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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ICD | 2024-04-11 13:00 |
Kanagawa | (Primary: On-site, Secondary: Online) |
NanoBridge Based Nonvolatile Memory Macro for High-temperature Operation Ryusuke Nebashi, Koichiro Okamoto, Toshitsugu Sakamoto, Munehiro Tada (NBS)  ICD2024-4 |
NanoBridge (NB) is a kind of resistive-change device. We have developed NB-based memory macro with stable operations at ... [more] | ICD2024-4 pp.12-16 |
| SDM | 2023-10-13 14:30 |
Miyagi | Niche, Tohoku Univ. | [Invited Talk]
Determination of charge centroid location and energy depth of charge carriers trapped in silicon nitride charge-trap layers Kiyoteru Kobayashi (Tokai Univ.) SDM2023-56 |
Metal-oxide-nitride-oxide-semiconductor (MONOS) field-effect transistors have been employed for memory cells in three-di... [more] | SDM2023-56 pp.13-20 |
| ICD | 2023-04-10 09:55 |
Kanagawa | (Primary: On-site, Secondary: Online) |
[Invited Lecture]
Nonvolatile Storage Cells Using FiCC for IoT Processors with Intermittent Operations Yuki Abe, Kazutoshi Kobayashi (KIT), Jun Shiomi (Osaka Univ.), Hiroyuki Ochi (Ritsumeikan Univ.) ICD2023-1 |
Energy harvesting is a key technology to supply power for Internet of Things (IoT) devices. Computing devices for IoTs m... [more] | ICD2023-1 pp.1-6 |
| ICD | 2023-04-11 14:10 |
Kanagawa | (Primary: On-site, Secondary: Online) |
[Invited Talk]
NanoBridge Technology for Embedded Nonvolatile Memory Ryusuke Nebashi, Koichiro Okamoto, Toshitsugu Sakamoto, Munehiro Tada (NBS) ICD2023-11 |
NanoBridge (NB) is a kind of electrochemical resistive-change device. NBs are integrated by only two additional masks in... [more] | ICD2023-11 pp.24-28 |
| HWS, VLD | 2023-03-02 09:55 |
Okinawa | (Primary: On-site, Secondary: Online) |
Implementation of power-outage tolerant VLSI system using asynchronous circuits Masashi Imai (Hirosaki Univ.) VLD2022-86 HWS2022-57 |
Re-initialization free systems which contain nonvolatile memory have been proposed in order to cope with power-outage. H... [more] | VLD2022-86 HWS2022-57 pp.79-84 |
| VLD, HWS [detail] | 2022-03-07 14:05 |
Online | Online | Measurement Results of Nonvolatile Flip-Flops Using FiCC for IoT Processors with Intermittent Operations Yuki Abe, Kazutoshi Kobayashi (KIT), Hiroyuki Ochi (Ritsumeikan Univ.) VLD2021-85 HWS2021-62 |
In recent years, with the spread of the Internet of Things (IoT) and mobile devices, low power consumption of processors... [more] | VLD2021-85 HWS2021-62 pp.45-50 |
| OME | 2022-01-07 14:05 |
Osaka | CENTRAL ELECTRIC CLUB | Device characteristics of organic floating-gate memories based on n-channel polymer transistors Naoyuki Nishida, Reitaro Hattori, Takashi Nagase, Takaki Adachi, Kazuyoshi Morikawa, Takashi Kobayashi, Takashi Kobayashi (Osaka Pref. Univ.) OME2021-48 |
Use of a charge storage layer composed of a polymer insulator of PMMA and a soluble small-molecule semiconductor of TIPS... [more] | OME2021-48 pp.4-8 |
| VLD, DC, RECONF, ICD, IPSJ-SLDM (Joint) [detail] |
2021-12-01 10:35 |
Online | Online | Energy saving in a multi-context coarse grained reconfigurable array with non-volatile flip-flops Aika Kamei, Takuya Kojima, Hideharu Amano (Keio Univ.), Daiki Yokoyama, Hisato Miyauchi, Kimiyoshi Usami (SIT), Keizo Hiraga, Kenta Suzuki (SSS) VLD2021-20 ICD2021-30 DC2021-26 RECONF2021-28 |
IoT and edge-computing have been attracting much attention and demands for power efficiency as well as high performance ... [more] | VLD2021-20 ICD2021-30 DC2021-26 RECONF2021-28 pp.19-24 |
| VLD, DC, RECONF, ICD, IPSJ-SLDM (Joint) [detail] |
2020-11-17 09:30 |
Online | Online | Design of Nonvolatile SRAM Using SONOS Flash Cell and its Evaluation by Circuit Simulation Takaki Urabe, Koji Nii, Kazutoshi Kobayashi (KIT) VLD2020-11 ICD2020-31 DC2020-31 RECONF2020-30 |
In this paper, we designed a layout of a nonvolatile SRAM memory using the SONOS Flash memory, and investigated its char... [more] | VLD2020-11 ICD2020-31 DC2020-31 RECONF2020-30 pp.1-5 |
| VLD, DC, CPSY, RECONF, ICD, IE, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC (Joint) [detail] |
2019-11-14 15:05 |
Ehime | Ehime Prefecture Gender Equality Center | Design of an MTJ-Based Multiply-Accumulate Operation Circuit for an Energy-Efficient Binarized Neural Networks Tomoki Chiba, Masanori Natsui, Takahiro Hanyu (Tohoku Univ.) ICD2019-32 IE2019-38 |
In this paper, we propose a design of a computational unit for multiply-accumulate (MAC) operations and activation funct... [more] | ICD2019-32 IE2019-38 pp.19-24 |
| SDM | 2019-01-29 13:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Interface Dipole Modulation Memory based on Multi-stacked HfO2/SiO2 MOS Structure Noriyuki Miyata (AIST), Jun Nara, Takahiro Yamasaki (NIMS), Kyoko Sumita (AIST), Ryousuke Sano, Hiroshi Nohira (TCU) SDM2018-87 |
We report an electric-field-induced interface dipole modulation (IDM) in HfO2/1-ML TiO2/SiO2 MOS stack structures. Exper... [more] | SDM2018-87 pp.27-30 |
| VLD, DC, CPSY, RECONF, CPM, ICD, IE, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC (Joint) [detail] |
2018-12-05 11:00 |
Hiroshima | Satellite Campus Hiroshima | [Keynote Address]
Challenge of Post CMOS Circuit Technologies for AI Hardware Takahiro Hanyu (Tohoku Univ.) |
Recently, it is impartant that the impact of artificial intelligence (AI) is being widely understood in several applicat... [more] | |
| SDM | 2018-10-17 16:05 |
Miyagi | Niche, Tohoku Univ. | Fabrication process of Hf-based MONOS nonvolatile memory with Si(100) surface flattening process Sohya Kudoh, Yusuke Horiuchi, Shun-ichiro Ohmi (Tokyo Tech.) SDM2018-55 |
We have reported nonvolatile memory characteristics of Hf-based MONOS diodes were improved by using atomically flat Si(1... [more] | SDM2018-55 pp.15-19 |
| ICD | 2018-04-20 09:55 |
Tokyo | [Invited Lecture]
A new core transistor equipped with NVM functionality without using any emerging memory materials Yasuhiro Taniguchi, Shoji Yoshida, Owada Fukuo, Yutaka Shinagawa, Hideo Kasai (Floadia), Lin Jia You, Wei I Huan (PTC), Daisuke Okada, Koichi Nagasawa, Kosuke Okuyama (Floadia) ICD2018-7 |
A tri-gate core transistor which has nonvolatile memory [NVM] functionality in midsection of a logic transistor gate was... [more] | ICD2018-7 pp.23-27 |
|
| OME | 2017-11-17 13:00 |
Osaka | Osaka Univ. Nakanoshima Center | [Invited Talk]
Device characteristics of solution-processed top-gate organic transistors and development of nonvolatile organic memory devices Takashi Nagase, Shoya Sanda, Fumiya Shiono, Takashi Kobayashi, Hiroyoshi Naito (Osaka Pref. Univ.) OME2017-27 |
We report that the use of a top-gate/bottom-contact (TG/BC) configuration in solution-processed organic field-effect tra... [more] | OME2017-27 pp.1-6 |
| VLD, DC, CPSY, RECONF, CPM, ICD, IE, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC (Joint) [detail] |
2017-11-07 09:25 |
Kumamoto | Kumamoto-Kenminkouryukan Parea | Routing method considering programming constraint of reconfigurable device using via-switch crossbars Kosei Yamaguchi, Takashi Imagawa, Hiroyuki Ochi (Ritsumeikan Univ.) VLD2017-39 DC2017-45 |
This report proposes a new routing method that considers constraint on the programming of switches in the reconfigurable... [more] | VLD2017-39 DC2017-45 pp.73-78 |
| SDM | 2017-10-25 15:20 |
Miyagi | Niche, Tohoku Univ. | Si surface atomically flattening process with chemical oxide passivation for Ar/H2 annealing and Hf-based MONOS device application Sohya Kudoh, Shun-ichiro Ohmi (Tokyo Tech.) SDM2017-52 |
MONOS type nonvolatile memory is a promising candidate to replace the floating gate type nonvolatile memory (NVM). It w... [more] | SDM2017-52 pp.15-19 |
| MRIS, ITE-MMS | 2017-10-19 13:45 |
Niigata | Kashiwazaki energy hall, Niigata | [Invited Talk]
Analog spintronics devices and its application to artificial neural networks Hisanao Akima, William Borders, Shunsuke Fukami, Satoshi Moriya, Shouta Kurihara, Aleksandr Kurenkov, Yoshihiko Horio, Shigeo Sato, Hideo Ohno (Tohoku Univ.) MR2017-18 |
Developing dedicated integrated circuits operating with low power consumption is indispensable to realize a large scale ... [more] | MR2017-18 pp.7-12 |
| MRIS, ITE-MMS | 2017-10-19 14:45 |
Niigata | Kashiwazaki energy hall, Niigata | Domain wall motion control in the Co/Ni-nanowire-based magnetic shift register Tsuyoshi Kondo, Takuya Shimada, Masaki Kado, Michael Quinsat, Yasuaki Ootera, Nobuyuki Umetsu, Susumu Hashimoto, Shiho Nakamura (Toshiba) MR2017-19 |
We have been studying on the magnetic shift register(MSR) using magnetic nanowire, as one of the candidates for the ultr... [more] | MR2017-19 pp.13-16 |
| ICD | 2017-04-21 11:00 |
Tokyo | [Invited Lecture]
Highly reliable Cu atom switch using thermally tolerant Polymer-solid Electrolyte (TT-PSE) for Nonvolatile Programmable Logic Koichiro Okamoto, Munehiro Tada, Naoki Banno, Noriyuki Iguchi, Hiromitsu Hada, Toshitsugu Sakamoto, Makoto Miyamura, Yukihide Tsuji, Ryusuke Nebashi, Ayuka Morioka, Xu Bai, Tadahiko Sugibayashi (NEC) ICD2017-13 |
Robust Cu atom switch with higher operation reliability has been developed featuring an over-400C thermally tolerant pol... [more] | ICD2017-13 pp.67-72 |
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