Electronics-Lasers and Quantum Electronics(Date:2006/09/28)

Presentation
Maskless Epitaxial Lateral Overgrowth of GaN Using Dimethylhydrazine as a Nitrogen Precursor

Jun Shimizu,  Toshiyuki Takizawa,  Tetsuzo Ueda,  

[Date]2006/9/28
[Paper #]ED2006-170,CPM2006-107,LQE2006-74
GaN/InAlN/GaN Heterostructure Barrier Varactor Diode

Nobuhisa TANUMA,  Minoru KUBOTA,  Munekazu TAKANO,  

[Date]2006/9/28
[Paper #]ED2006-171,CPM2006-108,LQE2006-75
Impact of acceptor concentration on electronic properties of n-GaN/p-SiC heterojunction for GaN/SiC heterojunction bipolar transistor

Koichi AMARI,  Jun SUDA,  Tsunenobu KIMOTO,  

[Date]2006/9/28
[Paper #]ED2006-172,CPM2006-109,LQE2006-76
Nitridation of SiC Surface and Characterization by using XPS

Tetsuo YAMAGUCHI,  Yoshiki ISHIDA,  Chen CHEN,  Masataka HAGIHARA,  Rinpei HAYASHIBE,  Tomohiko YAMAKAMI,  Katsuya ABE,  Kiichi KAMIMURA,  

[Date]2006/9/28
[Paper #]ED2006-173,CPM2006-110,LQE2006-77
Position and Size-controlled InN Nano-dot Growth on Patterned Substrates by ECR-MBE

Taihei YAMAGUCHI,  Hiroyuki NAOI,  Tsutomu ARAKI,  Yasushi NANISHI,  

[Date]2006/9/28
[Paper #]ED2006-174,CPM2006-111,LQE2006-78
Effects of damage reduction due to N^+_2 ion on growth of InN film on Si substrate by ECR-MBE method

Tokuo YODO,  Teruya SHIMADA,  Sumito TAGAWA,  Ryo NISHIMOTO,  Shiro HIDAKA,  Keita ISHII,  Hroshi SEGAWA,  Junichi HIRAKAWA,  Yoshiyuki HARADA,  

[Date]2006/9/28
[Paper #]ED2006-175,CPM2006-112,LQE2006-79
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[Date]2006/9/28
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