Electronics-Lasers and Quantum Electronics(Date:2015/11/26)

Presentation
Electrical characteristics of Si/SiC junctions using surface activated bonding

Tomohiro Hayashi(Osaka City Univ.),  Jianbo Liang(Osaka City Univ.),  Manabu Arai(New Japan Radio Co.),  Naoteru Shigekawa(Osaka City Univ.),  

[Date]2015-11-27
[Paper #]ED2015-90,CPM2015-125,LQE2015-122
Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source

P.Pungboon Pansila(Yamagata Univ),  Kensaku Kanomata(Yamagata Univ),  Bashir Ahammad(Yamagata Univ),  Shigeru Kubota(Yamagata Univ),  Fumihiko Hirose(Yamagata Univ),  

[Date]2015-11-27
[Paper #]ED2015-81,CPM2015-116,LQE2015-113
Behavior of Plasma-induced Defects in GaN

Yusuke Koga(TMU),  Seiji Nakamura(TMU),  Tsugunori Okumura(TMU),  

[Date]2015-11-27
[Paper #]
Effects of annealing on the electrical characteristics of GaAs/GaAs junctions

Li Chai(Osaka City Univ.),  Jianbo Liang(Osaka City Univ.),  Naoteru Shigekawa(Osaka City Univ.),  

[Date]2015-11-27
[Paper #]ED2015-89,CPM2015-124,LQE2015-121
Interface analysis of Ti/Al-based ohmic contact on AlGaN/GaN structure grown on GaN substrate

Dariush H. Zadeh(NTT),  Tanabe Shinichi(NTT),  Watanabe Noriyuki(NTT),  Matsuzaki Hideaki(NTT),  

[Date]2015-11-27
[Paper #]
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