Electronics-Lasers and Quantum Electronics(Date:2021/11/25)

Presentation
Fabrication and electrical property characterization of AlGaN channel HEMT on AlN template

Ryuichi Mori(Mie Univ.),  Kenjiro Uesugi(Mie Univ.),  Shegeyuki Kuboya(Mie Univ.),  Kanako Shojiki(Mie Univ.),  Hideto Miyake(Mie Univ.),  

[Date]2021-11-26
[Paper #]ED2021-33,CPM2021-67,LQE2021-45
Interface charge engineering in normally-off AlTiO/AlGaN/GaN field-effect transistors

Duong Dai Nguyen(JAIST),  Takehiro Isoda(JAIST),  Yuchen Deng(JAIST),  Toshi-kazu Suzuki(JAIST),  

[Date]2021-11-26
[Paper #]ED2021-30,CPM2021-64,LQE2021-42
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