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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| MWP (2nd) |
2018-08-06 | Shimane | Shimane Prefectural Convention Center (Matsue City) | [Poster Presentation]
Microwave signal detection based on nonpolarimetric frequency down conversion Haruhiko Takeuchi, Shintaro Hisatake (Gifu Univ) |
Electric field measurement in the microwave band was carried out based on the nonpolarimetric electrooptic frequency dow... [more] | |
| CPM | 2016-11-19 11:35 |
Ishikawa | Optical properties of non-polar ZnO films grown by catalytic reaction-assisted chemical vapor deposition Munenori Ikeda, Ryouich Tajima, Yuki Adachi, Yasuhiro Tamayama, Ariyuki Kato, Kanji Yasui (Nagaoka Univ. Technol.)  CPM2016-73 |
Non-polar ZnO films were grown on r-plane sapphire substrates through a reaction between dimethylzinc and high-temperatu... [more] | CPM2016-73 pp.59-63 |
|
| PEM (2nd) |
2015-11-27 - 2015-11-28 |
Kyoto | Doshisha Univ. | Evaluation of DAST Crystals for Nonpolarimetric Self-heterodyne Electro-optic Detection of Terahertz Waves Hai Huy Nguyen Pham, Shintaro Hisatake (Osaka Univ.), Hirohisa Uchida (Arkray Inc.), Tadao Nagatsuma (Osaka Univ.) |
The use of a DAST crystal, an organic electro-optic (EO) material with a high EO coefficient, in a nonpolarimetric self-... [more] | |
| MWP | 2015-11-27 15:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Phase Measurement of Millimeter Wave based on Unlocked Electro-optic Detection Technique Hikaru Nakajima, Hisatake Shintaro, Tadao Nagatsuma (Osaka Univ.) MWP2015-56 |
We propose a new system that can measure amplitude and phase information of electric field without external locking betw... [more] | MWP2015-56 pp.21-25 |
| LQE, ED, CPM | 2014-11-27 13:15 |
Osaka | Emission characteristics of InGaN-MQW structures on m-plane GaN substrates Kaori Kurihara, Satoru Nagao (Mitsubishi Chemical), Atsushi Yamaguchi (Kanazawa Inst. of Tech.) ED2014-77 CPM2014-134 LQE2014-105 |
We have investigated the optical characteristics of InGaN QWs on m-plane GaN substrates in order to understand the reaso... [more] | ED2014-77 CPM2014-134 LQE2014-105 pp.19-22 |
|
| LQE, ED, CPM | 2014-11-27 13:40 |
Osaka | Optical Polarization Properties in non-c-oriented-InGaN Quantum Wells Shigeta Sakai, Atsushi Yamaguchi (Kanazawa Inst. of Tech.), Kaori Kurihara, Satoru Nagao (Mitsubishi Chemical) ED2014-78 CPM2014-135 LQE2014-106 |
Optical polarization properties are very important factors for structural design of optoelectronic device using non- c-o... [more] | ED2014-78 CPM2014-135 LQE2014-106 pp.23-26 |
|
| ED, LQE, CPM | 2012-11-30 09:30 |
Osaka | Osaka City University | Selective MOVPE growth on nonpolar GaN substrates Daiki Jinno, Shunsuke Okada, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Yuuki Enatsu, Satoru Nagao (Mitsubishi Chemical Corp.) ED2012-77 CPM2012-134 LQE2012-105 |
The selective-area growth (SAG) on nonpolar (10-10) (20-21) (20-2-1) GaN substrates by MOVPE was demonstrated, and the f... [more] | ED2012-77 CPM2012-134 LQE2012-105 pp.51-54 |
| CPM, LQE, ED | 2010-11-11 14:30 |
Osaka | A Comprehensive Understanding of Previously-Reported Polarization Properties in Nonpolar and Semipolar InGaN Quantum Wells Atsushi Yamaguchi (Kanazawa Inst. Tech.), Kazunobu Kojima (Kyoto Univ.) ED2010-148 CPM2010-114 LQE2010-104 |
A new method to obtain material parameters inversely from measured polarization properties has been developed, and we an... [more] | ED2010-148 CPM2010-114 LQE2010-104 pp.29-32 |
|
| ED, LQE, CPM | 2009-11-19 13:55 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | Anisotropy in structural and optical properties of nonpolar group III nitrides grown on ZnO substrates Atsushi Kobayashi, Kazuma Shimomoto, Kohei Ueno, Tomofumi Kajima, Jitsuo Ohta (Univ. of Tokyo), Hiroshi Fujioka, Masaharu Oshima (Univ. of Tokyo/JST) ED2009-137 CPM2009-111 LQE2009-116 |
ZnO has been regarded as an ideal substrate for epitaxial growth of nonpolar group III nitride films because its structu... [more] | ED2009-137 CPM2009-111 LQE2009-116 pp.43-46 |
| LQE, ED, CPM | 2008-11-27 10:55 |
Aichi | Nagoya Institute of Technology | Growth and characterization of nonpolar and semipolar (Al,In,Ga)N films on ZnO substrates Atsushi Kobayashi, Kohei Ueno, Kazuma Shimomoto, Jitsuo Ohta, Hiroshi Fujioka, Masaharu Oshima (Univ. of Tokyo), Hidetaka Amanai, Satoru Nagao, Hideyoshi Horie (Mitsubishi Chemical Group Science and Technology Research Center) ED2008-155 CPM2008-104 LQE2008-99 |
We have succeeded in epitaxial growth of high-quality nonpolar and semipolar (Al,In,Ga)N films on ZnO substrates using r... [more] | ED2008-155 CPM2008-104 LQE2008-99 pp.17-20 |
| ED, MW | 2006-01-19 14:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Normally-off Operation of AlGaN/GaN Heterojunction Field Effect Transistors on Non-polar (11-20) plane Masayuki Kuroda, Hidetoshi Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka (Matsushita Electric) |
GaN-based material is attractive for future power devices with high breakdown voltage and low on-state resistance becaus... [more] | ED2005-205 MW2005-159 pp.35-39 |
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