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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| OME | 2022-12-19 16:10 |
Tokyo | Katsushika Campus | Conductivity and thermal stability of F--doped B-type carbonated apatite-based solid electrolyte Rei Akamatsu, Yumi Tanaka (Tokyo Univ. of Science)  OME2022-49 |
Motivated by the practical application of FCA ((Ca10-x Na2x/3)[(PO4)6-x(CO3)x][(OH)2-(x/3)-y F y]) as a solid electrolyt... [more] | OME2022-49 pp.30-32 |
| CPM, ED, LQE | 2022-11-24 13:45 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Fabrication of MgSnO thin film using sol-gel method for SnS/MgSnO thin film solar cell Kengo Inagaki, Yasushi Takano, Keito Shioda (Shizuoka Univ.) ED2022-32 CPM2022-57 LQE2022-65 |
We prepared magnesium tin oxide (referred to as MTO) thin film on FTO (fluorine doped tin oxide) by the sol-gel method. ... [more] | ED2022-32 CPM2022-57 LQE2022-65 pp.40-44 |
| CPM | 2022-03-01 15:40 |
Online | Online | Thin film solar cell using SnS absorber layer and MgSnO buffer layer Kengo Inagaki, Yasushi Takano, Satoshi Mizuno (Shizuoka Univ.) CPM2021-80 |
We prepared a magnesium tin oxide (hereinafter referred to as MTO) thin film on the FTO (fluorine doped tin oxide) by th... [more] | CPM2021-80 pp.31-35 |
| SCE | 2022-01-21 15:30 |
Online | Online | Gamma-ray transition edge sensors with a thick-trilayer membrane; Thermal Property & Microwave Multiplexing Takahiro Kikuchi, Go Fujii (AIST), Ryota Hayakawa (TMU), Ryan Smith (UTokyo), Fuminori Hirayama, Yasushi Sato, Satoshi Kohjiro, Masahiro Ukibe (AIST), Masashi Ohno (UTokyo), Akira Sato, Hirotake Yamamori (AIST) SCE2021-16 |
Thick membranes of the gamma-ray transition-edge sensor (γ-TES) generally exhibit great mechanical strength and can supp... [more] | SCE2021-16 pp.22-27 |
| SCE | 2021-01-19 13:30 |
Online | Online | Thermal Conductance of Tri-layer Membranes for Multi-Pixel Gamma-Ray Transition Edge Sensors Takahiro Kikuchi, Satoshi Kohjiro, Ryota Hayakawa, Go Fujii, Fuminori Hirayama, Masahiro Ukibe (AIST), Ryan Smith, Masashi Ohno (U-Tokyo) SCE2020-18 |
We have been developing the Gamma-ray Transition Edge Sensors (TESs) which is able to achieve high energy resolution. Mu... [more] | SCE2020-18 pp.7-12 |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 13:40 |
Online | Online | Synthesis of Single Crystal BaTiO3 Nanoparticles for Self-Assembly Technique Misa Yamasaki, Masaki Yamaguchi (Shibaura Inst. of Tech.) EID2020-8 SDM2020-42 |
In this study, barium titanate single crystal fine particles used for inkjet-printing method were prepared by hydrotherm... [more] | EID2020-8 SDM2020-42 pp.29-34 |
| CPM | 2018-08-10 11:05 |
Aomori | Hirosaki Univ. | Reduction reaction of SiO2 layer on Si substrate by irradiation of electron beam Keisuke Fujimori, Yosuke Chida, Yusuke Masuda, Natsuki Ujiie, Yoshiharu Enta (Hirosaki Univ.) CPM2018-18 |
Irradiation effects of electron beam on 20-100-nm-thick SiO_{2} layer on Si(100) have been investigated by scanning elec... [more] | CPM2018-18 pp.47-52 |
| ET | 2017-01-28 16:05 |
Kanagawa | National Institute of Special Needs Education | Development of a Multipoint Synchronous Measuring System of Thermal Environment and Indoor Air Quality in a Classroom Naoko Mori, Ykari Sato, Satoshi Koyama (Hirosaki Univ.) ET2016-91 |
Thermal environment and indoor air quality of a classroom should be kept well everyday. In order to know transition and... [more] | ET2016-91 pp.69-73 |
| CPM, ED, SDM | 2016-05-19 14:15 |
Shizuoka | Shizuoka University, Hamamatsu campus (Joint Research Lab.) | Thermoelectric characteristics of flexible material with ZnO nanostructures Masaya Wanami, Selvaraj Shanthi, Yuhei Suzuki, Veluswamy Pandiyarasan (Shizuoka Univ.), Faiz Salleh (Univ. Malaya), Masaru Shimomura, Kenji Murakami, Hiroya Ikeda (Shizuoka Univ.) ED2016-16 CPM2016-4 SDM2016-21 |
For high-efficiency wearable power generator, we have investigated the ZnO nanostructures grown on cotton fabric (CF) as... [more] | ED2016-16 CPM2016-4 SDM2016-21 pp.15-18 |
| ED, SDM | 2016-03-03 14:50 |
Hokkaido | Centennial Hall, Hokkaido Univ. | Evaluation of wearable thermoelectric power generators by Sb-/Ag- doped ZnO nanocomposites and their properties Veluswamy Pandiyarasan, Jayaram Archana, Mani Navaneethan (Shizuoka Univ.), Salleh Faiz (Univ. Malaya), Yasuhiro Hayakawa, Hiroya Ikeda (Shizuoka Univ.) ED2015-122 SDM2015-129 |
Zinc Oxide (ZnO) has been investigated as an oxide thermoelectric material and doping of ZnO with n- and p- type nanostr... [more] | ED2015-122 SDM2015-129 pp.7-12 |
| R | 2015-11-19 14:50 |
Osaka | Observation of Power MOSFET under UIS avalanche breakdown condition using thermoreflectance image mapping Koichi Endo (Toshiba Corp.), Tomonori Nakamura (Hamamatsu Photonics K.K.), Koji Nakamae (Osaka Univ.) R2015-58 |
We investigate the temperature variation of the top surface image of power metal-oxide semiconductor field effect transi... [more] | R2015-58 pp.11-16 |
|
| SDM | 2015-06-19 13:00 |
Aichi | VBL, Nagoya Univ. | First-Principles Study on Hydrogen Annealing Effect in Si/SiO2 Interface by Thermal Oxidation Shingo Kawachi, Hiroki Shirakawa, Masaaki Araidai (Nagoya Univ.), Hiroyuki Kageshima (Shimane Univ.), Tetsuo Endoh (Tohoku Univ.), Kenji Shiraishi (Nagoya Univ.) SDM2015-45 |
Why is high-quality Si/SiO2 interface readily fabricated by simple thermal oxidation? Even though the question is closel... [more] | SDM2015-45 pp.37-40 |
| EMCJ, IEE-EMC, MW, EST [detail] | 2014-10-24 14:30 |
Akita | Akita Prefectural Univ. | Development of High-sensitivity HTS Receiver Module with Hermetic Thermal Insulation Waveguides Tamio Kawaguchi, Noritsugu Shiokawa, Kohei Nakayama, Mutsuki Yamazaki, Hiroaki Ikeuchi, Hiroyuki Kayano (Toshiba) EMCJ2014-64 MW2014-120 EST2014-78 |
We have proposed a high-sensitivity high-Tc superconducting (HTS) receiver module with hermetic thermal insulation waveg... [more] | EMCJ2014-64 MW2014-120 EST2014-78 pp.123-128 |
| VLD | 2014-03-05 13:00 |
Okinawa | Okinawa Seinen Kaikan | Investigation of thermal monitor for applying to Dynamic Voltage Scaling in SOTB Tatsuya Wada, Kimiyoshi Usami (Shibaura Inst. of Tech) VLD2013-160 |
SOTB (Silicon on Thin Buried Oxide) transistors can operate at high speed in the ultra-low voltage. However, variation i... [more] | VLD2013-160 pp.141-146 |
| SDM | 2013-12-13 09:00 |
Nara | NAIST | Analysis of thermal-induced degradation in oxide thin-film transistor under pulse voltage stress Kahori Kise (NAIST), Shigekazu Tomai (Idemitsu Kosan), Yoshihiro Ueoka, Haruka Yamazaki, Satoshi Urakawa (NAIST), Koki Yano (Idemitsu Kosan), Dapeng Wang, Mamoru Furuta (Kochi Univ. of Tech.), Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) SDM2013-116 |
In recent years, transparent amorphous oxide semiconductor (TAOS), represented by a-InGaZnO have been reported. Because ... [more] | SDM2013-116 pp.1-5 |
| EMD | 2013-11-16 09:05 |
Overseas | Huazhong University of Science and Technology, Wuhan, P.R.China | Simulation and analysis of temperature field and thermal stress of composite contacts in electrical life test of DC relay Wenying Yang, Dongyuan Li (Harbin Inst. of Tech.), Zhuanke Chen (Chugai USA), Guofu Zhai (Harbin Inst. of Tech.) EMD2013-77 |
The dosage of precious metal and the cost can be efficiently reduced by using the composite contacts. Especially the AgM... [more] | EMD2013-77 pp.11-14 |
| SDM | 2013-06-18 15:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
Challenges of high-reliability in SiC-MOS gate structures Junji Senzaki, Atsushi Shimozato, Yasunori Tanaka, Hajime Okumura (AIST) SDM2013-60 |
Influences of wafer-related defect and gate oxide fabrication process on MOS characteristics with gate oxides thermally ... [more] | SDM2013-60 pp.81-86 |
| SDM | 2013-06-18 16:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
Unusual Generation and Elimination of Mobile Ions in Thermally Grown Oxides in SiC-MOS Devices Heiji Watanabe, Atthawut Chanthaphan (Osaka Univ), Yuki Nakano, Takashi Nakamura (ROHM), Takuji Hosoi, Takayoshi Shimura (Osaka Univ) SDM2013-61 |
Unusual generation and elimination of mobile ions in thermally grown SiO2 on 4H-SiC(0001) were systematically investigat... [more] | SDM2013-61 pp.87-90 |
| SDM | 2013-06-18 16:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
An attempt for clarification of SiC oxidation mechanism
-- Common/different point to Si oxidation -- Yasuto Hijikata, Shuhei Yagi, Hiroyuki Yaguchi (Saitama Univ.) SDM2013-62 |
Further understanding of the SiC oxidization mechanism is indispensable for MOSFET using a SiC semiconductor to exceed t... [more] | SDM2013-62 pp.91-96 |
| SDM, ED (Workshop) |
2012-06-27 11:30 |
Okinawa | Okinawa Seinen-kaikan | [Invited Talk]
Gate Stack Technologies for Silicon Carbide Power MOS Devices Takuji Hosoi, Takashi Kirino, Yusuke Uenishi, Daisuke Ikeguchi, Atthawut Chanthaphan (Osaka Univ.), Akitaka Yoshigoe, Yuden Teraoka (JAEA), Shuhei Mitani, Yuki Nakano, Takashi Nakamura (ROHM), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) |
Silicon carbide (SiC) is a promising material for high-power electronic devices. Although SiO$_2$ dielectric film can be... [more] | |
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