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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE 2017-12-15
10:35		 Tokyo   [Encouragement Talk] Polar-plane-free faceted InGaN microstructures for highly efficient polychromatic emitters
Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) LQE2017-86		 InGaN quantum wells (QWs) grown on three dimensionally (3D) structured GaN are promising for phosphor-free white LEDs. H... [more] LQE2017-86
pp.5-8
SDM, ED, CPM 2017-05-26
10:45		 Aichi VBL, Nagoya University N-polar GaN MIS-HEMTs with Flat Interface Grown by Optimized MOVPE
Kiattiwut Prasertsuk, Tomoyuki Tanikawa, Takeshi Kimura, Shigeyuki Kuboya, Tetsuya Suemitsu, Takashi Matsuoka (Tohoku Univ.) ED2017-26 CPM2017-12 SDM2017-20		 An N-polar GaN high electron mobility transistor (HEMT) has an advantage over a Ga-polar HEMT from viewpoints of a poten... [more] ED2017-26 CPM2017-12 SDM2017-20
pp.59-64
LQE, ED, CPM 2014-11-27
11:00		 Osaka   Crystal growth of GaN-based nitride semiconductors on lattice-matched ScAlMgO4
Takuya Ozaki, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2014-74 CPM2014-131 LQE2014-102		 Metalorganic vapor phase epitaxy (MOVPE) of GaN-based materials on ScAlMgO4 (SCAM) substrates is demonstrated. SCAM has ... [more] ED2014-74 CPM2014-131 LQE2014-102
pp.5-8
ED, SDM, CPM 2012-05-17
14:55		 Aichi VBL, Toyohashi Univ. of Technol. Growth-rate dependence of GaP structure grown Si substrates using metalorganic vapor phase epitaxy
Tatsuya Takagi, Shunshin Ka, Ryo Miyahara, Yasushi Takano (Shizuoka Univ.) ED2012-21 CPM2012-5 SDM2012-23		 GaP layers were grown on 2° and 4° misoriented Si substrates using metalorganic vapor phase epitaxy. GaP was deposited a... [more] ED2012-21 CPM2012-5 SDM2012-23
pp.19-23
 Results 1 - 4 of 4  /   
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