IEICE Technical Committee

Electronics-Electron Devices(Date:2023/11/30)

Presentation

Fabrication of GaN-based VCSELs with cavity length control including ITO electrode and Nb2O5 spacer

Ruka Watanabe(Meijo Univ.), Kenta Kobayashi(Meijo Univ.), Mitsuki Yanagawa(Meijo Univ.), Tetsuya Takeuchi(Meijo Univ.), Satoshi Kamiyama(Meijo Univ.), Motoaki Iwaya(Meijo Univ.),

[Date]2023-12-01
[Paper #]ED2023-32,CPM2023-74,LQE2023-72

Effects of AlN template polarity on BN grown by MOVPE and high temperature annealing

Yuto Oishi(Mie University), Hideto Miyake(Mie University), Kenjiro Uesugi(Mie University), Toru Akiyama(Mie University), Tomohiro Tamano(Mie University), Shiyu Xiao(Mie University),

[Date]2023-12-01
[Paper #]ED2023-35,CPM2023-77,LQE2023-75

Toward thermal management of optical and electronic devices of III-nitride semiconductor

Yoshihiro Ishitani(Chiba Univ.), Masaya Chizaki(Chiba Univ.), Thee Ei Khaing Shwe(Chiba Univ.), Bojin Lin(Chiba Univ.), Tatsuya Asaji(Chiba Univ.), Bei Ma(Chiba Univ.),

[Date]2023-12-01
[Paper #]ED2023-34,CPM2023-76,LQE2023-74

Consideration of shortening the wavelength of 230nm band far-UVC LED and realization of high output power LED panel

Mitsuhiro Muta(Nippon Tungsten), Hiroyuki Oogami(Nippon Tungsten), Noritoshi Maeda(RIKEN), Yukio Kashima(RIKEN), Eriko Katsuura(RIKEN), Kengo Mouri(Nippon Tungsten), Hirokazu Kawashima(Nippon Tungsten), Taiga Kirihara(RIKEN), Yuuki Nakamura(RIKEN), Sachie Fujikawa(Saitama Univ), Hiroyuki Yaguchi(Saitama Univ), Yasushi Iwaisako(Nippon Tungsten), Hideki Hirayama(RIKEN),

[Date]2023-12-01
[Paper #]ED2023-37,CPM2023-79,LQE2023-77