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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 26  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, OPE, CPM, EMD, R 2019-08-22
13:30
Miyagi   [Invited Talk] Progress of InP-based Monolithically Integrated Photonic Devices and Future Prospect Towards Beyond Tbps Era
Hideki Yagi (SEI) R2019-20 EMD2019-18 CPM2019-19 OPE2019-47 LQE2019-25
InP-based photonic devices have yielded the monolithic integration of
various functionalities in addition to miniaturi... [more]
R2019-20 EMD2019-18 CPM2019-19 OPE2019-47 LQE2019-25
pp.5-9
LQE 2018-07-12
15:45
Hokkaido   [Invited Talk] What will be a compelling technology for beyond-400 Gbps systems; Devices vs. Packaging -- Progress of InP-based Coherent Receivers and Future Prospect of Photonic Integrated Circuits --
Hideki Yagi, Naoko Inoue (SEI), Takuya Okimoto (SEDI), Takehiko Kikuchi (SEI) LQE2018-27
Currently, digital coherent transmission using spectrally-efficient modulation formats has been widely applied to not on... [more] LQE2018-27
pp.29-32
LQE 2017-12-15
15:20
Tokyo   [Invited Talk] CSG-DR-LD Technologies for Coherent Applications
Hajime Shoji (Sumitomo Electric) LQE2017-93
Tunable laser technologies based on chirped sampled grating distributed reflector (CSG-DR) are reviewed mainly from a vi... [more] LQE2017-93
pp.37-40
LQE 2016-12-16
14:30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] InP-Based Monolithically Integrated Photonic Devices -- Current Status and Future Prospect --
Hideki Yagi, Toshimitsu Kaneko, Hiroyuki Yoshinaga, Hajime Shoji (SEI) LQE2016-103
InP-based photonic devices have yielded monolithic integration of various functionalities in addition to miniaturization... [more] LQE2016-103
pp.33-36
CPM, LQE, ED 2016-12-13
11:20
Kyoto Kyoto University Development of wafer structure and monolithic integrated GaN-μLED driver circuit for large-scale optoelectonic chip
Kazuaki Tsuchiyama, Shu Utsuhomiya, Shota Nakagawa, Keisuke Yamane, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Tech.) ED2016-73 CPM2016-106 LQE2016-89
A Si/SiO2/GaN-LED structure was fabricated by surface activated bonding method, and a GaN-µLED driver circuit consi... [more] ED2016-73 CPM2016-106 LQE2016-89
pp.79-83
MWP, EMT, PN, LQE, OPE, EST, IEE-EMT [detail] 2014-01-24
13:10
Kyoto Doshisha University Second-harmonic-pumped wavelength conversion in monolithically integrated PPLN waveguides using reflection-type MMI
Takushi Kazama, Takeshi Umeki, Masaki Asobe, Hirokazu Takenouchi (NTT) PN2013-74 OPE2013-188 LQE2013-174 EST2013-123 MWP2013-94
To obtain a higher gain and lower NF of phase sensitive amplifier (PSA) using periodically-poled lithium niobate (PPLN),... [more] PN2013-74 OPE2013-188 LQE2013-174 EST2013-123 MWP2013-94
pp.263-266
LQE, OCS, OPE 2013-10-24
17:20
Fukuoka   Wavelength-Routed Switching for 25-Gbit/s Optical Packets Using a Parallel-Ring-Resonator Tunable Laser Integrated with an InGaAlAs EAM
Toru Segawa, Wataru Kobayashi, Tatsushi Nakahara, Ryo Takahashi (NTT) OCS2013-62 OPE2013-108 LQE2013-78
The explosive growth of optical communications networks has led to a demand for large-capacity and low-power nodes with ... [more] OCS2013-62 OPE2013-108 LQE2013-78
pp.67-70
OPE, LQE, OCS 2012-10-26
09:25
Miyazaki   An electroabsorption modulator integrated DFB laser for beyond 100G parallel LAN applications
Takeshi Fujisawa, Shigeru Kanazawa, Kiyoto Takahata, Akira Ohki, Yuta Ueda, Wataru Kobayashi, Ryuzo Iga, Hiroaki Sanjoh, Takayuki Yamanaka, Masaki Kohtoku, Hiroyuki Ishii (NTT) OCS2012-60 OPE2012-111 LQE2012-77
In 100GbE, a multi-lane LAN-WDM system, in which four 25-Gbit/s light sources with different waveglengths are used for t... [more] OCS2012-60 OPE2012-111 LQE2012-77
pp.97-101
OCS, LQE, OPE 2011-10-27
15:15
Kochi Kochi University of Technology A monolithically integrated light source for future-generation 100GbE transceiver
Takeshi Fujisawa, Shigeru Kanazawa, Hiroyuki Ishii, Yoshihiro Kawaguchi, Nobuhiro Nunoya, Akira Ohki, Kiyoto Takahata, Ryuzo Iga, Fumiyoshi Kano, Hiromi Oohashi (NTT) OCS2011-68 OPE2011-106 LQE2011-69
We have fabricated a small optical trasnmitter module based on monolithically integrated light source, in which four 25G... [more] OCS2011-68 OPE2011-106 LQE2011-69
pp.77-80
OPE, EMT, LQE, PN, IEE-EMT [detail] 2011-01-27
15:45
Osaka Osaka Univ. Fast Optical Power Stabilization using a Germanium Photodiode and a Silicon Variable Optical Attenuator Integrated on a Silicon Photonic Platform
Koji Yamada, Tai Tsuchizawa, Toshifumi Watanabe, Hiroyuki Shinojima, Hidetaka Nishi, Rai Kou, Sungbong Park (NTT), Yasuhiko Ishikawa, Kazumi Wada (Univ. of Tokyo), Seiichi Itabashi (NTT) PN2010-36 OPE2010-149 LQE2010-134
Fast optical power stabilization is demonstrated using a germanium photodiode and a silicon variable optical attenuator ... [more] PN2010-36 OPE2010-149 LQE2010-134
pp.53-56
OPE 2010-12-17
17:55
Tokyo Kikai-Shinko-Kaikan Bldg. Monolithic Integration of Silicon Variable Optical Attenuators Based on PIN Carrier-Injection Structure and a Silica-Based Arrayed Waveguide Grating Filter
Hidetaka Nishi, Tai Tsuchizawa, Toshifumi Watanabe, Hiroyuki Shinojima, Rai Kou, Sungbong Park, Koji Yamada, Seiichi Itabashi (NTT) OPE2010-142
We demonstrate the monolithic integration of Si--VOAs and a silica-based AWG filter by connecting them with spot-size co... [more] OPE2010-142
pp.61-64
EMD, OPE, LQE, CPM 2010-08-27
09:50
Hokkaido Chitose Arcadia Plaza Monolithically Integrated Wavelength-Routing Switch with Double-Ring-Resonator-Coupled Tunable Lasers
Toru Segawa, Shinji Matsuo, Takaaki Kakitsuka, Yasuo Shibata, Tomonari Sato, Yoshihiro Kawaguchi, Yasuhiro Kondo, Ryo Takahashi (NTT Corp.) EMD2010-45 CPM2010-61 OPE2010-70 LQE2010-43
Future photonic networks will require high-speed optical packet switches, which operate on a packet-by-packet basis whil... [more] EMD2010-45 CPM2010-61 OPE2010-70 LQE2010-43
pp.89-92
EMT, OPE, MW, IEE-EMT [detail] 2010-07-29
14:20
Hokkaido Hokkaido Univ. 75-km SMF transmission of optical 16 QAM signal generated by a monolithic quad-parallel Mach-Zehnder optical modulator
Akito Chiba, Takahide Sakamoto, Tetsuya Kawanishi (NICT), Kaoru Higuma, Masaaki Sudo, Junichiro Ichikawa (Sumitomo Osaka Cement Co., Ltd.) MW2010-45 OPE2010-30
We demonstrate 75-km single mode fiber transmission of 40-Gbit/s optical 16-level quadrature amplitude modulation (16QAM... [more] MW2010-45 OPE2010-30
pp.41-44
CPM, OPE, R 2010-04-16
13:50
Tokyo Kikai-Shinko-Kaikan Bldg. 10Gb/s-80km Transmission Characteristics of a Compact Tunable Light Source Monolithically Integrated with Mach-Zehnder Modulator via DC Mirror
Takeshi Okamoto, Kenji Mizutani, Kiyotaka Tsuruoka, Shinya Sudo, Mineto Sato, Koji Kudo, Tomoaki Kato, Kenji Sato (NEC) R2010-3 CPM2010-3 OPE2010-3
Recently, in order to reduce footprint of the transmitters and transponders, small form factor modules (TOSA, etc.) have... [more] R2010-3 CPM2010-3 OPE2010-3
pp.11-15
OPE 2009-12-18
16:40
Tokyo Kikai-Shinko-Kaikan Bldg. Synchronized Operation of a Monolithically-Integrated Si VOA and Ge Photodiode
Sungbong Park, Tai Tsuchizawa, Toshifumi Watanabe, Hiroyuki Shinojima, Hidetaka Nishi, Koji Yamada (NTT), Yasuhiko Ishikawa, Kazumi Wada (Univ. of Tokyo.), Seiichi Itabashi (NTT) OPE2009-169
We have investigated monolithically integrated Ge p-i-n photodiodes and Si variable optical attenuators (VOAs). The Ge p... [more] OPE2009-169
pp.47-52
IA 2009-01-28
15:10
Tokyo Kikai-Shinko-Kaikan Bldg. Wide Dynamic Range Wavelength Converter
Atsushi Sugitatsu, Toshiharu Miyahara, Nobuo Ohata, Eitaro Ishimura, Takeshi Saito, Takeshi Yamatoya, Toshitaka Aoyagi (Mitsubishi/OITDA), Yasuhiko Arakawa (Univ. of Tokyo) IA2008-55
We develop the wide dynamic range wavelength converter, which is a part of the project "Development of Next-generation H... [more] IA2008-55
pp.45-47
LQE 2008-12-12
13:20
Tokyo Kikai-Shinko-Kaikan Bldg. [Encouragement Talk] Recent Advancements for the Semiconductor Double-ring-resonator-coupled Laser
Toru Segawa, Shinji Matsuo, Takaaki Kakitsuka, Tomonari Sato, Yasuhiro Kondo, Hiroyuki Suzuki, Ryo Takahashi (NTT Co.) LQE2008-134
Future photonic networks will require high-speed optical packet switches, which operate on a packet-by-packet basis whil... [more] LQE2008-134
pp.31-36
LQE, ED, CPM 2008-11-27
10:20
Aichi Nagoya Institute of Technology A Proposal of InGaN-Based Multiple-Colored Light Emitting Devices Using Selective Area Metal-Organic Vapor Phase Epitaxy
Tomonari Shioda, Yuki Tomita, Masakazu Sugiyama, Yukihiro Shimogaki, Yoshiaki Nakano (The Univ. of Tokyo) ED2008-154 CPM2008-103 LQE2008-98
Selective area metal-organic vapor phase epitaxy (SA-MOVPE) allows in-plane control of layer composition and thickness. ... [more] ED2008-154 CPM2008-103 LQE2008-98
pp.13-16
OCS, LQE, OPE 2008-10-23
09:00
Fukuoka Kyushu Univ. 10-Gbit/s InP n-p-i-n Mach-Zehnder Modulator Monolithically Integrated with SOA
Takako Yasui, Yasuo Shibata, Ken Tsuzuki, Nobuhiro Kikuchi, Masakazu Arai, Yoshihiro Kawaguchi (NTT), Hiroshi Yasaka (Tohoku Univ.) OCS2008-47 OPE2008-90 LQE2008-59
An InP n-p-i-n Mach-Zehnder modulator and a semiconductor optical amplifier were monolithically integrated to compensate... [more] OCS2008-47 OPE2008-90 LQE2008-59
pp.1-6
LQE, CPM, EMD, OPE 2008-08-29
09:25
Miyagi Touhoku Univ. A Compact Widely Wavelength-Tunable Laser Diode Monolithically Integrated with a Ring/MZI Loop-Filter
Takeshi Okamoto, Shinya Sudo, Kiyotaka Tsuruoka, Mads L. Nielsen, Kenji Mizutani, Kenji Sato, Koji Kudo (NEC) EMD2008-46 CPM2008-61 OPE2008-76 LQE2008-45
Widely wavelength-tunable lasers with low power consumption and low cost are indispensable for dense wavelength division... [more] EMD2008-46 CPM2008-61 OPE2008-76 LQE2008-45
pp.75-78
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