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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2023-11-09
11:20		 Tokyo
(Primary: On-site, Secondary: Online)		 [Invited Talk] Current Status and Future Prospects of GaN Vertical Power Devices on GaN substrates
Jun Suda (Nagoya Univ.) SDM2023-63		 Recent progress of GaN vertical power devices which fabricated on n-type GaN bulk substates. Fundamental properties of ... [more] SDM2023-63
p.7
SDM 2018-01-30
11:30		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Proposal and demonstration of oxide-semiconductor/(Si, SiGe, Ge) bilayer tunneling field effect transistor with type-II energy band alignment
Kimihiko Kato, Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2017-92		 A novel bilayer tunneling field effect transistor (TFET) employing an attractive material combination of oxide-semicondu... [more] SDM2017-92
pp.5-8
SDM 2016-01-28
13:30		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Van der Waals Junctions of Layered 2D Materials for Functional Devices
Tomoki Machida, Rai Moritani, Yohta Sata, Takehiro Yamaguchi, Miho Arai, Naoto Yabuki, Sei Morikawa, Satoru Masubuchi (Univ. of Tokyo), Keiji Ueno (Saitama Univ.) SDM2015-123		 Recent advances in transfer techniques of atomic layers have enabled one to fabricate van der Waals junctions of two-dim... [more] SDM2015-123
pp.13-16
SDM, ED 2009-06-25
12:45		 Overseas Haeundae Grand Hotel, Busan, Korea Study on Quantum Electro-Dynamics in Vertical MOSFET
Masakazu Muraguchi, Tetsuo Endoh (Tohoku Univ./JST-CREST) ED2009-89 SDM2009-84		 We have studied transmission property of electron in vertical MOSFET (V-MOSFET) from the viewpoint of quantum electro-dy... [more] ED2009-89 SDM2009-84
pp.169-172
 Results 1 - 4 of 4  /   
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