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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, MW 2008-01-17
11:10		 Tokyo Kikai-Shinko-Kaikan Bldg. Improvement in reliability of InGaP/GaAs HBT's by ledge passivation
Fu-Ying Yang, Shinji Nozaki, Kazuo Uchida, Atsushi Koizumi (UEC) ED2007-217 MW2007-148		 Because of the exposed heavily carbor-doped GaAs base in the InGaP/GaAs HBT’s, the current gain is significantly reduced... [more] ED2007-217 MW2007-148
pp.61-66
ED, SDM 2007-06-25
13:00		 Overseas Commodore Hotel Gyeongju Chosun, Gyeongju, Korea [Invited Talk] High-performance and reliable InP/InGaAs HBTs operating at high current density
Shoji Yamahata, Norihide Kashio, Kenji Kurishima, Yoshino K. Fukai (NTT), Yasuyuki Miyamoto (TOKYO TECH) 		This paper describes the high-performance and reliability of scaled InP/InGaAs HBTs with a passivation ledge structure a... [more]
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