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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, ED, CPM 2014-11-28
16:00
Osaka   Effects of thermal cleaning on surface of bulk GaN substrates
Shunsuke Okada, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Reina Miyagawa, Osamu Eryu (Nagoya Inst. Tech.), Tamotsu Hashizume (Hokkaido Univ.) ED2014-96 CPM2014-153 LQE2014-124
Thermal cleaning at high temperature from 800 oC to 1100 oC of free-standing polar (0001) plane and non-polar (10-10) (2... [more] ED2014-96 CPM2014-153 LQE2014-124
pp.111-115
ED, MW 2008-01-16
13:50
Tokyo Kikai-Shinko-Kaikan Bldg. Effects of a thermal CVD SiN passivation film on electrical characteristics of AlGaN/GaN HEMTs
Toshiharu Marui, Shinichi Hoshi, Yoshiaki Morino, Masanori Itoh, Isao Tamai, Fumihiko Toda, Hideyuki Okita, Yoshiaki Sano, Shohei Seki (OKI) ED2007-208 MW2007-139
In AlGaN/GaN HEMTs, we used a thermal CVD SiN surface passivation film for suppressing the current collapse due to AlGaN... [more] ED2007-208 MW2007-139
pp.11-15
ED, SDM 2007-06-25
13:00
Overseas Commodore Hotel Gyeongju Chosun, Gyeongju, Korea [Invited Talk] Si/SiGe continuous epitaxial growth technology for high speed SiGe HBTs
Katsuya Oda (Hitachi)
A continuous-epitaxial-growth technique, using a cold-wall rapid thermal UHV/CVD system, for Si/SiGe multi-layers contai... [more]
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