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Technical Committee on Lasers and Quantum Electronics (LQE)  (2014)

Chair: Hiroshi Yasaka (Tohoku Univ.) Vice Chair: Toshitada Umezawa (NICT)
Secretary: Masaya Nagai (Osaka Univ.), Toru Segawa (NTT)
Assistant: Kazuue Fujita (Hamamatsu), Nobuhiko Nishiyama (Tokyo Inst. of Tech.)

Search Results: Keywords 'from:2014-11-27 to:2014-11-27'

[Go to Official LQE Homepage (Japanese)] 
Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Ascending)
 Results 1 - 20 of 27  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, ED, CPM 2014-11-27
10:35
Osaka   AlN Single Crystal Growth by means of Sublimation method
Yosuke Iwasaki, Shunro Nagata, Hidetoshi Akiyama, Keiichiro Nakamura (JFE MINERAL) ED2014-73 CPM2014-130 LQE2014-101
Aluminum Nitride (AlN) is a promising substrate material for Al-rich III-Nitride devices for use as deep ultraviolet lig... [more] ED2014-73 CPM2014-130 LQE2014-101
pp.1-4
LQE, ED, CPM 2014-11-27
11:00
Osaka   Crystal growth of GaN-based nitride semiconductors on lattice-matched ScAlMgO4
Takuya Ozaki, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2014-74 CPM2014-131 LQE2014-102
Metalorganic vapor phase epitaxy (MOVPE) of GaN-based materials on ScAlMgO4 (SCAM) substrates is demonstrated. SCAM has ... [more] ED2014-74 CPM2014-131 LQE2014-102
pp.5-8
LQE, ED, CPM 2014-11-27
11:25
Osaka   Critical thickness for phase separation in MOVPE-grown thick InGaN
Kazuki Kodama, Tanvir Md Hasan, Hiroyuki Nomura (Univ. of Fukui), Naoteru Shigekawa (Osaka City Univ.), Akio Yamamoto, Masaaki Kuzuhara (Univ. of Fukui) ED2014-75 CPM2014-132 LQE2014-103
This paper reports phase separation in thick (~1 μm) MOVPE InxGa1-xN (x = 0.2~0.4) films grown by MOVPE at 570~750℃ on A... [more] ED2014-75 CPM2014-132 LQE2014-103
pp.9-14
LQE, ED, CPM 2014-11-27
11:50
Osaka   Effects of relaxation layer of AlGaN multiple quantum wells by LP-MOVPE
Kazuhiro Nakahama (Mie Univ.), Fumitsugu Fukuyo (HAMA PHOTO), Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Harumasa Yoshida, Yuji Kobayashi (HAMA PHOTO) ED2014-76 CPM2014-133 LQE2014-104
 [more] ED2014-76 CPM2014-133 LQE2014-104
pp.15-18
LQE, ED, CPM 2014-11-27
13:15
Osaka   Emission characteristics of InGaN-MQW structures on m-plane GaN substrates
Kaori Kurihara, Satoru Nagao (Mitsubishi Chemical), Atsushi Yamaguchi (Kanazawa Inst. of Tech.) ED2014-77 CPM2014-134 LQE2014-105
We have investigated the optical characteristics of InGaN QWs on m-plane GaN substrates in order to understand the reaso... [more] ED2014-77 CPM2014-134 LQE2014-105
pp.19-22
LQE, ED, CPM 2014-11-27
13:40
Osaka   Optical Polarization Properties in non-c-oriented-InGaN Quantum Wells
Shigeta Sakai, Atsushi Yamaguchi (Kanazawa Inst. of Tech.), Kaori Kurihara, Satoru Nagao (Mitsubishi Chemical) ED2014-78 CPM2014-135 LQE2014-106
Optical polarization properties are very important factors for structural design of optoelectronic device using non- c-o... [more] ED2014-78 CPM2014-135 LQE2014-106
pp.23-26
LQE, ED, CPM 2014-11-27
14:05
Osaka   The micro machining process technology of nano imprint and dry etching to improve the efficiency of nitride LED
Yukio Kashima, Eriko Matsuura (Marubun), Satoshi Shimatani (TOK), Mitsunori Kokubo, Takaharu Tashiro, Takafumi Ookawa (Toshiba Machine), Ryuichiro Kamimura, Yamato Osada (ULVAC), Sachie Fujikawa, Hideki Hirayama (RIKEN) ED2014-79 CPM2014-136 LQE2014-107
We fabricated the photonic crystal in nitride LED and improved the light extraction efficiency. We also introduce the mi... [more] ED2014-79 CPM2014-136 LQE2014-107
pp.27-32
LQE, ED, CPM 2014-11-27
14:30
Osaka   Two-Dimensional Strain Mapping of GaN Templates Fabricated by Nano-Channel FIELO Method Using Nanoimprint Lithography
Masanori Nambu, Atsushi Yamaguchi (Kanazawa Inst. of Tech.), Hiroki Goto, Haruo Sunakawa, Toshiharu Matsueda (Furukawa Co. Ltd.), Akiko Okada (Waseda Univ.), Hidetoshi Shinohara, Hiroshi Goto (Toshiba Machine Co. Ltd.), Jun Mizuno (Waseda Univ.), Akira Usui (Furukawa Co. Ltd.) ED2014-80 CPM2014-137 LQE2014-108
The efficiency droop phenomenon is a big problem for high-brightness white LEDs. It has been pointed out that the proble... [more] ED2014-80 CPM2014-137 LQE2014-108
pp.33-38
LQE, ED, CPM 2014-11-27
14:55
Osaka   Fabrication of high-quality AlN buffer layer for deep-UV LEDs grown on wet chemical etched patterned sapphire substrate
Yuya Kanazawa, Shiro Toyoda, Issei Ohshima (Saitama Univ./RIKEN), Norihiko Kamata (Saitama Univ.), Yukio Kashima (Marubun), Eriko Matsuura (MARUBUN), Satoshi Shimatani (TOK), Mitsunori Kokubo, Takaharu Tashiro (TOSHIBA MACHINE), Takashi Ohkawa, Ryuichiro Kamimura, Yamato Osada (ULVAC), Hideki Hirayama (RIKEN) ED2014-81 CPM2014-138 LQE2014-109
 [more] ED2014-81 CPM2014-138 LQE2014-109
pp.39-44
LQE, ED, CPM 2014-11-27
15:35
Osaka   Hardness and Young's modulus of InN
Yasushi Ohkubo, Momoto Deura (Tohoku Univ.), Yuki Tokumoto (Univ. Tokyo), Kentaro Kutsukake, Yutaka Ohno, Ichiro Yonenaga (Tohoku Univ.) ED2014-82 CPM2014-139 LQE2014-110
InN thin films of 0.5~4 μm thickness grown by plasma-assisted MBE method were investigated on the mechanical properties ... [more] ED2014-82 CPM2014-139 LQE2014-110
pp.45-48
LQE, ED, CPM 2014-11-27
16:00
Osaka   Crystal Growth and Magnetic Property of Cr2O3 Thin Films on LiNbO3 Substrates
Takumi Nakamura, Yutaro Hayashi, Takashi Sumida, Kosuke Hashimoto, Tomoko Nagata, Hiroshi Yamamoto, Nobuyuki Iwata (Nihon Univ.)
 [more]
LQE, ED, CPM 2014-11-27
16:25
Osaka   Relationship between First-Principles Studies and Experimental Results of [(CaFeO3)m/(LaFeO3)n] Superlattices about an Electric and Magnetic Structures and Properties.
Takahiro Oikawa, Yuta Watabe, Takaaki Inaba, Keisuke Oshima, Huaping Song, Tomoko Nagata, Hiroshi Yamamoto, Nobuyuki Iwata (Nihon Univ.) ED2014-83 CPM2014-140 LQE2014-111
We investigate the crystal structure of CaFeO3, LaFeO3 thin films and the DOS calculation results of [(CaFeO3)1/(LaFeO3)... [more] ED2014-83 CPM2014-140 LQE2014-111
pp.49-53
LQE, ED, CPM 2014-11-27
16:50
Osaka   Chiral Structure and Electric Property of Single-Walled Carbon Nanotubes Grown with Free Electron Laser Irradiation
Yusaku Tsuda, Keisuke Yoshida, Daiki Kawaguchi, Tomoko Nagata, Nobuyuki Iwata, Hiroshi Yamamoto (Nihon Univ.)
 [more]
LQE, ED, CPM 2014-11-28
09:30
Osaka   Realization of Lasing Action of GaN/AlGaN based Terahertz Quantum Cascade Laser using Two Quantum Well Structure
Wataru Terashima, Hideki Hirayama (RIKEN) ED2014-85 CPM2014-142 LQE2014-113
III-Nitride semiconductors having huge longitudinal optical phonon energies are promising as materials to solve a proble... [more] ED2014-85 CPM2014-142 LQE2014-113
pp.59-62
LQE, ED, CPM 2014-11-28
09:55
Osaka   MOCVD Growth of GaN-based THz Quantum Cascade Laser and Observation of Emission at 7 THz
Shiro Toyoda (RIKEN/Saitama Univ.), Wataru Terashima (RIKEN), Norihiko Kamata (Saitama Univ.), Hideki Hirayama (RIKEN/Saitama Univ.) ED2014-84 CPM2014-141 LQE2014-112
Terahertz quantum cascade lasers (THz-QCLs) are attracting attention for use as a lot of applications, because they are ... [more] ED2014-84 CPM2014-141 LQE2014-112
pp.55-58
LQE, ED, CPM 2014-11-28
10:20
Osaka   A hybrid integrated light source on Si platform using a quantum dot laser for high temperature operation
Nobuaki Hatori, Takanori Shimizu (PETRA), Makoto Okano (National Institute of Advanced Industrial Science AIST), Masashige Ishizaka, Tsuyoshi Yamamoto, Yutaka Urino (PETRA), Masahiko Mori (National Institute of Advanced Industrial Science AIST), Takahiro Nakamura (PETRA), Yasuhiko Arakawa (Univ. of Tokyo) ED2014-86 CPM2014-143 LQE2014-114
 [more] ED2014-86 CPM2014-143 LQE2014-114
pp.63-68
LQE, ED, CPM 2014-11-28
11:00
Osaka   Linearly polarized nitride-based light emitting diode with multilayer subwavelength grating
Yuusuke Takashima, Ryo Shimizu, Masanobu Haraguchi, Yoshiki Naoi (Univ. of Tokushima) ED2014-87 CPM2014-144 LQE2014-115
We investigated the polarization characteristics of UV-LED with multilayer subwavelength grating. The grating structure ... [more] ED2014-87 CPM2014-144 LQE2014-115
pp.69-72
LQE, ED, CPM 2014-11-28
11:25
Osaka   Operation of deep UV LED using superlattice p-AlGaN hole-spreading contact layer
Noritoshi Maeda, Masafumi Jo, Hideki Hirayama (RIKEN) ED2014-88 CPM2014-145 LQE2014-116
P-GaN free structure and highly-reflective p-type electrode are required for realizing high light-extraction efficiency ... [more] ED2014-88 CPM2014-145 LQE2014-116
pp.73-76
LQE, ED, CPM 2014-11-28
11:50
Osaka   Deep UV light-emitting diodes containing a p-AlGaN contacting layer with high Al content
Masafumi Jo, Noritoshi Maeda, Hideki Hirayama (RIKEN) ED2014-89 CPM2014-146 LQE2014-117
AlGaN light-emitting diodes (LEDs) have been extensively studied for highly efficient light sources in deep ultraviolet ... [more] ED2014-89 CPM2014-146 LQE2014-117
pp.77-80
LQE, ED, CPM 2014-11-28
13:15
Osaka   Suppression in Current Collapse of Millimeter-Wave GaN-HEMT Using MSQ-Based Low-k Insulator Films
Shiro Ozaki, Kozo Makiyama, Toshihiro Ohki, Yoichi Kamada, Masaru Sato, Yoshitaka Niida, Naoya Okamoto, Satoshi Masuda, Kazukiyo Joshin (Fujitsu) ED2014-90 CPM2014-147 LQE2014-118
We have investigated the effect of moisture on current collapse of GaN high electron mobility transistor (GaN-HEMT) when... [more] ED2014-90 CPM2014-147 LQE2014-118
pp.81-84
 Results 1 - 20 of 27  /  [Next]  
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