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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2019-01-29
09:30		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Multidomain Dynamics of Ferroelectric Polarization in Negative Capacitance State and its Impacts on Performances of Field-Effect Transistors
Hiroyuki Ota, Tsutomu Ikegami, Koichi Fukuda, Junichi HattoriI, Hidehiro Asai, Kazuhiko Endo, Shinji Migita (AIST), Akira Toriumi (The Univ. of Tokyo) SDM2018-81		 In this paper, we clarified the multidomain dynamics of ferroelectric polarization in the Negative Capacitance Field-Eff... [more] SDM2018-81
pp.1-4
SDM 2019-01-29
09:55		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Assessment of Steep-Subthreshold Swing Behaviors in Ferroelectric Field-Effect Transistors
Shinji Migita, Hiroyuki Ota (AIST), Akira Thorium (U. Tokyo) SDM2018-82		 Steep-subthreshold swing (steep-SS) behaviors are observable in recent ferroelectric-gate field-effect transistors (FE-F... [more] SDM2018-82
pp.5-8
SDM 2016-06-29
10:40		 Tokyo Campus Innovation Center Tokyo [Invited Lecture] Design of SOI-FETs for Steep Slope Switching using Negative Capacitance in Ferroelectric Gate Insulators
Hiroyuki Ota, Shinji Migita, Junichi Hattori, Koichi Fukuda (AIST), Akira Toriumi (The Univ. of Tokyo) SDM2016-34		 This paper discusses a design of fully depleted silicon-on-insulator field-effect transistors with ferroelectric gate in... [more] SDM2016-34
pp.9-13
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