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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, R, ED 2007-11-16
Osaka   Oxidation of SiC and GaN Surface in High Pressure and High Temperature Water
Takashi Futatsuki, Taro Oe (Organo Corp.), Hidemitsu Aoki, Naoyoshi Komatsu, Chiharu Kimura, Takashi Sugino (Osaka Univ.) R2007-48 ED2007-181 SDM2007-216
The field effect transistor (FET) devices on Silicon Carbide (SiC) and Gallium nitride (GaN), which have a wide bandgap,... [more] R2007-48 ED2007-181 SDM2007-216
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