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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
LQE, ED, CPM |
2014-11-28 16:00 |
Osaka |
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Effects of thermal cleaning on surface of bulk GaN substrates Shunsuke Okada, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Reina Miyagawa, Osamu Eryu (Nagoya Inst. Tech.), Tamotsu Hashizume (Hokkaido Univ.) ED2014-96 CPM2014-153 LQE2014-124 |
Thermal cleaning at high temperature from 800 oC to 1100 oC of free-standing polar (0001) plane and non-polar (10-10) (2... [more] |
ED2014-96 CPM2014-153 LQE2014-124 pp.111-115 |
ED, MW |
2008-01-16 13:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Effects of a thermal CVD SiN passivation film on electrical characteristics of AlGaN/GaN HEMTs Toshiharu Marui, Shinichi Hoshi, Yoshiaki Morino, Masanori Itoh, Isao Tamai, Fumihiko Toda, Hideyuki Okita, Yoshiaki Sano, Shohei Seki (OKI) ED2007-208 MW2007-139 |
In AlGaN/GaN HEMTs, we used a thermal CVD SiN surface passivation film for suppressing the current collapse due to AlGaN... [more] |
ED2007-208 MW2007-139 pp.11-15 |
ED, SDM |
2007-06-25 13:00 |
Overseas |
Commodore Hotel Gyeongju Chosun, Gyeongju, Korea |
[Invited Talk]
Si/SiGe continuous epitaxial growth technology for high speed SiGe HBTs Katsuya Oda (Hitachi) |
A continuous-epitaxial-growth technique, using a cold-wall rapid thermal UHV/CVD system, for Si/SiGe multi-layers contai... [more] |
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