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Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 14件中 1~14件目  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2019-06-21
14:30
Aichi Nagoya Univ. VBL3F [Invited Lecture] Observation of three dimensional atomic arrangements of active and inactive impurities heavy doped in silicon by using photoelectron holography method
Kazuo Tsutsui (Tokyo Tech), Tomohiro Matsushita (JASRI), Kotaro Natori, Tatsuhiro Ogawa (Tokyo Tech), Takayuki Muro (JASRI), Yoshitada Morikawa (Osaka Univ.), Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi (Tokyo Tech), Kouichi Hayashi (Nagoya Inst. Tech.), Fumihiko Matsui (Inst. Molecular Science), Toyohiko Kinoshita (JASRI) SDM2019-30
Photoelectron holography method combined with first-principles simulations determined the local three-dimensional atomic... [more] SDM2019-30
pp.23-27
EST 2019-05-17
14:40
Aichi Nagoya Inst. Tech. Dielectric Constant Change of Silicon Substrate after H/He Ion Irradiation for Loss Reduction
Takuichi Hirano (Tokyo City Univ.), Maya Mizuno (NICT), Ning Li (Sophia Univ.), Takeshi Inoue, Masatsugu Sogabe (SHI-ATEX), Kenichi Okada (Tokyo Tech.) EST2019-5
The hydrogen (H) or helium (He) ion irradiation on a silicon (Si) substrate had been proposed to reduce loss in high fre... [more] EST2019-5
pp.19-23
LQE, LSJ 2017-05-26
10:25
Ishikawa   Optical I/O for integrated Silicon-Photonics Chips -- Output-Stabilization of Grating Coupler/Butt-coupling of Spot-Size Converter --
Masatoshi Tokushima, Jun Ushida, Kenichiro Yashiki, Tsuyoshi Horikawa, Kazuhiko Kurata (PETRA) LQE2017-12
We discuss individual technical issues of grating couplers (GCs) and spot size converters (SSCs), which are optical inpu... [more] LQE2017-12
pp.49-52
LQE, OPE 2015-06-19
15:15
Tokyo   Spot-size converter integrated quantum dot laser diodes on GaAs substrate.
Ayahito Uetake, Kazumasa Takabayashi, Tokuharu Kimura, Tsuyoshi Yamamoto (Fujitsu Labs.), Masaomi Yamaguchi, Kan Takada, Keizo Takemasa, Mitsuru Sugawara (QD laser), Yasuhiko Arakawa (Univ. of Tokyo) OPE2015-17 LQE2015-27
Silicon (Si) photonics is a promising technology for compact, large-capacity optical transmitters and receivers. As a li... [more] OPE2015-17 LQE2015-27
pp.35-38
MRIS, ITE-MMS, ITE-CE [detail] 2015-01-23
15:45
Osaka   Room Temperature Operation of Silicon Spin-MOSFET
Takayuki Tahara (Kyoto Univ.), Tomoyuki Sasaki (TDK), Yuichiro Ando (Kyoto Univ.), Makoto Kameno (Osaka Univ.), Hayato Koike, Ryo Oikawa (TDK), Toshio Suzuki (AIT), Masashi Shiraishi (Kyoto Univ.) MR2014-43
A technology for CMOS transistors has been developing for many years by establishing nano-lithography and high density i... [more] MR2014-43
pp.19-24
SDM, EID 2014-12-12
15:45
Kyoto Kyoto University Porous Silicon 3D micro structure formation by strain-induced self-rolling by porosity control
Keita Ishiguro, Masaki Denokami, Kanna Aoki, Minoru Fujii (Kobe Univ.) EID2014-31 SDM2014-126
Silicon (Si) is not only the basis of electronic devices, but also established as a basic material of various devices, e... [more] EID2014-31 SDM2014-126
pp.95-98
MWP, EMT, PN, LQE, OPE, EST, IEE-EMT [detail] 2014-01-24
09:00
Kyoto Doshisha University Electromagnetic Simulation of High Resistance Silicon Substrate by Helium ion Irradiation
Yuki Yao, Takuichi Hirano, Ning Li, Kenichi Okada, Akira Matsuzawa, Jiro Hirokawa, Makoto Ando (Tokyo Inst. of Tech.), Takeshi Inoue, Akinori Masaoka, Hitoshi Sakane (SEI) PN2013-61 OPE2013-175 LQE2013-161 EST2013-110 MWP2013-81
A helium(He)-3 ion bombardment technique has been proposed for creating locally high resistivity silicon substrate areas... [more] PN2013-61 OPE2013-175 LQE2013-161 EST2013-110 MWP2013-81
pp.181-185
LQE, OPE 2013-06-21
16:40
Tokyo   Four-wavelength hybrid laser array for silicon CWDM transmitter
Shinsuke Tanaka, Seok-Hwan Jeong, Tomoyuki Akiyama, Shigeaki Sekiguchi, Teruo Kurahashi, Yu Tanaka, Ken Morito (PETRA/Fujitsu Labs.) OPE2013-16 LQE2013-26
A compact, large-scale integrated Si optical I/O chip is a very promising candidate for an optical interconnections used... [more] OPE2013-16 LQE2013-26
pp.49-53
OME 2013-03-05
15:45
Saga AIST Kyushu Center [Invited Talk] Surface potentials and electronic states of alkyl self-assembled monolayer covalently bonded to Si
Hiroyuki Sugimura, Kneji Shimosaka, Marvin Ustaris Herrera, Takashi Ichii, Kuniaki Murase (Kyoto Univ.) OME2012-100
Alkyl self-Assembled Monolayers (SAMs), which are covalently bonded to Si through Si-C bonds, have been formed by photoc... [more] OME2012-100
pp.41-46
LQE, CPM, EMD, OPE, R 2012-08-24
14:00
Miyagi Tohoku Univ. Silicon-germanium/silicon nano-wire waveguide for energy-saving optical switch and variable optical attenuator
Shigeaki Sekiguchi, Lei Zhu, Teruo Kurahashi, Kenichi Kawaguchi, Ken Morito (Fujitsu Labs.) R2012-45 EMD2012-51 CPM2012-76 OPE2012-83 LQE2012-49
For active optical waveguide devices on silicon (Si)-platform, highly
efficient carrier accumulation in the waveguide ... [more]
R2012-45 EMD2012-51 CPM2012-76 OPE2012-83 LQE2012-49
pp.115-120
LQE, LSJ 2012-05-25
11:05
Fukui Univ. of Fukui (Bunkyo Campus) A Hybrid Integrated Light Source on A Si substrate using A Trident Spot-size Convertor
Nobuaki Hatori (PETRA/PECST), Makoto Okano (PECST/AIST), Masashige Ishizaka, Takanori Shimizu, Tsuyoshi Yamamoto, Yutaka Urino (PETRA/PECST), Masahiko Mori (PECST/AIST), Takahiro Nakamura (PETRA/PECST), Yasuhiko Arakawa (PECST/IIS Univ. of Tokyo) LQE2012-4
We have developed a novel spot size converter (SSC) with trident silicon (Si) waveguide for hybrid integrated light sour... [more] LQE2012-4
pp.15-20
OPE 2009-12-18
16:05
Tokyo Kikai-Shinko-Kaikan Bldg. Electro-luminescence at 1.5um from Er-doped SiOx
Yoshihiro Naka, Shinya Soneda, Seiichi Nakano, Tsukuru Hikida, Takeshi Sumiyoshi (Kumamoto Univ.), Masahiro Tsuchiya (NICT), Yusui Nakamura (Kumamoto Univ.) OPE2009-168
We have observed room-temperature 1.5$\mu$m-infrared electroluminescence (EL) from a p-i-n heterostructure: n-SnO$_2$ / ... [more] OPE2009-168
pp.41-45
SDM, ED 2008-07-11
13:50
Hokkaido Kaderu2・7 SiC MESFET Power Amplifier for 3.6 GHz-3.8 GHz WiMAX Application
Jae-Kwon Kim, Kyunghwan Kim, Jinwook Burn (Sogang Univ.) ED2008-99 SDM2008-118
Silicon-carbide (SiC) devices have received increased attention for high-power, high-speed, high temperature, and radiat... [more] ED2008-99 SDM2008-118
pp.313-316
ED, SDM 2007-06-25
13:00
Overseas Commodore Hotel Gyeongju Chosun, Gyeongju, Korea [Invited Talk] Room-temperature-operating single-electron devices using silicon nanowire MOSFET
Katsuhiko Nishiguchi, Yukinori Ono, Akira Fujiwara (NTT), Hiroshi Inokawa (Shizuoka Univ.), Yasuo Takahashi (Hokkaido Univ.)
In this paper, we report the development of devices for single-electron transfer and detection at room temperature, usin... [more]
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