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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| LQE, ED, CPM | 2023-11-30 13:30 |
Shizuoka | Fabrication of GaN HBTs using a quaternary AlGaInN emitter and a GaInN base Masaya Takimoto, Akira Mase, Kojima tomoki, Egawa Takashi, Miyoshi Makoto (Nagoya Inst.Tech.)  ED2023-15 CPM2023-57 LQE2023-55 |
Heterojunction bipolar transistors (HBTs) using GaN-based semiconductors are considered to be promising next-generation ... [more] | ED2023-15 CPM2023-57 LQE2023-55 pp.6-10 |
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| LQE, ED, CPM | 2023-11-30 15:20 |
Shizuoka | Formation of p-type GaN by Mg thermal diffusion and challenges for device applications Yuta Itoh, Hirotaka Watanabe, Manato Deki, Shugo Nitta, Atsushi Tanaka, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) ED2023-19 CPM2023-61 LQE2023-59 |
Establishment of a localized p-type doping technique is essential to realize vertical GaN power devices. However, in Mg ... [more] | ED2023-19 CPM2023-61 LQE2023-59 pp.25-30 |
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| CPM, LQE, ED | 2016-12-13 09:05 |
Kyoto | Kyoto University | MOCVD growth of rough-surface p-GaN and its application to InGaN/GaN MQW solar cells Takuma Mori, Makoto Miyoshi, Takashi Egawa (NIT) ED2016-68 CPM2016-101 LQE2016-84 |
Nitride-based solar cells with an InGaN absorption layer is promising as nontoxic and high efficiency solar cell devices... [more] | ED2016-68 CPM2016-101 LQE2016-84 pp.55-59 |
| ED | 2015-07-24 13:15 |
Ishikawa | IT Business Plaza Musashi 5F | Electrical characteristics of N-polar p-type GaN Schottky contacts Toshichika Aoki (Univ. of Fukui), Tomoyuki Tanikawa, Ryuji Katayama, Takashi Matsuoka (Tohoku Univ.), Kenji Shiojima (Univ. of Fukui) ED2015-36 |
Electrical characteristics of N-polar p-GaN Schottky contacts by using current-voltage (I-V), capacitance-voltage (C-V) ... [more] | ED2015-36 pp.1-4 |
| CPM, ED, SDM | 2014-05-29 14:00 |
Aichi | P - GaN by Mg Ion Implantation for Power Device Applications Zheng Sun, Marc Olsson (Nagoya Univ.), Tsutomu Nagayama (Nissin Ion Equipment), Yoshio Honda, Hiroshi Amano (Nagoya Univ.) ED2014-40 CPM2014-23 SDM2014-38 |
We realized p-GaN by high temperature Mg ion implantation with pre-sputter(PS) technique. Due to the new PS technique an... [more] | ED2014-40 CPM2014-23 SDM2014-38 pp.109-112 |
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| CPM, LQE, ED | 2013-11-28 15:10 |
Osaka | AC Operation of Low-Mg-Doped p-GaN Schottky Diodes Kenji Shiojima, Toshichika Aoki (Univ. of Fukui), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Metal) ED2013-72 CPM2013-131 LQE2013-107 |
Current-voltage (I-V) characteristics with variations of voltage sweep speed (vsweep) and changing sweep directions, and... [more] | ED2013-72 CPM2013-131 LQE2013-107 pp.39-42 |
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| ED | 2012-07-26 15:25 |
Fukui | Fukui University | Effect of ICP Etching on p-type GaN Schottky Contacts Toshifumi Takahashi (Univ. of Fukui), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Cable), Kazuki Nomoto (Univ. of Notre Dame), Kenji Shiojima (Univ. of Fukui) ED2012-45 |
Low-Mg-doped p-GaN Schottky contacts were applied to evaluate inductive coupled plasma (ICP) etching damages. The ICP ... [more] | ED2012-45 pp.21-24 |
| ED | 2012-07-26 15:50 |
Fukui | Fukui University | Electrical Characteristics of Surface Stoichiometry Controlled p-GaN Schottky Contacts Toshifumi Takahashi (Univ. of Fukui), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Cable), Takashi Kajiwara, Satoru Tanaka (Kyushu Univ.), Kenji Shiojima (Univ. of Fukui) ED2012-46 |
Experimental results of electrical characteristics of Au/Ni Schottky contacts formed on three kinds of p-GaN layers, whi... [more] | ED2012-46 pp.25-30 |
| ED | 2008-06-13 13:25 |
Ishikawa | Kanazawa University | I-V and C-V characteristics of p-GaN schottky contacts
-- Carrier concentration and metal work function dependences -- Yoshihiro Fukushima, Keita Ogisu, Masaaki Kuzuhara, Kenji Shiojima (Fukui Univ.) ED2008-23 |
Carrier concentration (P) and metal work function dependences of Schottky barrier height (qB) were measured from... [more] | ED2008-23 pp.5-10 |
| CPM, ED, SDM | 2008-05-16 10:50 |
Aichi | Nagoya Institute of Technology | On-resistance and Breakdown Voltage of Enhancement-Mode AlGaN/GaN Junction HFET Using p-GaN Gate Contact Ryohei Nega, Katsutoshi Mizuno, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.) ED2008-13 CPM2008-21 SDM2008-33 |
This paper reports normally-off mode nitride-based field-effect transistor using p-type gate contact. In order to realiz... [more] | ED2008-13 CPM2008-21 SDM2008-33 pp.61-66 |
| ED | 2007-06-16 09:30 |
Toyama | Toyama Univ. | [Invited Talk]
Current transport mechanism of metal/p-GaN contacts Kenji Shiojima (Fukui Univ.) ED2007-41 |
This paper will review the basic understanding of current transport mechanism of metal/p-GaN contacts. We have demonstr... [more] | ED2007-41 pp.57-60 |
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