IEICE Technical Committee

エレクトロニクス-電子デバイス(開催日：2007/06/18)

タイトル/著者/発表日/資料番号

Investigation of wafer warpage resulted from deep trench isolation in multi-layered SOI

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[発表日]2007/6/18
[資料番号]ED2007-85,SDM2007-90

Application of polyelectrolyte hydrogel in microfluidic chips

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[発表日]2007/6/18
[資料番号]ED2007-86,SDM2007-91

Amperometric glucose biosensor based on Glucose oxidase-Lipid LB film

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[発表日]2007/6/18
[資料番号]ED2007-87,SDM2007-92

日本におけるSiC研究開発の現状と展望(第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))

荒井和雄,

[発表日]2007/6/18
[資料番号]ED2007-88,SDM2007-93

3-D stacked CMOS Inverters using laser crystallized poly-Si film TFTs

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[発表日]2007/6/18
[資料番号]ED2007-89,SDM2007-94

Requirements for Thin Film Transistor Circuits on Plastic

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[発表日]2007/6/18
[資料番号]ED2007-90,SDM2007-95

Study of Ni/Cu Plating for High-Efficiency Crystalline Silicon Solar Cells

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[発表日]2007/6/18
[資料番号]ED2007-91,SDM2007-96

High Performance Bottom-Gated Poly-Si Thin Film Transistors Employing Novel Extended Metal-Pad

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[発表日]2007/6/18
[資料番号]ED2007-92,SDM2007-97

Microscopic mechanism of resistance-switching-memory device based on metal oxides

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[発表日]2007/6/18
[資料番号]ED2007-93,SDM2007-98

Fabrication and Properties of Metal-Ferroelectric-Semiconductor Devices Using Ferroelectric VF_2-TrFE Copolymer Films

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[発表日]2007/6/18
[資料番号]ED2007-94,SDM2007-99

Developing recordable medium with amorphous chalcogenide material for HDDS

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[発表日]2007/6/18
[資料番号]ED2007-95,SDM2007-100

Optical properties of copper in chalcogenide materials used in programmable metallization cell devices

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[発表日]2007/6/18
[資料番号]ED2007-96,SDM2007-101

Analytical Models for Breakdown Voltage and Specific On-Resistance of 6H-SiC Schottky Diodes

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[発表日]2007/6/18
[資料番号]ED2007-97,SDM2007-102

DMOS-based avalanche-mode Power-Rail ESD Clamp for a 0.35μm BCD Process

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[発表日]2007/6/18
[資料番号]ED2007-98,SDM2007-103

Design of a High Performance SC type DC-DC converter Based on Voltage Doubler : A novel structure of push-pull voltage converter based on SC voltage doubler

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[発表日]2007/6/18
[資料番号]ED2007-99,SDM2007-104

Electrical characterization of nano-floating gated silicon-on-insulator memory with In_2O_3 nano-particles embedded in polyimide insulator

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[発表日]2007/6/18
[資料番号]ED2007-100,SDM2007-105

強磁性体シリサイド/Geの低温エピタキシャル成長とスピントランジスタ(第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))

安藤裕一郎, 上田公二, 熊野守, 佐道泰造, 鳴海一雅, 前田佳均, 宮尾正信,

[発表日]2007/6/18
[資料番号]ED2007-101,ED2007-101

Extraction Method of the Interface and Nitride Trap Density in Nitride-Based Charge Trapped Flash Memories Using an Optical Response

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[発表日]2007/6/18
[資料番号]ED2007-102,SDM2007-107

4-bit FinFET SONOS Flash Memory : Optimization of Structure and 3D Numerical Simulation

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[発表日]2007/6/18
[資料番号]ED2007-103,SDM2007-108

アモルファス酸化物半導体TFTとその回路(第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))

雲見日出也,

[発表日]2007/6/18
[資料番号]ED2007-104,SDM2007-109