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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| MRIS, ITE-MMS | 2022-12-08 15:55 |
Ehime | Ehime Univ. + Online (Primary: On-site, Secondary: Online) |
Enhancement of magnetic relaxation constant by phase control of CoFeB/Sb2Te3 Misako Morota, Yuta Saito, Shogo Hatayama, Noriyuki Uchida (AIST)  MRIS2022-23 |
Chalcogenide materials such as Sb_2Te_3 and Bi_2Te_3 are known as phase-change materials, which can reversely change the... [more] | MRIS2022-23 pp.28-31 |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 15:35 |
Online | Online | Phase Change Random Access memory using Cu2GeTe3 Shihori Akane (Ryukoku Univ), Isao Horiuchi (KOA Corp), Mutsumi Kimura (Ryukoku Univ) EID2020-13 SDM2020-47 |
We are conducting research on Phase Change Random Access Memory (PCRAM) using “Cu2GeTe3: Copper-Germanium-Tellurium (CGT... [more] | EID2020-13 SDM2020-47 pp.50-53 |
| NC, MBE (Joint) |
2020-03-06 11:10 |
Tokyo | University of Electro Communications (Cancelled but technical report was issued) |
The Analysis of Associative Memory with Discrete Synapses Ryuta Sasaki, Toru Aonishi (Tokyo Tech) NC2019-108 |
Recently, as the increasing needs of the development of high-speed Ising computing specific hardware, it has been requir... [more] | NC2019-108 pp.187-192 |
| SDM | 2018-10-17 16:35 |
Miyagi | Niche, Tohoku Univ. | [Invited Talk]
Cr2Ge2Te6-Based PCRAM Showing Low Resistance Amorphous and High Resistance Crystalline States Shogo Hatayama, Yuji Sutou, Daisuke Ando, Junichi Koike (Tohoku Univ.) SDM2018-56 |
Phase change random access memory (PCRAM) has attracted much attention as one of next generation non-volatile memory. Ge... [more] | SDM2018-56 pp.21-26 |
| CCS | 2017-03-10 11:30 |
Tokyo | ELSI, TITECH | [Invited Talk]
Nanooptics- and fluidics-based physical implementation of natural intelligence Toshiharu Saiki (Keio Univ.) CCS2016-48 |
We attempt to implement natural intelligence into nanoparticle systems that involves optical coherence, fluidic interact... [more] | CCS2016-48 pp.19-24 |
| ISEC, IT, WBS | 2014-03-11 16:05 |
Aichi | Nagoya Univ., Higashiyama Campus | Constructions of Time-Space Constrained Codes by Flipping 1 Bit Shohei Takeyama, Hiroshi Kamabe (Gifu Univ.) IT2013-91 ISEC2013-120 WBS2013-80 |
Phase-change memory(PCM) is a promising non-volatile solid-state memory. The cell changes between these two states usin... [more] |
IT2013-91 ISEC2013-120 WBS2013-80 pp.233-240 |
| ICD | 2014-01-29 13:00 |
Kyoto | Kyoto Univ. Tokeidai Kinenkan | [Invited Talk]
Next-Generation Solid-State-Drive Design with Semiconductor Non-Volatile Memories Koh Johguchi (Chuo Univ.) ICD2013-135 |
Thanks to the recent fabrication technology development, the bit cost of NAND flash memories has been reduced. Thus, sol... [more] | ICD2013-135 p.83 |
| RECONF | 2013-09-18 17:25 |
Ishikawa | Japan Advanced Institute of Science and Technology | Nonvolatile reconfigurable device development platform using a phase change material Takumi Michida, Kazuya Tanigawa, Tetsuo Hironaka (Hiroshima City Univ.), Kenichi Shimomai, Takashi Ishiguro (TAIYO YUDEN) RECONF2013-25 |
We have studied a development technique of nonvolatile reconfigurable device MPLD using the phase change memory. The de... [more] |
RECONF2013-25 pp.31-36 |
| MRIS, ITE-MMS | 2013-07-12 15:45 |
Tokyo | Chuo Univ. | 3-Dimensional Phase Change Memory Enabling High Density and High Speed Storage Takashi Kobayashi, Masaharu Kinoshita, Yoshitaka Sasago (Hitachi) MR2013-11 |
A three-dimensional vertical chain-cell-type phase change memory (VCCPCM) for next-generation large-capacity storage was... [more] | MR2013-11 pp.31-34 |
| ICD | 2013-04-11 17:30 |
Ibaraki | Advanced Industrial Science and Technology (AIST) | [Panel Discussion]
Future prospects of memory solutions for smart society
-- Can new nonvolatile memories replace SRAM/DRAM/Flash? -- Koji Nii (Renesas Erctronics), Tetsuo Endoh (Tohoku Univ.), Yoshikazu Katoh (Panasonic), Satoru Hanzawa (Hitachi), Kazuhiko Kajigaya (Elpida Memory), Atsushi Kawasumi (Toshiba), Toru Miwa (SanDisk) ICD2013-11 |
(To be available after the conference date) [more] | ICD2013-11 p.53 |
| ICD | 2013-04-12 12:00 |
Ibaraki | Advanced Industrial Science and Technology (AIST) | [Invited Lecture]
An Integrated Variable Positive/Negative Temperature Coefficient Read Reference Generator for MLC PCM/NAND Hybrid 3D SSD Kousuke Miyaji, Koh Johguchi (Chuo Univ.), Kazuhide Higuchi (Univ. of Tokyo), Ken Takeuchi (Chuo Univ.) ICD2013-17 |
An integrated variable temperature coefficient (TC) reference generator for multi-level cell phase change memory (PCM)/N... [more] | ICD2013-17 pp.85-90 |
| ICD, SDM | 2012-08-02 15:55 |
Hokkaido | Sapporo Center for Gender Equality, Sapporo, Hokkaido | Scalable 3-D vertical chain-cell-type phase-change memory with 4F2 poly-Si diodes Masaharu Kinoshita, Yoshitaka Sasago, Hiroyuki Minemura, Yumiko Anzai, Mitsuharu Tai, Yoshihisa Fujisaki, Shuichi Kusaba, Tadao Morimoto, Takashi Takahama, Toshiyuki Mine, Akio Shima, Yoshiki Yonamoto, Takashi Kobayashi (Hitachi) SDM2012-74 ICD2012-42 |
A three-dimensional (3-D) vertical chain-cell-type phase-change memory (VCCPCM) for next-generation large-capacity stora... [more] | SDM2012-74 ICD2012-42 pp.59-63 |
| MW | 2011-12-15 16:00 |
Yamaguchi | Yamaguchi University | Memory Size Reduction Technique for Residual Error correction of a Direct Digital Synthesizer Using Piecewise-Linear Approximation Kenichi Tajima, Kenji Kawakami (Mitsubishi Electric corp.) MW2011-130 |
This paper presents a novel memory size reduction technique for residual error-correction of a direct digital synthesize... [more] | MW2011-130 pp.27-31 |
| SDM | 2011-11-10 13:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Phase-change memoy driven by poly-Si transistor enabling three-dimensional stacking Yoshitaka Sasago, Masaharu Kinoshita, Hiroyuki Minemura, Yumiko Anzai, Mitsuharu Tai, Kenzo Kurotsuchi, Seiichi Morita, Toshikazu Takahashi, Takashi Takahama, Tadao Morimoto, Toshiyuki Mine, Akio Shima, Takashi Kobayashi (Hitachi) SDM2011-117 |
A phase-change memory (PCM) driven by poly-Si MOS transistors was fabricated. The thin phase-change-material layer depos... [more] | SDM2011-117 pp.11-15 |
| SDM | 2011-11-11 14:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Design Technology of stacked Type Chain PRAM Sho Kato, Shigeyoshi Watanabe (SIT) SDM2011-127 |
Stacked type chain PRAM which enables to realize lower cost than NAND flash memory has been newly proposed. Cell structu... [more] | SDM2011-127 pp.69-74 |
| SDM, ICD | 2011-08-26 09:50 |
Toyama | Toyama kenminkaikan | Phase-change memory driven by poly-Si MOS transistor with low cost and high-programming throughput Yoshitaka Sasago, Masaharu Kinoshita, Hiroyuki Minemura, Yumiko Anzai, Mitsuharu Tai, Kenzo Kurotsuchi, Seiichi Morita, Toshikazu Takahashi, Takashi Takahama, Tadao Morimoto, Toshiyuki Mine, Akio Shima, Takashi Kobayashi (Hitachi) SDM2011-85 ICD2011-53 |
A phase-change memory (PCM) driven by poly-Si MOS transistors was fabricated. The thin phase-change-material layer depos... [more] | SDM2011-85 ICD2011-53 pp.75-78 |
| SDM | 2011-07-04 17:00 |
Aichi | VBL, Nagoya Univ. | Design of stacked NOR type PRAM with phase change channel transistor Sho Kato, Shigeyoshi Watanabe (Shonan Institute of Technology) SDM2011-69 |
In this paper stacked NOR type PRAM with phase change channel transistor has been newly proposed. Fast access time compe... [more] | SDM2011-69 pp.109-113 |
| ICD | 2011-04-18 15:20 |
Hyogo | Kobe University Takigawa Memorial Hall | [Invited Talk]
Trend in Phase Change Memory and activity in TIA Norikatsu Takaura (LEAP) ICD2011-6 |
This paper reports on trend in phase change memory (PCM) and research activity in Tsukuba Innovation Arena (TIA) . We di... [more] | ICD2011-6 pp.33-36 |
| ITE-MMS, MRIS | 2009-10-09 10:25 |
Fukuoka | FUKUOKA traffic center | [Invited Talk]
Low cost technology of phase change memory with low-contact-resistivity poly-Si selection diode Yoshitaka Sasago, Masaharu Kinoshita, Takahiro Morikawa, Kenzo Kurotsuchi, Satoru Hanzawa, Toshiyuki Mine, Akio Shima, Yoshihisa Fujisaki, Hiroshi Moriya, Norikatsu Takaura, Kazuyoshi Torii (Hitachi) MR2009-26 |
We have fabricated the cross-point phase change memory with a selection diode made of poly-Si. The selection diode was f... [more] | MR2009-26 pp.31-35 |
| ICD, SDM | 2009-07-17 12:00 |
Tokyo | Tokyo Institute of Technology | Cross-Point phase change memory with 4F2 cell size driven by low-contact resistivity poly-si diode Yoshitaka Sasago, Masaharu Kinoshita, Takahiro Morikawa, Kenzo Kurotsuchi, Satoru Hanzawa, Toshiyuki Mine, Akio Shima, Yoshihisa Fujisaki, Hitoshi Kume, Hiroshi Moriya, Norikatsu Takaura, Kazuyoshi Torii (Hitachi) SDM2009-112 ICD2009-28 |
We have fabricated the cross-point phase change memory with a selection diode made of poly-Si. The selection diode was f... [more] | SDM2009-112 ICD2009-28 pp.79-83 |
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