| IEICE Technical Committee Submission System Conference Schedule |
Online Proceedings [Sign in] Tech. Rep. Archives |
All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, SDM, CPM | 2024-05-24 16:15 |
Hokkaido | (Primary: On-site, Secondary: Online) |
Performance Analysis of Wide Bandgap Semiconductor SBD for Microwave Power Transmission Yasuo Ohno, Hiroko Itoh, Tomomi Hiraoka (Laser Systems), Masataka Higashiwaki (Osaka Metropolitan Univ.) |
(To be available after the conference date) [more] | |
| SDM | 2021-11-12 10:30 |
Online | Online | [Invited Talk]
Full band Monte Carlo analysis of the uniaxial stress impact on 4H-SiC high energy transport Tomoya Nishimura, Katsumi Eikyu, Kenichiro Sonoda, Tamotsu Ogata (Renesas Electronics)  SDM2021-61 |
SiC is expected to be the next-generation semiconductor material especially for power devices, and some have been put in... [more] | SDM2021-61 pp.43-46 |
| CPM | 2019-11-08 10:50 |
Fukui | Fukui univ. | [Invited Talk]
Mapping of metal/semiconductor and semiconductor/semiconductor interfaces using scanning internal photoemission microscopy Kenji Shiojima (Univ. of Fukui) CPM2019-51 |
Scanning internal photoemission spectroscopy has been developed to map the electrical characteristics of metal/semicondu... [more] | CPM2019-51 pp.35-38 |
| SDM | 2016-11-11 11:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Simulation Studies Contributing to Development of Wide-Bandgap Power Semiconductor Devices Kazuhiro Mochizuki (AIST) SDM2016-85 |
Studies contributing to wide-bandgap semiconductor (e.g., 4H-SiC and 2H-GaN) power devices, using commercial process and... [more] | SDM2016-85 pp.37-42 |
| ED | 2016-01-20 13:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
Estimation of RF-DC conversion efficiency of microwave power Shottky barrier diodes for rectenna by small equivalent circuit model
-- Comparison of semiconductor materials -- Toshiyuki Oishi, Makoto Kasu (Saga Univ.) ED2015-116 |
RF-DC conversion efficiencies of rectenna using conventional and wide bandgap semiconductors are estimated by small sign... [more] | ED2015-116 pp.25-29 |
| CPM, ED, SDM | 2014-05-29 15:55 |
Aichi | Electrical characterization of corundum-structured oxides for device applications Kentaro Kaneko, Norihiro Suzuki, Sam-Dong Lee, Masashi Kitajima, Kazuaki Akaiwa, Shizuo Fujita (Kyoto Univ.) |
We investigated electrical properties of α-In2O3 thin films fabricated on c-cut sapphire substrates by a mist chemical v... [more] | ||
| ED | 2008-06-13 14:15 |
Ishikawa | Kanazawa University | Characterization of N-doped AlSiO film for wide bandgap semiconductors Naoyoshi Komatsu, Hirotaka Tanaka, Hidemitsu Aoki, Keiko Matsunouchi, Chiharu Kimura (Osaka Univ.), Yukihiko Okumura (Maizuru National Col. of Tech.), Takashi Sugino (Osaka Univ.) ED2008-25 |
A gate insulator film with a wide bandgap and a high dielectric constant is required to achieve high power field effect ... [more] | ED2008-25 pp.17-22 |
| SDM, R, ED | 2007-11-16 13:00 |
Osaka | Electrical Characterization of Yttriumaluminate(YAlO)Film Keiko Matsunouchi, Naoyoshi Komatsu, Chiharu Kimura, Hidemitsu Aoki, Takashi Sugino (Osaka Univ.) R2007-46 ED2007-179 SDM2007-214 |
To achieve high power FET using wide bandgap semiconductor, a gate insulator film with a wide bandgap and a high dielect... [more] | R2007-46 ED2007-179 SDM2007-214 pp.1-6 |
|
[Return to Top Page]