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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| MW | 2022-11-16 10:20 |
Nagasaki | Fukue-Bunka-Kaikan (Primary: On-site, Secondary: Online) |
DC-Feedback-Mode Zero-Threshold GaAs HEMT Rectifier/Voltage-Doubler Diode Rectifier for Applying Negative Gate-Bias to Microwave Power Amplifier Taki Nagata, Ryo Ishikawa, Kazuhiko Honjo (UEC)  MW2022-123 |
In recent years, there has been much research on RF energy harvesting, which converts small electromagnetic waves in the... [more] | MW2022-123 pp.77-80 |
| ED, MW | 2022-01-27 15:30 |
Online | Online | [Invited Lecture]
A 28GHz-Band GaN HEMT Doherty Amplifier MMIC Based on Dual-Power-Level Design Technique Ryo Ishikawa, Takuya Seshimo, Yoichiro Takayama, Kazuhiko Honjo (UEC) ED2021-67 MW2021-109 |
In the 5G wireless communication system, a quasi-millimeter wave band such as the 28 GHz band is also used. Doherty powe... [more] | ED2021-67 MW2021-109 pp.28-31 |
| EMT, MW, OPE, EST, MWP, THz, IEE-EMT [detail] | 2020-07-17 14:15 |
Online | Online | Study on Series Connected Harmonic-Tuned GaN HEMT Doherty Power Amplifier for Directly Exciting a Loop Antenna of OAM communication with Balanced Mode Masahiro Nakada, Yoichiro Takayama, Ryo Ishikawa, Kazuhiko Honjo (UEC) EMT2020-24 MW2020-33 OPE2020-19 EST2020-24 MWP2020-24 |
A series-connected harmonic-tuned GaN HEMT Doherty amplifier (DA) has been developed for directly exciting a loop antenn... [more] | EMT2020-24 MW2020-33 OPE2020-19 EST2020-24 MWP2020-24 pp.101-106 |
| MW | 2019-11-14 15:35 |
Okinawa | Minami Daido Villa. Tamokuteki Koryu Center | High-Efficiency GaN HEMT Doherty Power Amplifier Based on Two-Power-Level Impedance Optimization including Harmonic Treatment Takuya Seshimo, Yoichiro Takayama, Ryo Ishikawa, Kazuhiko Honjo (UEC) MW2019-106 |
Further high efficiency and high functionality of power amplifier are required for the next generation wireless communic... [more] | MW2019-106 pp.35-39 |
| EST, MW, EMCJ, IEE-EMC [detail] | 2018-10-18 16:35 |
Aomori | Hachinohe Chamber of Commerce and Industry(Hachinohe city, Aomori) | GaN HEMT Darlington Power Amplifier with Individual Bias Adjustment for High-Efficiency and Low-Distortion Characteristics Atsushi Kitamura, Yoichiro Takayama, Ryo Ishikawa, Kazuhiko Honjo (UEC) EMCJ2018-45 MW2018-81 EST2018-67 |
Multi-transistor configurations are widely applied for improving the performance of transistor amplifiers. In the multi-... [more] | EMCJ2018-45 MW2018-81 EST2018-67 pp.71-75 |
| MW, ICD | 2017-03-02 11:15 |
Okayama | Okayama Prefectural Univ. | Study on 300 GHz CMOS Doubler for Ultrahigh-Speed Wireless Communications Tuan Anh Vu, Kyoya Takano, Kosuke Katayama, VSRao Sasipalli, Minoru Fujishima (Hiroshima University) MW2016-193 ICD2016-123 |
This paper presents a 300 GHz common-source (CS) based doubler suitable for ultrahigh-speed wireless communications. The... [more] | MW2016-193 ICD2016-123 pp.29-34 |
| MW | 2015-12-17 10:00 |
Tokyo | Tokyo Univ. of Science | GaN Voltage-Mode Class D Power Amplifier Using Bootstrap Driver Hideyuki Nakamizo, Kenji Mukai, Shintaro Shinjo (Mitsubishi Electric Corporation), Peter Asbeck (UCSD) MW2015-133 |
We report a GaN Voltage-Mode Class D power amplifier designed for use at 465 MHz of LTE Band 31. The amplifier is fabric... [more] | MW2015-133 pp.1-5 |
| WPT, MW | 2015-04-16 15:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Design of a 60GHz InGaAs HEMT class-F power amplifier with reactive negative feedback Kunihiko Watanabe, Yohtaro Umeda (Tokyo Univ. of Science), Tomohiro Yoshida, Tetsuya Suemitsu (Tohoku Univ.) WPT2015-4 MW2015-4 |
In this paper, InGaAs HEMT 60GHz Class-F power amplifier (PA) with reactive negative feedback is designed and simulated.... [more] | WPT2015-4 MW2015-4 pp.15-19 |
| ED | 2014-12-22 14:35 |
Miyagi | Output power performance of InGaAs/InAlAs HEMT at 90-GHz band Issei Watanabe (NICT), Akira Endoh (NICT/Fujistu Lab.), Akifumi Kasamatsu (NICT), Takashi Mimura (NICT/Fujistu Lab.) ED2014-101 |
InGaAs/InAlAs high electron mobility transistors (HEMTs) are the most promising electron devices not only for future ult... [more] | ED2014-101 pp.15-19 |
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| MW | 2014-11-20 13:25 |
Nagasaki | Nagasaki Univ. | A Broadband Rx Band Noise Reduction Circuit with CMOS Switch for Multi-Band Power Amplifier Yoshifumi Kawamura, Shintaro Shinjo, Kazuhiro Iyomasa, Masakazu Hirobe, Katsuya Kato, Yoshinori Takahashi, Shigeo Yamabe, Kenichi Horiguchi, Morishige Hieda, Koji Yamanaka (Mitsubishi Electric) MW2014-129 |
A broadband Rx band noise reduction circuit for multi-band power amplifiers (PA) with multi chains is presented. The pro... [more] | MW2014-129 pp.33-36 |
| MW | 2014-11-21 11:20 |
Nagasaki | Nagasaki Univ. | A Polar-modulation EPWM Transmitter with a Class-D Amplifier for OFDM Transmission Yoshiharu Iikura, Yohtaro Umeda, Yusuke Kozawa (Tokyo Univ. of Sience) MW2014-140 |
Power amplifiers for wireless communication systems demand high power efficiency and linearity. Of the available types o... [more] | MW2014-140 pp.89-94 |
| MW | 2014-03-05 13:55 |
Ehime | Ehime University | Si/GaAs Hybrid Power Amplifier Modules for WCDMA Handset Terminals Teruyuki Shimura, Kazuya Yamamoto, Hiroaki Seki, Morishige Hieda, Yoshihito Hirano (Mitsubishi Electric) MW2013-218 |
Single-band (SB) and multiband (MB) power amplifier modules (PAM) are demonstrated for WCDMA handsets applications. The ... [more] | MW2013-218 pp.123-128 |
| MW | 2013-12-20 14:20 |
Saitama | Saitama Univ. | Compact Broadband Shunt-Connected Load Type GaN HEMT Doherty Amplifier without Quarter-Wave Impedance Inverting Network Yosuke Iguchi, Yoichiro Takayama, Ryo Ishikawa, Kazuhiko Honjo (UEC) MW2013-173 |
The conventional microwave Doherty power amplifier (DA) consist of a carrier amplifier (CA), a peaking amplifier (PA) an... [more] | MW2013-173 pp.121-126 |
| MW, ED | 2013-01-18 11:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | The study of SSPS GaN amplifier for high-efficiency operation by gate length Yutaro Yamaguchi, Toshiyuki Oishi, Hiroshi Otsuka, Takaaki Yoshioka, Hidetoshi Koyama, Fuminori Samejima, Yoshinori Tsuyama, Koji Yamanaka (Mitsubishi Electric Corp.) ED2012-121 MW2012-151 |
In this paper, GaN HEMT high efficiency amplifier for Space Solar Power Stations/System (SSPS) is presented. 0.25μm gate... [more] | ED2012-121 MW2012-151 pp.49-52 |
| MW | 2012-12-13 13:30 |
Yamanashi | Univ. of Yamanashi | A 1.2-2.0 GHz-band GaAs pHEMT Cascode Power Amplifier MMIC Consisting of Independently Biased Transistors Satoshi Tasaki, Yoichiro Takayama, Ryo Ishikawa, Kazuhiko Honjo (UEC) MW2012-127 |
In cascode circuit configuration, a method to expand circuit design range by setting a DC bias node to a connection poin... [more] | MW2012-127 pp.1-6 |
| MW | 2012-10-18 09:20 |
Tochigi | Utsunomiya Univ. | A Broadband Doherty Power Amplifier without a Quarter-Wave Impedance Inverting Network Shintaro Watanabe, Yoichiro Takayama, Ryo Ishikawa, Kazuhiko Honjo (UEC) MW2012-82 |
The microwave Doherty amplifier consists of a carrier amplifier(CA), a peaking amplifier(PA) and a quarter-wave impedanc... [more] | MW2012-82 pp.7-12 |
| MW, WPT (Joint) |
2012-05-24 14:25 |
Kyoto | Kyoto Univ. | Performance Improvement for W-CDMA Multi Power Amplifier Katsuya Kato, Naoko Matsunaga, Shintaro Shinjo, Kenichi Horiguchi, Morishige Hieda (Mitsubishi Electric) MW2012-10 |
In This paper describes a newly developed triple power mode power amplifier for W-CDMA handset applications. The amplifi... [more] | MW2012-10 pp.7-10 |
| CAS, NLP | 2011-10-21 10:50 |
Shizuoka | Shizuoka Univ. | [Invited Talk]
A 55-to-67GHz Power Amplifier with 13.6% PAE in 65nm standard CMOS Tong Wang, Toshiya Mitomo, Naoko Ono, Osamu Watanabe (Toshiba) CAS2011-52 NLP2011-79 |
A four-stage power amplifier (PA) covering 55-67GHz band is presented. The broadband performance is achieved owing to π... [more] | CAS2011-52 NLP2011-79 pp.113-118 |
| MW | 2009-09-25 15:15 |
Tokyo | Univ. of Electro-Communications | C-band 340-W and X-band 100-W GaN Power Amplifiers with Over 50-% PAE Hisao Shigematsu, Yusuke Inoue, Akihiko Akasegawa, Satoshi Masuda, Masao Yamada, Masahito Kanamura, Toshihiro Ohki, Kozo Makiyama, Naoya Okamoto, Kenji Imanishi, Toshihide Kikkawa, Kazukiyo Joshin, Naoki Hara (Fujitsu Lab.) MW2009-86 |
In this paper, we report an X-band power amplifier with over 100-W output power using 0.25-μm GaN-HEMTs and a C-band pow... [more] | MW2009-86 pp.73-78 |
| RCS, AN, MoNA, SR (Joint) |
2009-03-04 13:00 |
Kanagawa | YRP | Experimental Study on Efficiency of EER Transmitter Using Envelope PWM Satoshi Tsukamoto, Takayuki Umaba, Keizo Inagaki, Makoto Taromaru (ATR) SR2008-88 |
Improving efficiency of radio power amplifier has been an important issue for portable radio terminals since it directly... [more] | SR2008-88 pp.1-6 |
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