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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2021-06-22 13:50 |
Online | Online | [Memorial Lecture]
Operation mechanism of Si/HZO ferroelectric FETs
-- Role of MOS (MFS) interface -- Kasidit Toprasertpong, Tsung-En Lee, Zaoyang Lin, Kento Tahara, Kouhei Watanabe, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo)  SDM2021-23 |
In this talk, we will introduce our findings on the mechanisms at the MFIS interface and their impacts on the memory cha... [more] | SDM2021-23 pp.7-12 |
| SDM | 2018-11-09 10:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Modeling of Electron Transport in 4H-SiC MOS Inversion Layers Hajime Tanaka, Nobuya Mori (Osaka Univ.) SDM2018-71 |
We formulated scattering mechanisms in 4H-SiC MOS interfaces and calculated the electron mobility by a Monte Carlo simul... [more] | SDM2018-71 pp.35-40 |
| SDM | 2018-06-25 15:35 |
Aichi | Nagoya Univ. VBL3F | Modification of Al2O3/SiC interface by oxygen radical irradiation Takuma Doi (Nagoya Univ.), Wakana Takeuchi (AIT), Mitsuo Sakashita (Nagoya Univ.), Noriyuki Taoka (AIST), Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2018-23 |
To realizing power-saving SiC MOSFET, it is needed to reduce the density of interface traps (Dit) between insulator and ... [more] | SDM2018-23 pp.33-36 |
| MW, ED | 2017-01-27 09:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Dependence of Electron Mobility on Deposition Temperature and H2 Annealing in MOSFETs with HfO2/Al2O3/InGaAs Gate Stacks Kazuto Ohsawa, Shinji Noguchi, Seiko Netsu, Nobukazu Kise, Yasuyuki Miyamoto (Tokyo Tech) ED2016-103 MW2016-179 |
III–V compound semiconductors are promising materials for future n-type MOSFET channels because of their high elec... [more] | ED2016-103 MW2016-179 pp.35-40 |
| SDM | 2016-11-11 13:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Detection and Analysis of Single MOS Interface Traps Using the Charge Pumping Method
-- Toward Advanced Atomistic Trap Physics -- Toshiaki Tsuchiya (Shimane Univ.) SDM2016-86 |
We have developed effective procedures to detect and characterize single MOS interface traps by the charge pumping (CP) ... [more] | SDM2016-86 pp.43-47 |
| SDM | 2016-01-28 11:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Understanding of BTI for Tunnel FETs Wataru Mizubayashi, Takahiro Mori, Koichi Fukuda, Yuki Ishikawa, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Yongxun Liu, Shinichi O'uchi, Junichi Tsukada, Hiromi Yamauchi, Takashi Matsukawa, Meishoku Masahara, Kazuhiko Endo (AIST) SDM2015-122 |
(To be available after the conference date) [more] | SDM2015-122 pp.9-12 |
| CPM | 2015-08-11 11:20 |
Aomori | Evaluation of interface and near-interface traps in Al-germanate/Ge structure fabricated by Radical-Enhanced ALD Hidefumi Narita (Hirosaki Univ.), Daichi Yamada, Yukio Fukuda (Tokyo Univ. of Science, Suwa), Yosuke Kanuka, Hiroshi Okamoto (Hirosaki Univ.) CPM2015-44 |
A Ge-MIS structure has attracted the attention for the candidate of a next generation device. However, improvement of th... [more] | CPM2015-44 pp.67-70 |
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| SDM | 2013-06-18 15:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
High performance of SiC-MOS devices by POCl3 annealing Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki (NAIST) SDM2013-58 |
Effects of phosphorus incorporation by POCl3 annealing on electrical properties of 4H-SiC MOS devices were investigated.... [more] | SDM2013-58 pp.71-76 |
| SDM | 2011-07-04 10:00 |
Aichi | VBL, Nagoya Univ. | Defect analysis of HfO2/In0.53Ga0.47As interface using capacitance-voltage and conductance methods Darius Zade, Ryuji Hosoi, Ahmet Parhat, Kuniyuki Kakushima, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Inst. of Tech.) SDM2011-53 |
The changes in electrical characteristics of W/HfO2or La2O3/ In0.53Ga0.47As capacitors by wet chemical treatment before ... [more] | SDM2011-53 pp.17-22 |
| SDM | 2011-07-04 11:40 |
Aichi | VBL, Nagoya Univ. | Evaluation of Light Induced Damages in Plasma Process on Electrical Properties of Al2O3/Ge Gate Stack Structure Kusuman Dari, Wakana Takeuchi, Kimihiko Kato, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2011-57 |
We have investigated the effect of light induced damages on the electrical properties of the Al2O3/Ge gate stack structu... [more] | SDM2011-57 pp.41-46 |
| OME | 2010-01-12 16:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Analysis of Trap-State Density at Pentacene/Gate Insulator Interface Using In-Situ Field-Effect Thermally-Stimulated-Current Method Takahiro Fujii (Chiba Univ.), Hiroyuki Matsui (AIST), Tatsuo Hasegawa (AIST/Univ. of Tokyo), Shigekazu Kuniyoshi, Masatoshi Sakai, Kazuhiro Kudo, Masakazu Nakamura (Chiba Univ.) OME2009-76 |
Trap states at organic/gate insulator interfaces in organic thin-film transistors (OTFTs) greatly influence on the chara... [more] | OME2009-76 pp.51-56 |
| SDM | 2009-12-04 15:50 |
Nara | NAIST | Formation of High Quality SiO2 and SiO2/Si Interface using Thermal Plasma Jet Induced Millisecond Annealing and Post-Metallization Annealing Yasuo Hiroshige, Seiichiro Higashi, Yusuke Miyazaki, Kazuya Matsumoto, Seiichi Miyazaki (Hiroshima Univ.) SDM2009-166 |
Thermal plasma jet (TPJ) induced millisecond annealing has been performed to SiO2 films deposited at 300C by remote plas... [more] | SDM2009-166 pp.79-82 |
| SDM | 2009-11-12 14:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Surface-Potential-Based Drain Current Model for Thin-Film Transistors Hiroshi Tsuji (Osaka Univ/JST), Yoshinari Kamakura, Kenji Taniguchi (Osaka Univ.) SDM2009-138 |
A new surface-potential-based drain current model for polycrystalline silicon thin-film transistors (poly-Si TFTs) is pr... [more] | SDM2009-138 pp.19-22 |
| SDM | 2008-12-05 16:10 |
Kyoto | Kyoto University, Katsura Campus, A1-001 | Electrical characterization of HfO2/Ge MIS structure treated by fluorine gas Hideto Imajo, Hyun Lee, Yuichi Yoshioka, Takeshi Kanashima, Masanori Okuyama (Osaka Univ.) SDM2008-195 |
High-k/Ge MIS is expected as gate structure of the next-generation FET which has high mobility. However, electrical perf... [more] | SDM2008-195 pp.59-64 |
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