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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, IEE-BMS, IEE-MSS | 2023-08-18 14:25 |
Tokyo | (Primary: On-site, Secondary: Online) |
Evaluation of photoresponsive properties of metal/Nb:SrTiO3 junction
-- Towards the realization of optoelectronic synapse device -- Shin Sata, Yumeng Zheng, Kentaro Kinoshita (Tokyo Univ. of Sci.)  ED2023-11 |
Sn-doped In_2O_3(ITO)/Nb:SrTiO_3(NSTO) junctions are expected to be a optoelectronic synapse with tunable characteristic... [more] | ED2023-11 pp.6-9 |
| CPM | 2023-07-31 15:10 |
Hokkaido | (Primary: On-site, Secondary: Online) |
Investigation of MIM structure with ZrN electrode as Resistive Random Access Memory Toyoki Miura, Masaru Sato, Mayumi Takeyama (Kitami Institute) CPM2023-14 |
In the rapidly advancing information society, higher performance nonvolatile memories are demanded. In such a situation,... [more] | CPM2023-14 pp.11-12 |
| ICD | 2023-04-10 11:25 |
Kanagawa | (Primary: On-site, Secondary: Online) |
ICD2023-3 |
(To be available after the conference date) [more] | ICD2023-3 p.8 |
| ED, IEE-BMS, IEE-MSS | 2022-08-18 15:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. B3-2 (Primary: On-site, Secondary: Online) |
Neuromorphic computing using photo-induced current properties in ITO/Nb:SrTiO3 junction
-- For reservoir computing application -- Yutaro Yamazaki, Hiroyuki Kai, Kentaro Kinoshita (Tokyo Univ. of Sci.) ED2022-21 |
Recently, needs for edge computing have been increasing, and methods to reduce computational cost while maintaining high... [more] | ED2022-21 pp.17-20 |
| CPM | 2021-10-27 15:10 |
Online | Online | Characterization of HfO2 film for Resistive Random Access Memory Yuki Kawai, Masaru Sato, Mayumi B Takeyama (Kitami Inst. of Tech.) CPM2021-31 |
In recent years, resistive random access memory has been attracting attention because it can operate faster and consume ... [more] | CPM2021-31 pp.43-45 |
| MIKA (3rd) |
2021-10-29 10:30 |
Okinawa | (Primary: On-site, Secondary: Online) |
[Poster Presentation]
Unsourced Random Access Communications by Clustering Devices' Specific Channel Fading Coefficients Hinako Nakanishi, Tomotaka Kimura, Jun Cheng (Doshisha Univ.) |
A sequential stitching algorithm to stitch pieces of one message together is proposed for unsourced random access commun... [more] | |
| ED, SDM, CPM | 2021-05-27 14:10 |
Online | Online | Evaluation of I-V Characteristics of Zr/ZrOx/Pt Structure for Resistive Random Access Memory Yuki Kawai, Masaru Sato, Mayumi B. Takeyama (Kitami Inst. of Tech.) ED2021-3 CPM2021-3 SDM2021-14 |
Resistive random access memory is attracting attention as the next generation non-volatile memory. However, there are v... [more] | ED2021-3 CPM2021-3 SDM2021-14 pp.11-14 |
| NS | 2021-05-13 15:15 |
Online | Online | Graph Reordering while Acquiring Graph Data Managed Distributedly by Random Walk Kohei Tsuchida, Kunitake Kaneko (Keio Univ.) NS2021-20 |
It is known that cache misses occur so many times, which leads to slow down the calculation speed while graph processing... [more] | NS2021-20 pp.32-37 |
| CPM | 2021-03-03 13:45 |
Online | Online | Electrical properties of Zr/ZrO2/Pt stacked structure with/without thin CuOx film Yuki Kawai, Kazuki Yamamoto, Yu Otsuka, Masaru Satou, Mayumi B.Takeyama (Kitami Inst. of Tech.) CPM2020-69 |
In recent years, a Resistive Random Access Memory (RRAM) has been attracting attention as one of the most promising next... [more] | CPM2020-69 pp.52-54 |
| CPM | 2020-10-29 16:40 |
Online | Online | Preparation of low-temperature-deposited ZrO2 film applicable to RRAM Masaru Sato, Yuki Kawai, Takayuki Mukai, Mayumi B. Takeyama (Kitami Inst. of tech.) CPM2020-21 |
In order to form insulating films applicable to resistive random access memory, we have prepared low-temperature-deposit... [more] | CPM2020-21 pp.38-40 |
| MRIS, ITE-MMS | 2020-10-05 14:20 |
Online | Online | Recent progress on piezo-electronic magnetoresistive devices using giant magnetostrictive SmFe2 thin films Soki Urashita, Hayato Onozawa, Ryota Kitagawa, Masato Tomita, Takashi Harumoto, Ji Shi, Yoshio Nakamura, Yota Takamura, Shigeki Nakagawa (Tokyo Tech.) MRIS2020-3 |
In magnetic tunnel junctions (MTJs) for magnetoresistive random access memory, a trade-off relationship between the crit... [more] | MRIS2020-3 pp.12-15 |
| MRIS, ITE-MMS, IEE-MAG | 2019-10-17 13:00 |
Fukuoka | Kyushu University (Nishijin Plaza) | Spin orbit torque-magnetization switching without external field in rare earth-transition metal alloy Masakazu Wakae, Masahiro Itoh, Yuichiro Kurokawa, Kohei Ohnishi, Hiromi Yuasa (Kyushu Univ.) MRIS2019-15 |
SOT (Spin-orbit torque) has been attractively studied as one of the most active research topics because it can manipulat... [more] | MRIS2019-15 pp.1-5 |
| CPSY, DC, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC [detail] | 2018-03-08 13:55 |
Shimane | Okinoshima Bunka-Kaikan Bldg. | CPSY2017-146 DC2017-102 |
Resistive RAM (ReRAM) is one of the most promising memory technologies due to its property such as high density, low-pow... [more] | CPSY2017-146 DC2017-102 pp.257-262 |
| MBE, NC, NLP (Joint) |
2018-01-27 11:45 |
Fukuoka | Kyushu Institute of Technology | Neural Pulse Coding using ReRAM-based Neuron Devices Kazuki Nakada (Hiroshima City Univ.) NLP2017-98 |
Researches on hardware implementation of neuromorphic systems and machine learning algorithms are steadily progressing. ... [more] | NLP2017-98 pp.63-68 |
| SDM, EID | 2016-12-12 13:45 |
Nara | NAIST | Relationship between memory characteristics and Schottky parameters in Pt/Nb:STO junction Toshiki Shiomi, Yuuto Hagihara, Satoru Kishida, Kentaro Kinoshita (Tottori Univ.) |
[more] | |
| ED | 2016-08-09 15:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | All-mechanical random access memory in a phonon waveguide Daiki Hatanaka, Imran Mahboob, Koji Onomitsu, Hiroshi Yamaguchi (NTT) ED2016-37 |
We propose and demonstrate all mechanical manipulation of a random access memory in a GaAs / AlGaAs-based phonon circuit... [more] | ED2016-37 pp.19-24 |
| MRIS, ITE-MMS | 2016-07-08 14:15 |
Tokyo | Chuo Univ. | Perpendicular magnetic anisotropy induced by oxygen exposure at Co_2FeSi/MgO interfaces Koki Shinohara, Takahiro Suzuki, Yota Takamura, Shigeki Nakagawa (Tokyo Tech.) MR2016-16 |
We attempted to add perpendicular magnetic anisotropy (PMA) to half-metallic full-Heusler Co_2FeSi (CFS) alloy thin film... [more] | MR2016-16 pp.19-24 |
| SCE | 2016-04-20 14:40 |
Tokyo | On-chip Implementation of Random-Access-Memory and RSFQ Microprocessor with High-Functionality Ryo Sato (Nagoya Univ.), Yuki Ando (Kyoto Univ.), Masamitsu Tanaka, Akira Fujimaki (Nagoya Univ.), Kazuyoshi Takagi, Naofumi Takagi (Kyoto Univ.) SCE2016-5 |
The single flux quantum (SFQ) microprocessor demonstrated so far was not able to run meaningful programs due to the limi... [more] | SCE2016-5 pp.25-30 |
|
| ICD | 2016-04-14 13:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
Visualization of Filament of ReRAM during Resistive Switching by in-situ Transmission Electron Microscopy Yasuo Takahashi (Hokkaido Univ.), Masaki Kudo (Kyusyu Univ.), Masashi Arita (Hokkaido Univ.) ICD2016-5 |
Resistive random access memories (ReRAMs) have been investigated as a next generation non-volatile memory, where 16-Gbit... [more] | ICD2016-5 pp.21-26 |
| VLD, DC, IPSJ-SLDM, CPSY, RECONF, ICD, CPM (Joint) [detail] |
2015-12-01 13:50 |
Nagasaki | Nagasaki Kinro Fukushi Kaikan | Background Sequence Generation for Neighborhood Pattern Sensitive Fault Testing in Random Access Memories Shin'ya Ueoka, Tomokazu Yoneda, Yuta Yamato, Michiko Inoue (NAIST) VLD2015-40 DC2015-36 |
The Neighborhood Pattern Sensitive Fault (NPSF) is widely discussed fault model for memories, and it occurs when a memor... [more] | VLD2015-40 DC2015-36 pp.19-24 |
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