Electronics-Lasers and Quantum Electronics(Date:2013/11/21)

Presentation
Development of Highly-Uniform 270-nm Deep-Ultraviolet Light-Emitting Diodes

Takuya MINO,  Hideki HIRAYAMA,  Norimichi NOGUCHI,  Takayoshi TAKANO,  Kenji TSUBAKI,  

[Date]2013/11/21
[Paper #]ED2013-82,CPM2013-141,LQE2013-117
Realization of High Efficiency Deep UV LED by using Transparent p-AlGaN Contact Layer

Noritoshi Maeda,  Hideki Hirayama,  

[Date]2013/11/21
[Paper #]ED2013-83,CPM2013-142,LQE2013-118
Development of AlGaN DUV-LEDs

Masamichi IPPOMMATSU,  Akira HIRANO,  Hiroshi Amano,  Isamu Akasaki,  

[Date]2013/11/21
[Paper #]ED2013-84,CPM2013-143,LQE2013-119
Development of Connected Pillar AlN Buffer for AlGaN deep-UV LEDs

Shiro TOYODA,  Hideki HIRAYAMA,  Norihiko KAMATA,  

[Date]2013/11/21
[Paper #]ED2013-85,CPM2013-144,LQE2013-120
Effects of Fabrication Process on Electrical Properties of InAlN MOS Structures with ALD-Al_2O_3

Masahito Chiba,  Takuma Nakano,  Masamichi Akazawa,  

[Date]2013/11/21
[Paper #]ED2013-86,CPM2013-145,LQE2013-121
Interface properties of n-GaN MIS diodes with laminated ZrO_2/Al_2O_3 films as a gate insulator

Shintaro KODAMA,  Hirokuni TOKUDA,  Masaaki KUZUHARA,  

[Date]2013/11/21
[Paper #]ED2013-87,CPM2013-146,LQE2013-122
Photoelectrode properties of GaN porous structures formed by photo-assisted electrochemical process

Yusuke KUMAZAKI,  Akio WATANABE,  Zenji YATABE,  Taketomo SATO,  

[Date]2013/11/21
[Paper #]ED2013-88,CPM2013-147,LQE2013-123
Evaluation of unwanted radiated emission from GaN-HEMT switching circuit

Toshihide IDE,  Ryousaku KAJI,  Mitsuaki SHIMIZU,  Kenji MIZUTANI,  Hiroaki UENO,  Nobuyuki OTSUKA,  Tetsuzo UEDA,  Tsuyoshi TANAKA,  

[Date]2013/11/21
[Paper #]ED2013-89,CPM2013-148,LQE2013-124
複写される方へ

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Notice for Photocopying

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奥付

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裏表紙

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