Electronics-Component Parts and Materials(Date:1997/05/23)

Presentation
表紙

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[Date]1997/5/23
[Paper #]
目次

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[Date]1997/5/23
[Paper #]
Nondestructive evaluation of InGaP/InGaAs HFET structure using spectroscopic ellipsometry and x-ray diffraction

Takumi Nittono,  Gako Araki,  Fumiaki Hyuga,  

[Date]1997/5/23
[Paper #]ED97-26,CPM97-14
Characterization of SiO_2/GaAs Interface Structures using Photo-Modulation Spectroscopy

M. Mochizuki,  T. Saitoh,  

[Date]1997/5/23
[Paper #]ED97-27,CPM97-15
Characterization of Heterointerface Structures by X.Ray CTR Scattering and Interference

Yoshikazu Takeda,  Masao Tabuchi,  Satofumi Ichiki,  Keiji Fujita,  

[Date]1997/5/23
[Paper #]ED97-28,CPM97-16
Non-destructive Inspection of Interfacial Structures in Heterojunctions and Metal/Semiconductor Contacts by X-ray Reflectance Analysis with Sub-nanometer Depth Resolution

Ryo Hattori,  Genshiro Nakamura,  Tadao Sakatani,  

[Date]1997/5/23
[Paper #]ED97-29,CPM97-17
Lifetime Measurement of Epitaxial Wafers by Differentia1 μ-PCD method

H. Hashizume,  F. Ojima,  K. Iba,  N. Yoshida,  H. Takamatsu,  S. Sumie,  

[Date]1997/5/23
[Paper #]ED97-30,CPM97-18
HVPE growth and properties of a high quality GaN bulk single crystal using selective area growth

Takumi Shibata,  Kazumasa Hiramatsu,  Katsunori Yahashi,  Nobuhiko Sawaki,  

[Date]1997/5/23
[Paper #]ED97-31,CPM97-19
Selective growth of GaN on sub-micron pattern by MOVPE

Hidetada Matsushima,  Kazumasa Hiramatsu,  Hisayoshi Hanai,  Nobuhiko Sawaki,  

[Date]1997/5/23
[Paper #]ED97-32,CPM97-20
Low-temperature selective epitaxial growth of Si thin films by ECR plasma CVD

Toshiaki Takada,  Kimihiro Sasaki,  Tomonobu Hata,  

[Date]1997/5/23
[Paper #]ED97-33,CMP97-21
LPE Growth of GaInP alloy on GaP substrate by compositional conversion and its numerical simulation

Atsushi Motogaito,  Masakazu Kimura,  Hironobu Katsuno,  Akira Tanaka,  Tokuzo Sukegawa,  

[Date]1997/5/23
[Paper #]ED97-34,CMP97-22
LPE growth of GaAs-ZnSe-Ga_2Se_3 alloy

Masanori Kaji,  Hironobu Katsuno,  Masakazu Kimura,  Akira Tanaka,  Tokuzo Sukegawa,  

[Date]1997/5/23
[Paper #]ED97-35,CPM97-23
The permeation mechanism of Ga into InSb (II)

Y. Hayakawa,  H. Ohtsu,  M. Masaki,  K. Takahashi,  T. Koyama,  M. Kumagawa,  

[Date]1997/5/23
[Paper #]ED97-36,CPM97-24
Bulk crystal growth of InGaAs ternary mixed semiconductors (II)

T. Ozawa,  Y. Ohnishi,  T. Koyama,  Y. Hayakawa,  M. Kumagawa,  

[Date]1997/5/23
[Paper #]ED97-37,CPM97-25
Epitaxial lateral overgrowth of InGaAs on patterned GaAs substrates by Liquid Phase Phase Eptaxy(II)

S. IIDA,  Y. HAYAKAWA,  S. MINAMI,  T. KOYAMA,  M. KUMAGAWA,  

[Date]1997/5/23
[Paper #]ED97-38,CPM97-26
Formation of sulfide semiconductors by the photochemical deposition

Fumitaka Goto,  Masaya Ichimura,  Eisuke Arai,  

[Date]1997/5/23
[Paper #]ED97-39,CPM97-27
Phase diagrams of Ga solutions of chalcopyrite semiconductors and their THM growth

Katsuyuki Gotoh,  Hideto Miyake,  Koichi Sugiyama,  

[Date]1997/5/23
[Paper #]ED97-40,CPM97-28
[OTHERS]

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[Date]1997/5/23
[Paper #]