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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| OME | 2017-12-01 11:00 |
Saga | Sun Messe Tosu | Information obtained from weak luminescence Noriyuki Takada (AIST)  OME2017-40 |
It is not easy to catch weak luminescence and obtain further spectroscopic spectrum. If weak luminescence generated at t... [more] | OME2017-40 pp.23-25 |
| SDM | 2015-10-30 10:50 |
Miyagi | Niche, Tohoku Univ. | Ferroelectric BiFeO3 Formation with Oxigen Radical Treatment Fuminobu Imaizumi, Tetsuya Goto, Akinobu Teramoto, Shigetoshi Sugawa (Tohoku Univ.) SDM2015-78 |
Oxygen radical treatment was applied to sputter-deposited BiFeO3 (BFO) thin film which is expected to be used for ferroe... [more] | SDM2015-78 pp.41-44 |
| SDM | 2014-10-16 14:50 |
Miyagi | Niche, Tohoku Univ. | Introduction of Atomically Flattening of Silicon Surface in Shallow Trench Isolation Process Technology Tetsuya Goto, Rihito Kuroda, Naoya Akagawa, Tomoyuki Suwa, Akinobu Teramoto, Xiang Li, Toshiki Obara, Daiki Kimoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.), Yuki Kumagai, Yutaka Kamata, Katsuhiko Shibusawa (LAPIS Semiconductor Miyagi) SDM2014-85 |
Atomically flattening technology was introduced to the widely-used complementary metal oxide silicon (CMOS) process empl... [more] | SDM2014-85 pp.7-12 |
| SDM | 2012-06-21 10:55 |
Aichi | VBL, Nagoya Univ. | Clarification of Interfacial Reaction Mechanism in O2 Annealing or O radical Process for Al2O3/Ge Structure Shigehisa Shibayama, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2012-48 |
To realize a high performance Ge MOSFET, it is quite important to achieve simultaneously the low interface state density... [more] | SDM2012-48 pp.27-32 |
| SDM | 2011-10-20 16:10 |
Miyagi | Tohoku Univ. (Niche) | [Special Talk]
Science Based New Silicon Technologies Tadahiro Ohmi (Tohoku Univ.) SDM2011-102 |
Current Silicon Technologies can fabricate LSI only on (100) Silicon surface using two dimensional planar structure MOS ... [more] | SDM2011-102 pp.27-36 |
| SDM, ED (2nd) |
2011-06-29 - 2011-07-01 |
Overseas | Legend Hotel, Daejeon, Korea | Clear Difference between the Chemical Structure of SiO2/Si Interfaces Formed Using Oxygen Radicals and Oxygen Molecules Tomoyuki Suwa, Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.) |
Soft-x-ray-excited angle-resolved photoelectron spectroscopy studies on silicon dioxide films formed using oxygen radica... [more] | |
| SDM | 2010-10-22 14:50 |
Miyagi | Tohoku University | Crystallographic orientation dependence of compositional transition and valence band offset at SiO2/Si interface formed using oxygen radicals Tomoyuki Suwa, Yuki Kumagai, Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.), Toyohiko Kinoshita, Takayuki Muro (JASRI) SDM2010-167 |
The chemical and electronic-band structures of SiO2/Si interfaces formed utilizing oxygen radicals were investigated by ... [more] | SDM2010-167 pp.61-65 |
| ED, SDM | 2010-07-02 12:15 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | High Integrity Gate Insulator Films on Atomically Flat Silicon Surface Xiang Li, Rihito Kuroda, Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) ED2010-93 SDM2010-94 |
A low temperature atomically flattening technology for Si(100) wafer is developed. By annealing in ultra pure argon ambi... [more] | ED2010-93 SDM2010-94 pp.183-188 |
| SDM | 2009-10-30 13:00 |
Miyagi | Tohoku University | Recovery from Reactive Ion Etching Damage in SiO2 Films Nobuhito Kawada, Satoshi Nagashima, Toru Ichikawa, Hiroshi Akahori (Toshiba Corp.) SDM2009-129 |
As the MOS device shrinkage progress, the influence of RIE(Reactive Ion Etching) damage becomes remarkable. Especially, ... [more] | SDM2009-129 pp.51-56 |
| SDM | 2009-10-30 15:45 |
Miyagi | Tohoku University | Study on compositional transition layers at SiO2/Si interface formed by radical oxidation Tomoyuki Suwa, Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.), Toyohiko Kinoshita, Takayuki Muro, Yukako Kato (JASRI) SDM2009-134 |
For clarifying the atomic structure of transition layer and valence band offset at Si/SiO2 interface formed by radical o... [more] | SDM2009-134 pp.77-80 |
| SDM | 2008-10-10 15:45 |
Miyagi | Tohoku Univ. | Influence of B and P dopants on SiO2 film characteristics Satoshi Nagashima, Hiroshi Akahori (Toshiba) SDM2008-166 |
In general, the silicon material that has doped impurities such as phosphorus, boron, and arsenic to the diffusion and t... [more] | SDM2008-166 pp.63-68 |
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