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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2018-01-30 15:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Sub-nm EOT Ferroelectric HfO2 on p+Ge with Highly Reliable Field Cycling Properties Xuan Tian, Lun Xu, Shigehisa Shibayama, Tomonori Nishimura, Takeaki Yajima (Univ. of Tokyo), Shinji Migita (AIST), Akira Toriumi (Univ. of Tokyo) SDM2017-96 |
5-nm-thick ferroelectric Y-doped HfO2 was intensively studied. The thickness dependence of ferroelectric properties indi... [more] |
SDM2017-96 pp.21-24 |
MRIS, ITE-MMS |
2016-12-09 10:30 |
Ehime |
Ehime Univ. |
Sputter-deposition of inclined anisotropy film with Co/Pt atomic layer stacking Naoki Honda (Tohoku Inst. Tech.), Shintaro Hinata, Shin Saito (Tohoku Univ.) MR2016-38 |
Deposition of weakly inclined anisotropy film for bit-patterned media was studied. First, deposition of Co/Pt layer stac... [more] |
MR2016-38 pp.51-56 |
EST, MWP, OPE, MW, EMT, IEE-EMT [detail] |
2013-07-18 09:55 |
Hokkaido |
Wakkanai Synthesis Cultural Center |
Substrate Thickness Dependence on Insertion Loss of Porous Post-wall Waveguide Tatsuya Suzuki, Ryosuke Suga, Osamu Hashimoto (Aoyama Gakuin Univ.) MW2013-49 OPE2013-18 EST2013-13 MWP2013-8 |
In this report, the transmission and leakage loss of a porous post-wall waveguide depending on the substrate thickness w... [more] |
MW2013-49 OPE2013-18 EST2013-13 MWP2013-8 pp.7-11 |
SDM, OME |
2010-04-23 11:00 |
Okinawa |
Okinawa-Ken-Seinen-Kaikan Bldg. |
Film property and carrier transport mechanism of pentacene organic thin-film transistor Akira Heya, Hiroshi Hasegawa, Naoto Matsuo (Univ.Hyogo) SDM2010-3 OME2010-3 |
Carrier transport in organic thin-film transistors (OTFTs) was investigated by using pentacene OTFT and sample for verti... [more] |
SDM2010-3 OME2010-3 pp.9-12 |
ITE-MMS, MRIS |
2009-11-13 15:15 |
Tokyo |
Waseda Univ. |
[Invited Talk]
Reduction of Read Gap Length by Thin Exchange Bias Layer Chiharu Mitsumata (Hitachi Metals), Akimasa Sakuma, Kazuaki Fukamichi (Tohoku Univ.) MR2009-33 |
For the material design of thin exchange bias layer to reduce the read gap length, the exchange bias between the ferroma... [more] |
MR2009-33 pp.25-30 |
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