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 Results 1 - 6 of 6  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2023-10-13
16:00		 Miyagi Niche, Tohoku Univ. Excimer laser annealing method with the controlled grain size of poly-Si films and TFT characteristics
Shu Nishida, Keita Katayama, Daisuke Nakamura (Kyushu Univ.), Tetsuya Goto (Tohoku Univ.), Hiroshi Ikenoue (Kochi Univ. of Technology) SDM2023-58		 In recent years, Thin ｆilm ｔransistors have been widely used as switching devices in flat panel displays, such as liquid... [more] SDM2023-58
pp.27-33
SDM, OME 2020-04-13
14:00		 Okinawa Okinawaken Seinen Kaikan
(Cancelled, technical report was not issued)		 Metal Source/Drain Structure TFTs using poly-Si Crystallized by Blue Multi-Laser Diode Annealing
Tatsuya Okada, Takashi Noguchi (Univ. Ryukyus) 		We have reported that Blue Multi-Laser Diode Annealing (BLDA) is effective to crystallize Si films with smooth surface. ... [more]
MRIS, ITE-MMS 2013-07-12
15:45		 Tokyo Chuo Univ. 3-Dimensional Phase Change Memory Enabling High Density and High Speed Storage
Takashi Kobayashi, Masaharu Kinoshita, Yoshitaka Sasago (Hitachi) MR2013-11		 A three-dimensional vertical chain-cell-type phase change memory (VCCPCM) for next-generation large-capacity storage was... [more] MR2013-11
pp.31-34
ITE-MMS, MRIS 2009-10-09
10:25		 Fukuoka FUKUOKA traffic center [Invited Talk] Low cost technology of phase change memory with low-contact-resistivity poly-Si selection diode
Yoshitaka Sasago, Masaharu Kinoshita, Takahiro Morikawa, Kenzo Kurotsuchi, Satoru Hanzawa, Toshiyuki Mine, Akio Shima, Yoshihisa Fujisaki, Hiroshi Moriya, Norikatsu Takaura, Kazuyoshi Torii (Hitachi) MR2009-26		 We have fabricated the cross-point phase change memory with a selection diode made of poly-Si. The selection diode was f... [more] MR2009-26
pp.31-35
ICD, SDM 2009-07-17
12:00		 Tokyo Tokyo Institute of Technology Cross-Point phase change memory with 4F2 cell size driven by low-contact resistivity poly-si diode
Yoshitaka Sasago, Masaharu Kinoshita, Takahiro Morikawa, Kenzo Kurotsuchi, Satoru Hanzawa, Toshiyuki Mine, Akio Shima, Yoshihisa Fujisaki, Hitoshi Kume, Hiroshi Moriya, Norikatsu Takaura, Kazuyoshi Torii (Hitachi) SDM2009-112 ICD2009-28		 We have fabricated the cross-point phase change memory with a selection diode made of poly-Si. The selection diode was f... [more] SDM2009-112 ICD2009-28
pp.79-83
SDM, OME 2008-04-11
10:35		 Okinawa Okinawa Seinen Kaikan Electrical activation of heavily doped Si film by crystallization annealing
Takashi Noguchi, Tomoyuki Miyahira, Kenji Kawai (Univ. Ryukyus), Toshiharu Suzuki, Masateru Sato (SEN) SDM2008-4 OME2008-4		 After UV pulsed excimer laser annealing for highly
boron-, or phosphorus dosed Si film, the relationship
between the c... [more]		 SDM2008-4 OME2008-4
pp.17-22
 Results 1 - 6 of 6  /   
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