Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
CPM, LQE, ED |
2016-12-12 13:00 |
Kyoto |
Kyoto University |
Current-voltage characteristics of Ni/Au Schottky diodes fabricated on InAlN/AlN/GaN heterostructures grown on GaN substrates Junji Kotani, Atsushi Yamada, Tetsuro Ishiguro, Norikazu Nakamura (Fujitsu Lab.) ED2016-57 CPM2016-90 LQE2016-73 |
This paper investigate the effects of threading dislocation density on the leakage characteristics of Ni/Au Schottky dio... [more] |
ED2016-57 CPM2016-90 LQE2016-73 pp.1-4 |
VLD, CPSY, RECONF, IPSJ-SLDM, IPSJ-ARC [detail] |
2016-01-21 10:55 |
Kanagawa |
Hiyoshi Campus, Keio University |
Power Reduction of TLB using Body Bias Control on SOTB Daiki Kawase, Hayate Okuhara, Hideharu Amano (Keio Univ.) VLD2015-102 CPSY2015-134 RECONF2015-84 |
SOTB(Silicon on thin buried oxide) MOSFET is one of the FD-SOI device with 10nm BOX layer. SOTB
effectively reduces the... [more] |
VLD2015-102 CPSY2015-134 RECONF2015-84 pp.191-196 |
ED, LQE, CPM |
2015-11-27 11:40 |
Osaka |
Osaka City University Media Center |
Dependence of the initial AlN layer of the vertical direction leakage current of the AlGaN/GaN HEMT structure on Silicon substrate Yuya Yamaoka (TNSC), Kazuhiro Ito (NITech), Akinori Ubukata, Toshiya Tabuchi, Koh Matsumoto (TNSC), Takashi Egawa (NITech) ED2015-83 CPM2015-118 LQE2015-115 |
In this study, two types of single AlN on Si substrates were grown using different growth conditions. A scanning electro... [more] |
ED2015-83 CPM2015-118 LQE2015-115 pp.77-80 |
WPT |
2014-06-06 16:45 |
Tokyo |
Univ. of Tokyo |
Electromagnetic Field Suppression in Polyphase Wireless Power Transfer via Magnetic Resonance Coupling Hiroki Narita, Takehiro Imura, Hiroshi Fujimoto, Yoichi Hori (Univ. of Tokyo) WPT2014-31 |
It is expected that Wireless Power Transfer (WPT) can be a power feeding method where wiring is difficult.
The power tr... [more] |
WPT2014-31 pp.39-44 |
RECONF |
2013-09-19 09:00 |
Ishikawa |
Japan Advanced Institute of Science and Technology |
A Low power Reconfigurable Accelerator using a Back-gate Bias Control Technique Hongliang Su, Weihan Wang, Hideharu Amano (Keio Univ.) RECONF2013-26 |
Leakage power is a serious problem especially for accerelators which use a large size Processing Ele- ment (PE) array. H... [more] |
RECONF2013-26 pp.37-42 |
ICD |
2013-04-12 15:30 |
Ibaraki |
Advanced Industrial Science and Technology (AIST) |
[Invited Lecture]
Reduction of SRAM Standby Leakage utlizing All Digital Current Comparator Noriaki Maeda, Shigenobu Komatsu, Masao Morimoto, Koji Tanaka, Yasumasa Tsukamoto, Koji Nii, Yasuhisa Shimazaki (Renesas Electronics) ICD2013-21 |
A high-performance and low-leakage current embedded SRAM for mobile phones is proposed. The proposed SRAM has two low-vo... [more] |
ICD2013-21 pp.109-114 |
CPSY, VLD, RECONF, IPSJ-SLDM [detail] |
2013-01-16 16:00 |
Kanagawa |
|
Break Even Time Evaluation of Run-Time Power Gating Control by On-chip Leakage Monitor Kensaku Matsunaga, Masaru Kudo (SIT), Yuya Ohta, Nao Konishi (SIT), Hideharu Amano (KU), Ryuichi Sakamoto, Mitaro Namiki (TUAT), Kimiyoshi Usami (SIT) VLD2012-118 CPSY2012-67 RECONF2012-72 |
Run-time Power Gating (RTPG) reduces leakage energy by turning off a power switch(PS) for idle periods of a circuit duri... [more] |
VLD2012-118 CPSY2012-67 RECONF2012-72 pp.63-68 |
EMCJ, ITE-BCT |
2010-03-12 14:55 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
The Evaluation of the Antenna Measurement Accuracy Using Ferrite Cores and Baluns for Small Antennas Yasuo Morimoto, Tadahiko Maeda (Ritsumeikan Univ.) EMCJ2009-131 |
It has been reported that the leakage current along the external side of the outer conductor of a feeding cable connecte... [more] |
EMCJ2009-131 pp.31-36 |
SDM |
2009-10-29 16:45 |
Miyagi |
Tohoku University |
Current Voltage Characteristics of Si-MESFET on SOI Substrate Toshiyuki Abe, Yuichiro Tanushi, Shin-Ichiro Kuroki, Koji Kotani, Takashi Ito (Tohoku Univ.) SDM2009-122 |
We simulate current-voltage characteristics of scaled Si metal semiconductor field effect transistors (MESFETs) and show... [more] |
SDM2009-122 pp.27-30 |
PN, OPE, EMT, LQE |
2009-01-29 09:20 |
Kyoto |
Kyoto Institute Technology (Matsugasaki Campus) |
Reverse current reduction of Ge pin photodiodes on Si without post-growth annealing Sungbong Park, Shinya Takita, Yasuhiko Ishikawa, Jiro Osaka, Kazumi Wada (Univ. of Tokyo) PN2008-44 OPE2008-147 LQE2008-144 |
[more] |
PN2008-44 OPE2008-147 LQE2008-144 pp.11-15 |
ICD |
2008-12-12 16:35 |
Tokyo |
Tokyo Inst. Tech., Ohokayama Campus, Kokusa-Kouryu-Kaikan |
Post-Silicon Programmed Body-Biasing Platform Suppressing Device Variability in 45 nm CMOS Technology Issei Kashima, Hiroaki Suzuki, Masanori Kurimoto (Renesas Technology Corp), Tadao Yamanaka (Renesas Design), Hidehiro Takata (Renesas Technology Corp), Hiroshi Makino (Osaka Institute of Tech), Hirofumi Shinohara (Renesas Technology Corp) ICD2008-128 |
The Post-Silicon Programmed Body-Biasing Platform is proposed to suppress device variability in the 45-nm CMOS technolog... [more] |
ICD2008-128 pp.137-142 |
VLD, ICD |
2008-03-06 16:35 |
Okinawa |
TiRuRu |
Comparison of Power consumption between dynamic voltage scheme and multi-supply voltage scheme for system LSI Satoshi Hanami, Shigeyoshi Watanabe (Shonan Inst. of Tech.) VLD2007-155 ICD2007-178 |
Reduction of power dissipation caused by dynamic current, gate leakage current, and subthreshold leakage current of mult... [more] |
VLD2007-155 ICD2007-178 pp.67-72 |
RECONF, CPSY, VLD, IPSJ-SLDM |
2008-01-16 10:15 |
Kanagawa |
Hiyoshi Campus, Keio University |
[Invited Talk]
Flex Power FPGA Hanpei Koike (AIST) |
We have investigated Flex Power FPGA, in which fine-grain reconfigurable threshold voltage control enables substantial r... [more] |
VLD2007-105 CPSY2007-48 RECONF2007-51 pp.1-6 |
CPM, ED, LQE |
2007-10-12 09:50 |
Fukui |
Fukui Univ. |
Low leakage current ITO schottky electrode for AlGaN/GaN HEMT Keita Matsuda, Takeshi Kawasaki, Ken Nakata, Takeshi Igarashi, Seiji Yaegashi (Eudyna Devices) ED2007-167 CPM2007-93 LQE2007-68 |
AlGaN/GaN HEMTs are attractive devices for high power switching applications because of their high electron mobility and... [more] |
ED2007-167 CPM2007-93 LQE2007-68 pp.57-61 |
ICD, SDM |
2007-08-23 12:50 |
Hokkaido |
Kitami Institute of Technology |
[Special Invited Talk]
Past and Future of Dynamic Voltage Scaling Hiroyuki Mizuno (Hitachi) SDM2007-148 ICD2007-76 |
Effectiveness and issue for Dynamic Voltage Scaling (DVS) have been described. Both dynamic and leakage power reduction ... [more] |
SDM2007-148 ICD2007-76 pp.41-46 |
ICD, SDM |
2007-08-23 15:25 |
Hokkaido |
Kitami Institute of Technology |
A 1.92us-wake-up time thick-gate-oxide power switch technique for ultra low-power single-chip mobile processors Kazuki Fukuoka, Osamu Ozawa, Ryo Mori, Yasuto Igarashi, Toshio Sasaki, Takashi Kuraishi, Yoshihiko Yasu, Koichiro Ishibashi (Renesas Technology) SDM2007-153 ICD2007-81 |
A technique for controlling rush current and wake-up time of thick-gate-oxide power switches is described. Suppressing t... [more] |
SDM2007-153 ICD2007-81 pp.69-73 |
ICD, SIP, IE, IPSJ-SLDM |
2006-10-27 10:50 |
Miyagi |
|
Design method of low-power dual-supply-voltage system LSI taking into account leakage current of MOSFET Shigeyoshi Watanabe, Masaki Kanai, Akira Nagasawa, Satoshi Hanami, Manabu Kobayashi, Toshinori Takabatake (SIT) |
Reduction of power dissipation caused by dynamic current, gate leakage current, and subthreshold leakage current of dual... [more] |
SIP2006-106 ICD2006-132 IE2006-84 pp.31-36 |
ICD |
2006-04-13 10:45 |
Oita |
Oita University |
[Special Invited Talk]
Sub-1V DRAM Design Takayuki Kawahara (Hitachi Central Research Lab.) |
Issues for sub-1V DRAM operation and its solutions are described. Since the low voltage operation of DRAM is difficult,... [more] |
ICD2006-4 pp.19-24 |
ICD |
2006-04-14 13:00 |
Oita |
Oita University |
[Special Invited Talk]
Low-Power Low-Voltage SRAM Design for Battery Operation Masanao Yamaoka (Hitachi, Ltd.) |
In the processors for mobile devices, the power consumption
of the embedded SRAMs has large impact on the total power c... [more] |
ICD2006-17 pp.91-96 |