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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 5 of 5  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2018-01-30
15:30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Sub-nm EOT Ferroelectric HfO2 on p+Ge with Highly Reliable Field Cycling Properties
Xuan Tian, Lun Xu, Shigehisa Shibayama, Tomonori Nishimura, Takeaki Yajima (Univ. of Tokyo), Shinji Migita (AIST), Akira Toriumi (Univ. of Tokyo) SDM2017-96
5-nm-thick ferroelectric Y-doped HfO2 was intensively studied. The thickness dependence of ferroelectric properties indi... [more] SDM2017-96
pp.21-24
MRIS, ITE-MMS 2016-12-09
10:30
Ehime Ehime Univ. Sputter-deposition of inclined anisotropy film with Co/Pt atomic layer stacking
Naoki Honda (Tohoku Inst. Tech.), Shintaro Hinata, Shin Saito (Tohoku Univ.) MR2016-38
Deposition of weakly inclined anisotropy film for bit-patterned media was studied. First, deposition of Co/Pt layer stac... [more] MR2016-38
pp.51-56
EST, MWP, OPE, MW, EMT, IEE-EMT [detail] 2013-07-18
09:55
Hokkaido Wakkanai Synthesis Cultural Center Substrate Thickness Dependence on Insertion Loss of Porous Post-wall Waveguide
Tatsuya Suzuki, Ryosuke Suga, Osamu Hashimoto (Aoyama Gakuin Univ.) MW2013-49 OPE2013-18 EST2013-13 MWP2013-8
In this report, the transmission and leakage loss of a porous post-wall waveguide depending on the substrate thickness w... [more] MW2013-49 OPE2013-18 EST2013-13 MWP2013-8
pp.7-11
SDM, OME 2010-04-23
11:00
Okinawa Okinawa-Ken-Seinen-Kaikan Bldg. Film property and carrier transport mechanism of pentacene organic thin-film transistor
Akira Heya, Hiroshi Hasegawa, Naoto Matsuo (Univ.Hyogo) SDM2010-3 OME2010-3
Carrier transport in organic thin-film transistors (OTFTs) was investigated by using pentacene OTFT and sample for verti... [more] SDM2010-3 OME2010-3
pp.9-12
ITE-MMS, MRIS 2009-11-13
15:15
Tokyo Waseda Univ. [Invited Talk] Reduction of Read Gap Length by Thin Exchange Bias Layer
Chiharu Mitsumata (Hitachi Metals), Akimasa Sakuma, Kazuaki Fukamichi (Tohoku Univ.) MR2009-33
For the material design of thin exchange bias layer to reduce the read gap length, the exchange bias between the ferroma... [more] MR2009-33
pp.25-30
 Results 1 - 5 of 5  /   
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