by a RF Sputtering Technique with Facing Targets

I. Tsutai,  T. Kamimura,  T. Kawakami,  K. Shinbo,  K. Kato,  F. Kaneko,  M. Ohta,  

[Date]1997/8/4
[Paper #]CPM97-60
[OTHERS]

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[Date]1997/8/4
[Paper #]