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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, SDM, CPM | 2021-05-27 14:10 |
Online | Online | Evaluation of I-V Characteristics of Zr/ZrOx/Pt Structure for Resistive Random Access Memory Yuki Kawai, Masaru Sato, Mayumi B. Takeyama (Kitami Inst. of Tech.)  ED2021-3 CPM2021-3 SDM2021-14 |
Resistive random access memory is attracting attention as the next generation non-volatile memory. However, there are v... [more] | ED2021-3 CPM2021-3 SDM2021-14 pp.11-14 |
| CPM | 2021-03-03 13:45 |
Online | Online | Electrical properties of Zr/ZrO2/Pt stacked structure with/without thin CuOx film Yuki Kawai, Kazuki Yamamoto, Yu Otsuka, Masaru Satou, Mayumi B.Takeyama (Kitami Inst. of Tech.) CPM2020-69 |
In recent years, a Resistive Random Access Memory (RRAM) has been attracting attention as one of the most promising next... [more] | CPM2020-69 pp.52-54 |
| SDM | 2020-01-28 15:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Future of Non-Volatile Memory - From Storage to Computing Kazunari Ishimaru (kioxia) SDM2019-87 |
More than thirty years passed since the first NAND flash memory was presented at the IEDM. The NAND flash memory expande... [more] | SDM2019-87 p.19 |
| SDM | 2016-06-29 11:15 |
Tokyo | Campus Innovation Center Tokyo | Fabrication of ferroelectric nanowire capacitors
-- Towards high-density non-volatile ferroelectric memories -- Hironori Fujisawa, Masaru Shimizu, Seiji Nakashima (Univ. Hyogo) SDM2016-35 |
We demonstrated fabrication of ZnO/(Hf,Zr)O_2/ZnO nanowire capacitors fabricated by metalorganic chemical vapor depositi... [more] | SDM2016-35 pp.15-19 |
| RECONF | 2016-05-19 17:30 |
Kanagawa | FUJITSU LAB. | [Invited Talk]
Overviews on key technologies to substantialize 'IoT society' Toshihiro Matsui, Hisashi Sekine, Hideki Hayashi, Hiroaki Ohkubo, Hirotaka Sunaguchi, Naoyuki Matsuo, Yoshitatsu Sato (NEDO TSC) RECONF2016-16 |
Regarding non-volatile memories, sensors, embedded software, and cyber security as the key components in the coming IoT ... [more] | RECONF2016-16 pp.77-82 |
| VLD, CPSY, RECONF, IPSJ-SLDM, IPSJ-ARC [detail] | 2016-01-21 14:15 |
Kanagawa | Hiyoshi Campus, Keio University | Write-Reduction using Encoding data on MLC for Non-Volatile Memories Masashi Tawada, Shinji Kimura, Masao Yanagisawa, Nozomu Togawa (Waseda Univ.) VLD2015-107 CPSY2015-139 RECONF2015-89 |
There is a movement to use the non-volatile memory to the important main memory in von Neumann computer. Non-volatile m... [more] |
VLD2015-107 CPSY2015-139 RECONF2015-89 pp.221-225 |
| VLD, DC, IPSJ-SLDM, CPSY, RECONF, ICD, CPM (Joint) [detail] |
2015-12-03 15:00 |
Nagasaki | Nagasaki Kinro Fukushi Kaikan | A Circuit Area-Aware Bit-Write Reduction Code Generation for Non-Volatile Memories Masashi Tawada, Shinji Kimura, Masao Yanagisawa, Nozomu Togawa (Waseda Univ.) VLD2015-76 DC2015-72 |
Recently, due to low leakage power and non-volatility, the non-volatile memory technology has advanced remarkably. Howe... [more] |
VLD2015-76 DC2015-72 pp.249-253 |
| ICD | 2015-04-16 16:40 |
Nagano | [Panel Discussion]
Advanced semiconductor memories in cloud computing and high-performance computing Koji Nii (Renesas Electronics), Kousuke Miyaji (Shinshu Univ.), Ryousei Takano (AIST), Kensei Takagi, Toru Miwa (SanDisk) ICD2015-7 |
(To be available after the conference date) [more] | ICD2015-7 p.31 |
|
| CPSY, IPSJ-EMB, IPSJ-SLDM, DC [detail] | 2015-03-07 09:20 |
Kagoshima | A Study on a Power Efficient Neurochip with Non-Volatile Memory Jun Tomii, Masaaki Kondo, Hiroshi Nakamura (Univ. Tokyo) CPSY2014-176 DC2014-102 |
Along with the evolution of machine learning techniques, neurochips, which are designed for fast neural network processi... [more] | CPSY2014-176 DC2014-102 pp.83-88 |
|
| VLD | 2015-03-03 16:15 |
Okinawa | Okinawa Seinen Kaikan | [Memorial Lecture]
A Bit-Write Reduction Method based on Error-Correcting Codes for Non-Volatile Memories Masashi Tawada, Shinji Kimura, Masao Yanagisawa, Nozomu Togawa (Waseda Univ.) VLD2014-173 |
Non-volatile memory is superior to SRAM in terms of its high density and low leakage power but it consumes larger writ... [more] |
VLD2014-173 p.115 |
| ICD, CPSY | 2014-12-01 15:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Poster Presentation]
A transparent on-chip instruction cache for reducing power and energy consumption of NV microcontrollers Dahoo Kim, Itaru Hida, Tetsuya Asai, Masato Motomura (Hokkaido Univ) ICD2014-82 CPSY2014-94 |
Demands for low energy microcontrollers which are used in sensor nodes have been increasing in recent years. Also most m... [more] | ICD2014-82 CPSY2014-94 p.43 |
| VLD, DC, IPSJ-SLDM, CPSY, RECONF, ICD, CPM (Joint) [detail] |
2014-11-28 09:15 |
Oita | B-ConPlaza | Energy evaluation of bit-write reduction method based on state encoding limiting maximum and minimum Hamming distances for non-volatile memories Tatsuro Kojo, Masashi Tawada, Masao Yanagisawa, Nozomu Togawa (Waseda Univ.) VLD2014-105 DC2014-59 |
Data stored in non-volatile memories may be destructed due to crosstalk and radiation but we can restore their data by u... [more] | VLD2014-105 DC2014-59 pp.221-226 |
| VLD, DC, IPSJ-SLDM, CPSY, RECONF, ICD, CPM (Joint) [detail] |
2014-11-28 09:40 |
Oita | B-ConPlaza | Small-Sized Encoder/Decoder Circuit Design for Bit-Write Reduction Targeting Non-Volatile Memories Masashi Tawada, Shinji Kimura, Masao Yanagisawa, Nozomu Togawa (Waseda Univ.) VLD2014-106 DC2014-60 |
Non-volatile memory has many advantages such as low leakage power and non-volatility. However, there are problems that ... [more] |
VLD2014-106 DC2014-60 pp.227-232 |
| CAS, SIP, MSS, VLD, SIS [detail] | 2014-07-11 13:40 |
Hokkaido | Hokkaido University | Write Reduction of Internal Registers for Non-volatile RISC Processors Tomoya Goto, Masao Yanagisawa, Shinji Kimura (Waseda Univ.) CAS2014-40 VLD2014-49 SIP2014-61 MSS2014-40 SIS2014-40 |
Recently next-generation non-volatile memories based on MTJ (Magnetic Tunnel Junction) have been paid attention because ... [more] | CAS2014-40 VLD2014-49 SIP2014-61 MSS2014-40 SIS2014-40 pp.213-218 |
| ICD | 2014-01-29 13:00 |
Kyoto | Kyoto Univ. Tokeidai Kinenkan | [Invited Talk]
Next-Generation Solid-State-Drive Design with Semiconductor Non-Volatile Memories Koh Johguchi (Chuo Univ.) ICD2013-135 |
Thanks to the recent fabrication technology development, the bit cost of NAND flash memories has been reduced. Thus, sol... [more] | ICD2013-135 p.83 |
| SIP, CAS, MSS, VLD | 2013-07-12 09:00 |
Kumamoto | Kumamoto Univ. | Evaluation of energy consumption for two-level cache using Non-Volatile Memory for IL1 and UL2 caches Shota Matsuno, Masashi Tawada, Masao Yanagisawa, Shinji Kimura, Nozomu Togawa (Waseda Univ.), Tadahiko Sugibayashi (NEC) CAS2013-17 VLD2013-27 SIP2013-47 MSS2013-17 |
A non-volatile memory has advantages such as low leak energy and non-volatility compared with SRAM or DRAM has high leak... [more] | CAS2013-17 VLD2013-27 SIP2013-47 MSS2013-17 pp.89-94 |
| IT, ISEC, WBS | 2012-03-01 16:10 |
Kanagawa | Construction of multiple error correcting WOM-Code Hidetoshi Utsunomiya, Hiroshi Kamabe (Gifu Univ.) IT2011-61 ISEC2011-88 WBS2011-62 |
Memory devices on which data can be written only once are called write once memories (WOM). A WOM code is a code which... [more] |
IT2011-61 ISEC2011-88 WBS2011-62 pp.95-100 |
|
| ICD, IPSJ-ARC | 2012-01-19 16:20 |
Tokyo | [Panel Discussion]
Challenges and Opportunities for Normally-Off Computing Hiroshi Nakamura (Univ. of Tokyo) ICD2011-138 |
Computer systems are utilized almost everywhere in the world and further contribution of these systems to our society is... [more] | ICD2011-138 p.35 |
|
| ED, SDM | 2010-07-02 15:50 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | Theoretical Study of the Hydrogen Effect on the Program/Erase Cycle of MONOS-Type Memories Akira Otake, Keita Yamaguchi, Kenji Shiraishi (Univ. of Tsukuba.) ED2010-100 SDM2010-101 |
Due to the aggressive scaling of non-volatile memories, “charge-trap memories” such as MONOS type memories are inevitabl... [more] | ED2010-100 SDM2010-101 pp.221-224 |
| ED, SDM | 2010-02-22 15:15 |
Okinawa | Okinawaken-Seinen-Kaikan | Formation of Si Nanocrystals in SiOx Films Induced by Thermal Plasma Jet Millisecond Annealing and Its Application to Floating Gate Memory Tatsuya Okada (Univ. of the Ryukyus), Seiichiro Higashi, Katsunori Makihara, Yasuo Hiroshige, Seiichi Miyazaki (Hiroshima Univ.) ED2009-201 SDM2009-198 |
We investigated formation of Si nanocrystals in SiOx (1.0 < x < 1.9) films induced by millisecond annealing using therma... [more] | ED2009-201 SDM2009-198 pp.29-33 |
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