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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, MWPTHz | 2023-12-22 14:20 |
Miyagi | RIEC, Tohoku Univ. (Primary: On-site, Secondary: Online) |
MOCVD growth and device characteristics of N-polar GaN HEMT with high-resistivity C-doped GaN buffer Yuki Yoshiya, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Fumito Nakajima (NTT)  ED2023-63 MWPTHz2023-73 |
MOCVD-grown N-polar GaN HEMTs with high-resistivity carbon-doped GaN buffer were fabricated. Carbon auto doping in buffe... [more] | ED2023-63 MWPTHz2023-73 pp.46-51 |
| CPM | 2022-08-04 16:15 |
Hokkaido | Hydrogen gas effects on the properties of boron carbide films prepared by magnetron sputtering Nishida Tatsuya, Taniguchi Ryu, Masayoshi Sato, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki (Hirosaki Univ.), Hirokazu Fukidome (Touhoku Univ.), Hideki Nakazawa (Hirosaki Univ.) CPM2022-15 |
We have deposited amorphous boron carbide (B4C) films and hydrogenated amorphous B4C (B4C:H) films by RF magnetron sputt... [more] | CPM2022-15 pp.14-17 |
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| SDM | 2019-06-21 11:20 |
Aichi | Nagoya Univ. VBL3F | Ultra-low resistance contact for n-type Ge1-xSnx with in-situ Sb heavily doping and nickel stanogermanide formation Jihee Jeon, Akihiro Suzuki, Shigehisa Shibayama, Shigeaki Zaima, Osamu Nakatsuka (Nagoya Univ.) SDM2019-26 |
Ge1−xSnx is a promising channel material for CMOS transistors because of its higher mobilities of both electron and hole... [more] | SDM2019-26 pp.5-9 |
| ED, LQE, CPM | 2018-11-30 09:50 |
Aichi | Nagoya Inst. tech. | Chemical Bath Deposition of Undoped and Li Doped CuO Films and Thier Structural and Electrical Properties Hideyuki Okada, Tomoaki Terasako, Kenji Gochoh, Naoya Hayashimoto (Ehime Univ.) ED2018-43 CPM2018-77 LQE2018-97 |
Undoped and Li-doped CuO films were grown on Au seed layers by chemical bath deposition (CBD) using the mixed aqueous so... [more] | ED2018-43 CPM2018-77 LQE2018-97 pp.49-54 |
| ED, LQE, CPM | 2018-11-30 11:15 |
Aichi | Nagoya Inst. tech. | Fabrication and evaluation of p-type Cu-AlOx thin film by photochemical deposition method Masanari Umemura, Masaya Ichimura (Nagoya Inst. Tech.) ED2018-46 CPM2018-80 LQE2018-100 |
AlOx has many physical properties suitable for electronic devices such as wide bandgap and high dielectric breakdown ele... [more] | ED2018-46 CPM2018-80 LQE2018-100 pp.65-70 |
| SDM | 2018-10-17 15:20 |
Miyagi | Niche, Tohoku Univ. | Low-Temperature Formation of Ohmic Contact for Si TFT Fabrication by Excimer Laser Doping with Phosphoric Acid Coating Kaname Imokawa (Kyushu Univ), Nozomu Tanaka (Kyushu Univ.), Akira Suwa (Kyushu Univ), Daisuke Nakamura, Taizoh Sadoh (Kyushu Univ.), Tetsuya Goto (New Industry Creation Hatchery Center, Tohoku Univ.), Hiroshi Ikenoue (Kyushu Univ) SDM2018-54 |
There are some issues in printable Si TFT processes. In particlular, formation of ormic contact of silicon TFT requiers ... [more] | SDM2018-54 pp.11-14 |
| SDM, EID | 2017-12-22 10:45 |
Kyoto | Kyoto University | Conduction mechanisms in heavily Al-doped 4H-SiC epilayers
-- Dependencies of resistivity on Al concentration and temperature -- Shinji Ozawa, Akinobu Takeshita, TAtsuya imamura, Kota Takano, Kazuya Okuda, Atsuki Hidaka, Hideharu Matsuura (OECU), Shiyang Ji, Kazuma Eto, Kazuoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura (AIST) EID2017-12 SDM2017-73 |
To realize SiC n-channel insulated gate bipolar transistors (IGBTs) with very low on-resistance, it is essential to redu... [more] | EID2017-12 SDM2017-73 pp.5-8 |
| SDM, EID | 2017-12-22 11:00 |
Kyoto | Kyoto University | Temperature Dependent Hall Coefficient in Heavily Al-Doped 4H-SiC
-- Relationship between Inversion of Hall Coefficient and Conduction Mechanism -- Rinya Nishihata, Akinobu Takeshita, Tatsuya Imamura, Kota Takano, Kazuya Okuda, Shinji Ozawa, Atsuki Hidaka, Hideharu Matsuura (OECU), Shiyang Ji, Kazuma Eto, Kazutoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura (AIST) EID2017-13 SDM2017-74 |
To realize SiC n-channel insulated gate bipolar transistors (IGBTs) with very low on-resistance, it is essential to redu... [more] | EID2017-13 SDM2017-74 pp.9-12 |
| SDM, EID | 2017-12-22 11:15 |
Kyoto | Kyoto University | Electric properties in Al-N codoped p-type 4H-SiC epilayers
-- Comparison between temperature dependent resistivity in Al-doped and codoped samples -- Atsuki Hidaka, Akinobu Takeshita, Tatsuya Imamura, kota Takano, Kazuya Okuda, Shinji Ozawa, Hideharu Matsuura (OECU), Shiyang Ji, Kazuma Eto, Kazutoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura (AIST) EID2017-14 SDM2017-75 |
To realize SiC n-channel insulated gate bipolar transistors (IGBTs) with very low on-resistance, it is required to reduc... [more] | EID2017-14 SDM2017-75 pp.13-16 |
| MW (2nd) |
2016-06-09 - 2016-06-11 |
Overseas | KMUTNB, Bangkok, Thailand | Gain Enhancement of 140 GHz CMOS On-chip Antenna with Optimal Ion-Irradiated-Silicon Junji Sato, Tomohiro Murata (Panasonic) |
This paper presents the gain enhancement techniques for a 140 GHz CMOS on-chip antenna. The proposed CMOS on-chip folded... [more] | |
| SANE | 2015-11-26 16:55 |
Miyagi | Tohoku University, Katahira Sakura Hall | Archaeology and geophysical integrated survey results for Xiongnu period site, Mongolia Tseedulam Khuut, Erdenebold Lkhagvasuren (Mongolian Univ. S&T), Nyambayar Tsend-Ayush (RCAG) SANE2015-70 |
Archaeological methods involve excavation, which is time consuming. Sometimes, this effort may not be very cost-effectiv... [more] | SANE2015-70 pp.35-38 |
| MWP, EMT, PN, LQE, OPE, EST, IEE-EMT [detail] | 2014-01-24 09:00 |
Kyoto | Doshisha University | Electromagnetic Simulation of High Resistance Silicon Substrate by Helium ion Irradiation Yuki Yao, Takuichi Hirano, Ning Li, Kenichi Okada, Akira Matsuzawa, Jiro Hirokawa, Makoto Ando (Tokyo Inst. of Tech.), Takeshi Inoue, Akinori Masaoka, Hitoshi Sakane (SEI) PN2013-61 OPE2013-175 LQE2013-161 EST2013-110 MWP2013-81 |
A helium(He)-3 ion bombardment technique has been proposed for creating locally high resistivity silicon substrate areas... [more] | PN2013-61 OPE2013-175 LQE2013-161 EST2013-110 MWP2013-81 pp.181-185 |
| CPM | 2013-08-02 11:15 |
Hokkaido | Barrier properties of TaWN films in Cu/Si contact Mayumi B. Takeyama, Masaru Sato, Atsushi Noya (Kitami Inst. of Tech.) CPM2013-52 |
In the Si-LSI technology, a barrier material of high thermal and structural stability is required for realization of hig... [more] | CPM2013-52 pp.69-72 |
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| CPM | 2012-10-26 13:50 |
Niigata | Effect of a low-temperature buffer layer on the properties of ZnO films grown on glass substrates using catalytically generated high-energy H2O Takahiro Oyanagi, Kazuki Takezawa, Takahiro Kato (Nagaoka Univ. Technol), Hironori Katagiri, Kazuo Jimbo (NNCT), Kanji Yasui (Nagaoka Univ. Technol) CPM2012-94 |
ZnO thin films were grown through a reaction between dimethylzinc and high-energy H_{2}O produced by a Pt-catalyzed H_{2... [more] | CPM2012-94 pp.7-11 |
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| CPM | 2012-10-26 14:15 |
Niigata | Examination of Resistivity of AZO Thin Films Deposited by Sputtering Method Katsuhito Nagoshi, Yusuke Tomiguchi, Hidehiko Shimizu, Haruo Iwano, Takahiro Kawakami, Yasuo Fukushima, Kotaro Nagata, Nozomu Tsuboi, Takahiro Nomoto (Niigata Univ.) CPM2012-95 |
We examined the effects of the substrate temperature and post-annealing in vacuum less than 2.0×10-6 Torr of AZO thin fi... [more] | CPM2012-95 pp.13-16 |
|
| SDM, ED (Workshop) |
2012-06-28 10:40 |
Okinawa | Okinawa Seinen-kaikan | [Poster Presentation]
The surface morphology and electrical properties of NiO with various RF power and O2/(Ar+O2) gas mixture Jonghun Kim, Gyohun Koo, Changju Lee, Sungho Hahm (Kyungpook National Univ.), Youngchul Jung (Gyeongju Univ.), Yougsoo Lee (Kyungpook National Univ.) |
The crystalline structures of reactively sputtered nickel oxide films grown on SiO2/Si were systematically analyzed by a... [more] | |
| EMD, CPM, OME | 2012-06-22 14:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Characteristics of ZnO films grown on glass substrates using high-energy H2O generated by a catalytic reaction
-- Effect of a sputter deposited buffer layer -- Takahiro Oyanagi, Souichi Satomoto, Kai Sato, Takahiro Kato (Nagaoka Univ. Technol.), Hironori Katagiri, Kazuo Jimbo (Nagaoka Nat. College Technol.), Kanji Yasui (Nagaoka Univ. Technol.) EMD2012-10 CPM2012-27 OME2012-34 |
ZnO thin films were grown through a reaction between dimethylzinc and high-energy H_2O produced by a Pt-catalyzed H_2 O_... [more] | EMD2012-10 CPM2012-27 OME2012-34 pp.13-18 |
| CPM | 2011-08-10 15:20 |
Aomori | Properties of ZrBx Thin Films with Off-stoichiometry from ZrB2 Compound Mayumi B. Takeyama, Masaru Sato, Atsushi Noya (Kitami Inst. of Technol.) CPM2011-61 |
We have examined characteristics of ZrBx thin films with off-stoichiometry from the ZrB2 compound as an application as a... [more] | CPM2011-61 pp.27-30 |
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| ED | 2011-07-29 13:30 |
Niigata | Multimedia system center, Nagaoka Univ. of Tech. | Effect of C and Si co-doping high resistivity GaN buffer layer on AlGaN/GaN HFETs Masayuki Fukai, Shusuke Kakizawa, Hiroshi Fushimi (New Japan Radio) ED2011-37 |
Based on Fermi level effect, we intentionally incorporated carbon into Si-doped GaN by low-temperature grown MOVPE at 95... [more] | ED2011-37 pp.1-6 |
| OME | 2011-01-19 14:15 |
Aichi | Electronic Properties of TiO2 Thin Films under UV Light Irradiation Yusuke Watanabe, Yuji Muramoto, Noriyuki Shimizu (Meijo Univ.) OME2010-66 |
TiO2 has photocatalysis. When UV light irradiated, electron-hole pairs are generated in TiO2. The source of photocatalys... [more] | OME2010-66 pp.39-43 |
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