Electronics-Lasers and Quantum Electronics(Date:2007/10/04)

Presentation
Morphology and cathodoluminescence properties of InGaN microcrystals

Hisashi KANIE,  Kenichi AKASHI,  

[Date]2007/10/4
[Paper #]ED2007-174,CPM2007-100,LQE2007-75
Fabrication of novel InN/GaN multi-quantum wells consisting of one-monolayer InN wells in GaN matrix for application for new structure light emitting devices

Naoki HASHIMOTO,  Akihiko YUKI,  Hideyuki SAITO,  Xinqiang WANG,  Song-Bek CHE,  Yoshihiro ISHITANI,  Akihiko YOSHIKAWA,  

[Date]2007/10/4
[Paper #]ED2007-175,CPM2007-101,LQE2007-76
Selective MOVPE of InGaN/GaN on a micro-faceted GaN fabricated on an Si substrate

Yoshiki NAKAJIMA,  Yoshio HONDA,  Masahito YAMAGUCHI,  Nobuhiko SAWAKI,  

[Date]2007/10/4
[Paper #]ED2007-176,CPM2007-102,LQE2007-77
Preparation of GaN Crystals by a Reaction of Ga with Li_3N

Akira MABUCHI,  Takayoshi HIRANO,  Takashi SUGIURA,  Hideki MINOURA,  

[Date]2007/10/4
[Paper #]ED2007-177,CPM2007-103,LQE2007-78
Atmospheric-pressure MOVPE growth of In-rich (1～0.5) InAlN

Yoshinori Hochin,  Akihiro Hashimoto,  Akio Yamamoto,  

[Date]2007/10/4
[Paper #]ED2007-178,CPM2007-104,LQE2007-79
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[Date]2007/10/4
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[Date]2007/10/4
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