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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| OME | 2022-12-19 16:10 |
Tokyo | Katsushika Campus | Conductivity and thermal stability of F--doped B-type carbonated apatite-based solid electrolyte Rei Akamatsu, Yumi Tanaka (Tokyo Univ. of Science)  OME2022-49 |
Motivated by the practical application of FCA ((Ca10-x Na2x/3)[(PO4)6-x(CO3)x][(OH)2-(x/3)-y F y]) as a solid electrolyt... [more] | OME2022-49 pp.30-32 |
| CPM, ED, LQE | 2022-11-24 11:35 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Semiconducting properties of electrochemically deposited Ni(OH)2 thin films Masahide Shimura, Koji Abe (Nitech) ED2022-28 CPM2022-53 LQE2022-61 |
Abstract Metal hydroxides are important inorganic materials used as flame retardants and precursors for metal oxide syn... [more] | ED2022-28 CPM2022-53 LQE2022-61 pp.23-26 |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 14:30 |
Online | Online | [Special Invited Talk]
Defects control in oxide semiconductors at low-temperature and its application to flexible devices Yusaku Magari, Mamoru Furuta (Kochi Univ. of Technol.) EID2020-10 SDM2020-44 |
High-performance In–Ga–Zn–O (IGZO) Schottky diodes (SDs) were fabricated using hydrogenated IGZO (IGZO:H) at a maximum p... [more] | EID2020-10 SDM2020-44 pp.37-41 |
| EE, CPM, OME | 2018-11-22 09:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Effect of anion composition on oxide ion conductionof F-doped B-type carbonatedapatite Jun Takahata, Yasuhito Sugano, Yumi Tanaka (TUS) EE2018-34 CPM2018-62 OME2018-22 |
Based on our previous finding that the B-type carbonate apatite (BCA; [Ca10-xNa2x/3][(PO4)6-x(CO3)x] [(H2O)x(OH)2-x/3]) ... [more] | EE2018-34 CPM2018-62 OME2018-22 pp.47-49 |
| OME, SDM | 2017-04-21 14:05 |
Kagoshima | Tatsugochou Shougaigakushuu Center | Charge storage behavior of zirconia ceramics under DC electric field
-- Preparation of Y-TZP bioceramics with enhanced LTD durability -- Yumi Tanaka (Tokyo Univ. of Sci.), Hiroyuki Hara (Kyushu Univ.) SDM2017-8 OME2017-8 |
Yttria-stabilized tetragonal zirconia polycrystal (Y-TZP) is an important load-bearing bioceramic. However, a phenomenon... [more] | SDM2017-8 OME2017-8 pp.35-39 |
| OME | 2015-12-10 15:40 |
Tokyo | PORTA Kagurazaka | [Invited Talk]
Anisotropic behavior of ionic conduction in restacked oxide nanosheets Shinya Suzuki, Masaru Miyayama (UTokyo) OME2015-79 |
Thin films of lithium-ion-exchanged-montmorillonite (Li-MMT) nanosheets were prepared and their ionic conductivities wer... [more] | OME2015-79 pp.25-27 |
| ED | 2014-08-01 15:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. B3-1 | Band offset at Al2O3/β-Ga2O3 Heterojunctions Takafumi Kamimura (NICT), Kohei Sasaki (Tamura Corp.), Man Hoi Wong, Daivasigamani Krishnamurthy (NICT), Akito Kuramata (Tamura Corp.), Takekazu Masui (Koha Co., Ltd.), Shigenobu Yamakoshi (Tamura Corp.), Masataka Higashiwaki (NICT) ED2014-60 |
The band alignment of Al2O3/n-Ga2O3 (010) was investigated by x-ray photoelectron spectroscopy (XPS). With a band gap of... [more] | ED2014-60 pp.41-46 |
| SDM, ED (Workshop) |
2012-06-27 11:30 |
Okinawa | Okinawa Seinen-kaikan | [Invited Talk]
Gate Stack Technologies for Silicon Carbide Power MOS Devices Takuji Hosoi, Takashi Kirino, Yusuke Uenishi, Daisuke Ikeguchi, Atthawut Chanthaphan (Osaka Univ.), Akitaka Yoshigoe, Yuden Teraoka (JAEA), Shuhei Mitani, Yuki Nakano, Takashi Nakamura (ROHM), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) |
Silicon carbide (SiC) is a promising material for high-power electronic devices. Although SiO$_2$ dielectric film can be... [more] | |
| CPM | 2011-10-27 09:55 |
Fukui | Fukui Univ. | Preparation of SiC MOS structure using SiO2 Layer deposited by Thermal Decomposition of TEOS Mitsunori Hemmi, Yuya Iguchi, Takashi Sakai, Akihiko Sugita, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) CPM2011-119 |
A oxide layer was deposited on a SiC surface by thermal chemical vapor deposition as a source material TEOS. After the d... [more] | CPM2011-119 pp.51-54 |
| SDM | 2009-12-04 11:20 |
Nara | NAIST | Characteristics of hot hole injection, trapping, and detrapping in gate oxide of poly-Si TFTs Yoshinari Kamakura (Osaka Univ.), Takashi Himukashi (Osaka Univ./Kansai Univ.), Hiroshi Tsuji, Kenji Taniguchi (Osaka Univ.) SDM2009-157 |
The hysteresis observed in the transfer characteristics of n-channel poly-Si TFTs are experimentally investigated and po... [more] | SDM2009-157 pp.35-38 |
| EMD | 2009-11-20 14:50 |
Tokyo | Nippon Institute of Technology, Kanda Campus, Tokyo, Japan | Growth of oxide film on tin plated surface of connector contacts and it effect on contact resistance Yuya Nabeta, Yasushi Saitoh, Shigeru Sawada (Mie Univ.), Yasuhiro Hattori (ANTech), Terutaka Tamai (Mie Univ.) EMD2009-100 |
Tin plating has been applied widely to electrical connector contacts to save the cost. However, the tin plated surfaces ... [more] | EMD2009-100 pp.133-136 |
| ED | 2009-04-23 15:30 |
Miyagi | Tohoku Univ. | Ferroelectric-Gate Thin-Film-Transistor Memory Using Epitaxially Grown Composite-Oxide-Film Yukihiro Kaneko, Hiroyuki Tanaka, Yoshihisa Kato, Yasuhiro Shimada (Panasonic Corp.) ED2009-5 |
We have developed a ferroelectric-gate thin-film transistor (FeTFT) composed of heteroepitaxially stacked oxide material... [more] | ED2009-5 pp.17-22 |
| EMD | 2009-03-06 16:35 |
Tokyo | Kougakuin Univ. | Growth Law of the Oxide Film Formed on the Tin Plated Contact Surface and Its Contact Resistance Characteristic
-- Ellipsometric Study -- Yuya Nabeta, Terutaka Tamai, Yasushi Saitoh, Shigeru Sawada, Kazuo Iida (Mie Univ.), Yasuhiro Hattori (AN Technorogies) EMD2008-146 |
Tin plated contacts has been applied widely to electrical contacts of electromechanical devices as well as gold plated c... [more] | EMD2008-146 pp.49-52 |
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