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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED | 2023-12-08 09:50 |
Aichi | WINC AICHI | Protection Methods of Graphene-Oxide-Semiconductor Electron Emission Sources against Oxidizing Environments and Their Effects on Electron Emission Properties Ren Mutsukawa, Yoshinori Takao (YNU), Masayoshi Nagao, Hiromasa Murata, Katsuhisa Murakami (AIST)  ED2023-48 |
Graphene-oxide-semiconductor (GOS) electron emission devices can emit electrons at low voltages, which are expected to b... [more] | ED2023-48 pp.39-42 |
| LQE, ED, CPM | 2023-11-30 16:20 |
Shizuoka | Design and fabrication of InGaN-based broadband light-emitting structures toward flexible electrical spectral modulation Haruyoshi Miyawaki, Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2023-21 CPM2023-63 LQE2023-61 |
InGaN-based three-dimensional structures can realize multiwavelength-emitting structures without phosphors. Recently, we... [more] | ED2023-21 CPM2023-63 LQE2023-61 pp.36-39 |
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| LQE, ED, CPM | 2023-11-30 16:45 |
Shizuoka | Approaches toward broadband emission from semipolar InGaN quantum wells on GaN microlens structures Shogo Fukushige, Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2023-22 CPM2023-64 LQE2023-62 |
InGaN quantum wells (QWs) on three-dimensional (3D) structures provide multiwavelength emission without phosphors. Recen... [more] | ED2023-22 CPM2023-64 LQE2023-62 pp.40-43 |
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| SDM | 2023-10-13 14:30 |
Miyagi | Niche, Tohoku Univ. | [Invited Talk]
Determination of charge centroid location and energy depth of charge carriers trapped in silicon nitride charge-trap layers Kiyoteru Kobayashi (Tokai Univ.) SDM2023-56 |
Metal-oxide-nitride-oxide-semiconductor (MONOS) field-effect transistors have been employed for memory cells in three-di... [more] | SDM2023-56 pp.13-20 |
| LQE, OPE, CPM, EMD, R | 2023-08-24 15:50 |
Miyagi | Tohoku university (Primary: On-site, Secondary: Online) |
[Invited Talk]
Growth and applications of nitride semiconductors on h-BN Yasuyuki Kobayashi (Hirosaki Univ.), Masanobu Hiroki, Kazuhide Kumakura (NTT Basic Research Lab.) R2023-24 EMD2023-19 CPM2023-29 OPE2023-68 LQE2023-15 |
We have successfully demonstrated that nitride semiconductors were grown on 3-nm-thick hexagonal boron nitride (h-BN) la... [more] | R2023-24 EMD2023-19 CPM2023-29 OPE2023-68 LQE2023-15 pp.42-44 |
| CPM, ED, SDM | 2023-05-19 16:30 |
Aichi | Nagoya Institute of Technology (Primary: On-site, Secondary: Online) |
Low-damage photo-electrochemical etching and electrochemical characterization of p-GaN layers grown on n-GaN substrates Umi Takatsu, Kouta Kubo, Taketomo Sato (Hokkaido Univ.) ED2023-7 CPM2023-7 SDM2023-24 |
The effect of photoelectrochemical (PEC) etching on intentionally damaged p-GaN surfaces was investigated. The electroch... [more] | ED2023-7 CPM2023-7 SDM2023-24 pp.28-31 |
| CPM, ED, LQE | 2022-11-25 13:00 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
LED device operation of InGaN-based multiwavelength emission structures fabricated by a thermal reflow method Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2022-43 CPM2022-68 LQE2022-76 |
Multiwavelength light emitters composed of InGaN-based microstructures without phosphors impact various fields such as s... [more] | ED2022-43 CPM2022-68 LQE2022-76 pp.85-88 |
| CCS | 2022-11-17 16:50 |
Mie | (Primary: On-site, Secondary: Online) |
Heuristic Algorithm-based Design Method of Power Converters including Optimization of Resonant Inductors Wenqi Zhu, Yutaro Komiyama (Chiba Univ.), Xiuqin Wei (ChibaTech), Kien Nguyen, Hiroo Sekiya (Chiba Univ.) CCS2022-51 |
In recent years, the invention of wide bandgap semiconductor devices has made it possible to push the switching frequenc... [more] | CCS2022-51 pp.42-46 |
| ED | 2021-12-09 14:45 |
Online | Online | Oxidation resistant coating of graphene-oxide-semiconductor electron emission device for low earth orbit applications Naoyuki Matsumoto (YNU/AIST), Yoshinori Takao (YNU), Masayoshi Nagao, Katsuhisa Murakami (AIST) ED2021-45 |
A graphene-oxide-semiconductor (GOS) planar-type electron source was protected with a hexagonal boron nitride (h-BN) fil... [more] | ED2021-45 pp.38-42 |
| ED, CPM, LQE | 2021-11-26 16:25 |
Online | Online | Fabrication of Recessed-gate AlGaInN/AlGaN HFETs utilizing a photo-electrochemical (PEC) etching. Kosaku Ito, Yuto Komatsu, Masachika Toguchi (Hokkaido Univ.), Akiyoshi Inoue, Sakura Tanaka, Makoto Miyoshi (Nagoya Inst. of Tech), Taketomo Sato (Hokkaido Univ.) ED2021-35 CPM2021-69 LQE2021-47 |
We utilized photo-electrochemical (PEC) etching for fabrication of recessed-gate AlGaInN/AlGaN MIS HFETs. The PEC reacti... [more] | ED2021-35 CPM2021-69 LQE2021-47 pp.91-94 |
| LQE, CPM, ED | 2020-11-26 13:30 |
Online | Online | High-breakdown-voltage AlGaN channel HFETs with selective-area regrowth ohmic contacts Akiyoshi Inoue, Hiroki Harada, Mizuki Yamanaka, Takashi Egawa, Makoto Miyoshi (NIT) ED2020-7 CPM2020-28 LQE2020-58 |
Al0.19Ga0.81N-channel metal-insulator-semiconductor (MIS) HFETs employing a quaternary AlGaInN barrier layer and a selec... [more] | ED2020-7 CPM2020-28 LQE2020-58 pp.25-28 |
| LQE, CPM, ED | 2020-11-26 15:30 |
Online | Online | Enhanced Breakdown Voltage in AlGaN/GaN HEMTs by Oxygen Plasma Treatment Shunsuke Kamiya, Takashi Nishitani, Yu Matsuda, Nozomu Takano, Joel T. Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.) ED2020-12 CPM2020-33 LQE2020-63 |
With its high critical electric field as consequence of its wide bandgap, gallium nitride (GaN) is considered a leading ... [more] | ED2020-12 CPM2020-33 LQE2020-63 pp.45-48 |
| LQE, CPM, ED | 2020-11-27 14:10 |
Online | Online | First demonstration of InGaN QW tunable single-mode laser with periodically slotted structure Masahiro Uemukai, Akihiro Higuchi, Tomoyuki Tanikawa, Ryuji Katayama (Osaka Univ.) ED2020-21 CPM2020-42 LQE2020-72 |
Nitride semiconductors such as GaN and AlN have strong optical nonlinearity, and they can be applied to nonlinear optica... [more] | ED2020-21 CPM2020-42 LQE2020-72 pp.79-82 |
| LQE | 2017-12-15 10:35 |
Tokyo | [Encouragement Talk]
Polar-plane-free faceted InGaN microstructures for highly efficient polychromatic emitters Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) LQE2017-86 |
InGaN quantum wells (QWs) grown on three dimensionally (3D) structured GaN are promising for phosphor-free white LEDs. H... [more] | LQE2017-86 pp.5-8 |
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| SDM, ED, CPM | 2017-05-26 10:45 |
Aichi | VBL, Nagoya University | N-polar GaN MIS-HEMTs with Flat Interface Grown by Optimized MOVPE Kiattiwut Prasertsuk, Tomoyuki Tanikawa, Takeshi Kimura, Shigeyuki Kuboya, Tetsuya Suemitsu, Takashi Matsuoka (Tohoku Univ.) ED2017-26 CPM2017-12 SDM2017-20 |
An N-polar GaN high electron mobility transistor (HEMT) has an advantage over a Ga-polar HEMT from viewpoints of a poten... [more] | ED2017-26 CPM2017-12 SDM2017-20 pp.59-64 |
| CPM, LQE, ED | 2016-12-13 10:05 |
Kyoto | Kyoto University | Realization of multi-wavelength emission using polar plane-free InGaN multifacet quantum wells Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2016-70 CPM2016-103 LQE2016-86 |
InGaN quantum wells (QWs) grown on three dimensionally (3D) structured GaN are promising for phosphor-free white LEDs. H... [more] | ED2016-70 CPM2016-103 LQE2016-86 pp.67-70 |
| LQE | 2015-12-18 09:50 |
Tokyo | Electromagnetic-field analysis simulation for the improvement of light extraction efficiency in III-nitride LEDs Satoshi Ozaki, Atsushi A. Yamaguchi (Kanazawa Inst. Tech.), Hiroki Goto, Akira Usui (Furukawa Co., Ltd.) LQE2015-123 |
The efficiency droop phenomenon is a big problem for high-brightness white LEDs. It has been pointed out that the proble... [more] | LQE2015-123 pp.1-4 |
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| ED, LQE, CPM | 2015-11-26 15:30 |
Osaka | Osaka City University Media Center | Analysis of radiative and non-radiative lifetimes in GaN using accurate internal-quantum-efficiency values estimated by simultaneous photoluminescence and photo-acoustic measurements Kohei Kawakami, Takashi Nakano, Atsushi A Yamaguchi (KIT) ED2015-77 CPM2015-112 LQE2015-109 |
Radiative and non-radiative recombination lifetimes in III-nitride semiconductors are usually estimated from time-resolv... [more] | ED2015-77 CPM2015-112 LQE2015-109 pp.49-52 |
| ED | 2014-12-23 10:30 |
Miyagi | [Invited Talk]
Realization of GaN-based Terahertz Quantum Cascade Lasers using Pure Three-Level Laser Structure Wataru Terashima, Hideki Hirayama (RIKEN) ED2014-110 |
III-Nitride semiconductors having huge longitudinal optical phonon energies are promising as materials to solve a proble... [more] | ED2014-110 pp.69-74 |
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| LQE, ED, CPM | 2014-11-27 11:00 |
Osaka | Crystal growth of GaN-based nitride semiconductors on lattice-matched ScAlMgO4 Takuya Ozaki, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2014-74 CPM2014-131 LQE2014-102 |
Metalorganic vapor phase epitaxy (MOVPE) of GaN-based materials on ScAlMgO4 (SCAM) substrates is demonstrated. SCAM has ... [more] | ED2014-74 CPM2014-131 LQE2014-102 pp.5-8 |
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