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Technical Committee on Silicon Device and Materials (SDM)  (2018)

Chair: Hiroshige Hirano (TowerPartners Semiconductor) Vice Chair: Shunichiro Ohmi (Tokyo Inst. of Tech.)
Secretary: Takahiro Mori (AIST), Nobuaki Kobayashi (Nihon Univ.)
Assistant: Taiji Noda (Panasonic), Tomoyuki Suwa (Tohoku Univ.)

Search Results: Keywords 'from:2018-11-08 to:2018-11-08'

[Go to Official SDM Homepage (Japanese)] 
Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Ascending)
 Results 1 - 13 of 13  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2018-11-08
09:20
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] SISPAD 2018 Review
Kenichiro Sonoda (Renesas Electronics) SDM2018-64
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) was held on September 24-26,... [more] SDM2018-64
pp.1-6
SDM 2018-11-08
10:20
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Development and Education of Electron Devices assisted with Computer Simulation
Ken Uchida (Univ. of Tokyo), Takahisa Tanaka (Keio Univ.) SDM2018-65
To develop nano-scale electronic devices, computer simulations in which quantum mechanical effects and detailed band str... [more] SDM2018-65
pp.7-10
SDM 2018-11-08
11:20
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Proposal and device design of tunneling field effect transistor with oxide semiconductor and group-IV semiconductor
Kimihiko Kato, Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) SDM2018-66
A novel bilayer tunneling field effect transistor (TFET) employing an attractive material combination of oxide-semicondu... [more] SDM2018-66
pp.11-16
SDM 2018-11-08
13:30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Device Simulation of Reliability for Advanced Semiconductor Devices
Takamitsu Ishihara, Kazuya Matsuzawa, Takeshi Naito, Sadayuki Yoshitomi (TMC) SDM2018-67
 [more] SDM2018-67
pp.17-22
SDM 2018-11-08
14:30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Development of the evaluation method of the strength of polycrystalline materials based on the order of atom arrangement and its application to the strength evaluation of electroplated copper thin films
Ken Suzuki, Yifan Luo, Hideo Miura (Tohoku Univ.) SDM2018-68
 [more] SDM2018-68
pp.23-26
SDM 2018-11-08
15:40
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] High Resolution CMOS Ion Image Sensors and Its Application for Biomedical Fields
Kazuaki Sawada, YouNa Lee, Yasuyuki Kimura, Tatsuya Iwata, Kazuhiro Takahashi, Toshiaki Hattori (Toyohashi Tech.) SDM2018-69
 [more] SDM2018-69
pp.27-28
SDM 2018-11-09
09:20
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Topography Simulation of Trench-Filling Growth of 4H-SiC
Kazuhiro Mochizuki, Shiyang Ji, Ryoji Kosugi, Yoshiyuki Yonezawa, Hajime Okumura (AIST) SDM2018-70
A topography-simulation model is proposed to simulate chemical-vapor-deposition (CVD) trench filling for 4H-SiC superjun... [more] SDM2018-70
pp.29-34
SDM 2018-11-09
10:20
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Modeling of Electron Transport in 4H-SiC MOS Inversion Layers
Hajime Tanaka, Nobuya Mori (Osaka Univ.) SDM2018-71
We formulated scattering mechanisms in 4H-SiC MOS interfaces and calculated the electron mobility by a Monte Carlo simul... [more] SDM2018-71
pp.35-40
SDM 2018-11-09
11:20
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Analysis of Charge Transport in Amorphous Organic Thin Films
Hironori Kaji (Kyoto Univ.) SDM2018-72
 [more] SDM2018-72
pp.41-42
SDM 2018-11-09
13:20
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Review of Recent Sensor Devices Research based on Semiconductor Technologies -- With Review of SISPAD 2017 Workshop2: "Technologies for Sensor Devices" --
Shigeyasu Uno (Ritsumeikan Univ.) SDM2018-73
An overview of recent sensor device research activities based on the semiconductor technologies will be given with a rev... [more] SDM2018-73
pp.43-46
SDM 2018-11-09
14:20
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Device Simulation of Field-Effect Transistor Using Ferroelectric Negative Capacitance
Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Hiroyuki Ota, Shinji Migita, Hidehiro Asai (AIST) SDM2018-74
We consider the method to simulate negative-capacitance field-effect transistors (NC FETs) harnessing negative capacitan... [more] SDM2018-74
pp.47-52
SDM 2018-11-09
15:30
Tokyo Kikai-Shinko-Kaikan Bldg. Study of new stacked type logic circuit scheme with fabrication technology of 3D flash memory.
Fumiya Suzuki, Sigeyoshi Watanabe (Shonan Inst. of Tech) SDM2018-75
 [more] SDM2018-75
pp.53-57
SDM 2018-11-09
15:55
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Characteristics and Ultralow Voltage Rectification Experiment on MOS Diode connection using Super Steep SS PN-Body Tied SOI-FET
Shun Momose, Jiro Ida, Takuya Yamada, Takayuki Mori, Kenji Itoh (KIT), Koichiro Ishibashi (UEC), Yasuo Arai (KEK) SDM2018-76
In order to utilize the Radio Frequency (RF) signal power existing in the living environment, a RF rectifier that realiz... [more] SDM2018-76
pp.59-64
 Results 1 - 13 of 13  /   
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