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Technical Committee on Microwaves (MW)  (2016)

Chair: Yoshinori Kogami (Utsunomiya Univ.)
Vice Chair: Tadashi Kawai (Univ. of Hyogo), Kensuke Okubo (Okayama Prefectural Univ.), Shintaro Shinjo (Mitsubishi Electric)
Secretary: Masaru Sato (Fujitsu Labs.), Masataka Ohira (Saitama Univ.)
Assistant: Kyoya Takano (Tokyo Univ. of Science), Naoki Hasegawa (Softbank)

Search Results: Keywords 'from:2017-01-26 to:2017-01-26'

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Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Ascending)
 Results 1 - 16 of 16  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
MW, ED 2017-01-26
14:00
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] GaN Power Transistors on Si Substrates for Switching and High-Frequency Applications
Tetsuzo Ueda, Yasuhiro Uemoto, Hiroyuki Sakai, Tsuyoshi Tanaka (Panasonic), Daisuke Ueda (Kyoto Insutitute of Tech.) ED2016-96 MW2016-172
GaN transistors have been widely investigated for power deices to be used in various power switching systems. In additio... [more] ED2016-96 MW2016-172
pp.1-5
MW, ED 2017-01-26
14:25
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] Commercialization of GaN-HEMT for High Frequency Application
Yasunori Tateno (Sumitomo Electric) ED2016-97 MW2016-173
 [more] ED2016-97 MW2016-173
pp.7-12
MW, ED 2017-01-26
14:50
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] Current Status of Millimeter-Wave GaN-HEMTs
Kozo Makiyama, Yoshitaka Niida, Shiro, Toshihiro Ohki, Naoya Okamoto, Yuichi Minoura, Masaru Sato, Youichi Kamata, Kazukiyo Jpshin, Keiji Watanabe (Fujitsu), Yasuyuki Miyamoto (Tokyo Tech.) ED2016-98 MW2016-174
 [more] ED2016-98 MW2016-174
pp.13-16
MW, ED 2017-01-26
15:25
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] Towards Realization of GaN Vertical Power Devices
Jun Suda (Kyoto Univ.) ED2016-99 MW2016-175
GaN vertical power devices have attracted much attention as next-generation high-voltage low-on-resistance power devices... [more] ED2016-99 MW2016-175
pp.17-18
MW, ED 2017-01-26
15:50
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] Current status and problems of epitaxial wafers for GaN electronic devices
Yohei Otoki (SCIOCS) ED2016-100 MW2016-176
GaN electronic devices have been in the practical stage mainly for high frequency applications. In epitaxial growth, the... [more] ED2016-100 MW2016-176
pp.19-22
MW, ED 2017-01-26
16:15
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] Characterization of Metal/GaN Schottky Contacts -- Review from the Early Days --
Kenji Shiojima (Univ. of Fukui) ED2016-101 MW2016-177
We report our experimental results on GaN Schottky contacts in conjunction with a review of the development of GaN elect... [more] ED2016-101 MW2016-177
pp.23-28
MW, ED 2017-01-27
09:30
Tokyo Kikai-Shinko-Kaikan Bldg. Improvement in Noise Characteristics of Zero-bias GaAsSb-based Backward Diodes
Tsuyoshi Takahashi, Masaru Sato, Shoichi Shiba, Yasuhiro Nakasha, Naoki Hara, Taisuke Iwai, Naoya Okamoto, Keiji Watanabe (Fujitsu Labs.) ED2016-102 MW2016-178
Noise characteristics of zero-bias backward diodes for terahertz detectors were improved by using a p+-GaAs0.51Sb0.49/n-... [more] ED2016-102 MW2016-178
pp.29-33
MW, ED 2017-01-27
09:55
Tokyo Kikai-Shinko-Kaikan Bldg. Dependence of Electron Mobility on Deposition Temperature and H2 Annealing in MOSFETs with HfO2/Al2O3/InGaAs Gate Stacks
Kazuto Ohsawa, Shinji Noguchi, Seiko Netsu, Nobukazu Kise, Yasuyuki Miyamoto (Tokyo Tech) ED2016-103 MW2016-179
III–V compound semiconductors are promising materials for future n-type MOSFET channels because of their high elec... [more] ED2016-103 MW2016-179
pp.35-40
MW, ED 2017-01-27
10:30
Tokyo Kikai-Shinko-Kaikan Bldg. Design of Filtering Antenna with Transmission Zeros Using Cross Coupling Between Antenna and Resonator
Toshiki Miyazaki, Masataka Ohira, Zhewag Ma, Xiaolong Wang (Saitama Univ.) ED2016-104 MW2016-180
The generation of transmission zeros (TZs) at stopbands is indispensable for filtering antennas to obtain a sharp passba... [more] ED2016-104 MW2016-180
pp.41-46
MW, ED 2017-01-27
10:55
Tokyo Kikai-Shinko-Kaikan Bldg. Improved Design Method of Dual-Band Bandpass Filters Using Microstrip Composite Resonators
Ru Zhang, Zhewang Ma, Masataka Ohira, Xiaolong Wan (Saitama Univ.), Chun-Ping Chen, Tetsuo Anada (Kanagawa Univ.) ED2016-105 MW2016-181
 [more] ED2016-105 MW2016-181
pp.47-52
MW, ED 2017-01-27
11:20
Tokyo Kikai-Shinko-Kaikan Bldg. An X-band Low Loss/High Power SPST Switch Using GaN on Si
Ryota Komaru, Masatake Hangai, Kazuhiko Nakahara, Hiroyuki Okazaki, Koji Yamanaka (Mitsubishi Electric) ED2016-106 MW2016-182
An X-band low loss and high power switch using GaN on Si has been developed. The high power switch utilized asymmetric c... [more] ED2016-106 MW2016-182
pp.53-56
MW, ED 2017-01-27
13:00
Tokyo Kikai-Shinko-Kaikan Bldg. Physical model of GaN HEMT on Si including temperature dependence of RF leakage current in substrates
Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka (Mitsubishi Electric corp.), Toshiyuki Oishi (Saga univ.) ED2016-107 MW2016-183
 [more] ED2016-107 MW2016-183
pp.57-62
MW, ED 2017-01-27
13:25
Tokyo Kikai-Shinko-Kaikan Bldg. Study on dependence of passivation stress for electrical characteristics of AlGaN/GaN HEMTs by TCAD simulation
Toshiyuki Oishi (Saga univ.), Yutaro Yamaguchi, Koji Yamanaka (Mitsubishi Electric corp.) ED2016-108 MW2016-184
Effects of passivation residual stress on electrical characteristics for GaN HEMTs have been studied by using a TCAD sim... [more] ED2016-108 MW2016-184
pp.63-68
MW, ED 2017-01-27
14:00
Tokyo Kikai-Shinko-Kaikan Bldg. A compact 8.5-10.5 GHz GaN-on-Si MMIC Amplifier for a low cost transmitter
Jun Kamioka, Masatake Hangai, Kazuhiko Nakahara (Mitsubishi Electric Corp.), Hiroyuki Okazaki (Mitsubishi Electric Corporation), Koji Yamanaka (Mitsubishi Electric Corp.) ED2016-109 MW2016-185
 [more] ED2016-109 MW2016-185
pp.69-73
MW, ED 2017-01-27
14:25
Tokyo Kikai-Shinko-Kaikan Bldg. C-Ku band over 10 W Broadband Power Amplifier using Broadband Series-Shunt Inductor Matching Network
Eigo Kuwata, Atsuo Sugimoto, Hidetoshi Koyama, Yoshitaka Kamo, Ryota Komaru, Koji Yamanaka (Mitsubishi Electric) ED2016-110 MW2016-186
This paper reports on a Gallium Nitride High Electron Mobility Transistor (GaN HEMT) Monolithic Microwave Integrated Cir... [more] ED2016-110 MW2016-186
pp.75-79
MW, ED 2017-01-27
14:50
Tokyo Kikai-Shinko-Kaikan Bldg. 30W Output/60% PAE GaN Power Amplifier at X-band 8% Relative Bandwidth Utilizing 0.15um GaN HEMT Technology
Yoshifumi Kawamura, Masatake Hangai, Tomohiro Mizutani, Kenichi Tomiyama, Koji Yamanaka (Mitsubishi Electric) ED2016-111 MW2016-187
In this paper, a 30W-class X-band high-efficiency Internally Matched FET (IMFET) implemented in a 0.15 um GaN HEMT proce... [more] ED2016-111 MW2016-187
pp.81-84
 Results 1 - 16 of 16  /   
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